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MPSH81_D27Z Equivalent & Substitute Parts
Part Overview
The MPSH81_D27Z is an RF transistor manufactured by onsemi, classified as a PNP bipolar junction transistor (BJT) in a through-hole TO-92-3 package. This component is designed for RF applications with a transition frequency of 600MHz and a maximum collector current of 50mA. The part is currently listed as obsolete, necessitating identification of equivalent or substitute components for ongoing design requirements or production needs.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Manufacturer Part Number | MPSH81_D27Z |
| Manufacturer | onsemi |
| Category | Transistors, Bipolar (BJT) |
| Transistor Type | PNP |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| Frequency - Transition | 600MHz |
| Power - Max | 350mW |
| Current - Collector (Ic) (Max) | 50mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-92-3 |
| Product Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Substitute Part Grouping Explanation
Substitution of the MPSH81_D27Z requires evaluation based on the following critical parameters:
Transistor Type: The substitute must be a PNP transistor to maintain circuit polarity and biasing requirements.
Voltage Rating: The substitute must support a collector-emitter breakdown voltage equal to or greater than 20V to ensure safe operation within the original design envelope.
Frequency Performance: The substitute must support RF operation at or above 600MHz transition frequency to maintain signal integrity in RF applications.
Current Handling: The substitute must support a maximum collector current equal to or greater than 50mA to handle the design current requirements.
Power Dissipation: The substitute must support power dissipation equal to or greater than 350mW to prevent thermal stress.
Operating Temperature Range: The substitute must support the full operating temperature range of -55°C to 150°C (TJ).
Mounting Type: Substitutes may differ in mounting type (through-hole versus surface mount) depending on circuit board design requirements and assembly capabilities.
The HFA3135IHZ96 is listed as a substitute part; however, critical parameter differences exist that must be evaluated against specific application requirements.
Parameter Comparison
| Parameter | MPSH81_D27Z | HFA3135IHZ96 |
|---|---|---|
| Manufacturer | onsemi | Renesas Electronics Corporation |
| Transistor Type | PNP | 2 PNP (Dual) |
| Voltage - Collector Emitter Breakdown (Max) | 20V | 9V |
| Frequency - Transition | 600MHz | 7GHz |
| Current - Collector (Ic) (Max) | 50mA | 26mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V | 15 @ 10mA, 2V |
| Operating Temperature (Max) | 150°C (TJ) | 150°C (TJ) |
| Mounting Type | Through Hole | Surface Mount |
| Package / Case | TO-92-3 | SOT-23-6 |
| Product Status | Obsolete | Active |
Engineering Selection Recommendations
The MPSH81_D27Z is obsolete and no longer manufactured by onsemi. Active alternatives must be evaluated based on application-specific requirements.
The HFA3135IHZ96 is an active product from Renesas Electronics Corporation and is ROHS3 compliant. However, this substitute exhibits the following parameter deviations from the original part:
Voltage Limitation: The HFA3135IHZ96 has a maximum collector-emitter breakdown voltage of 9V, which is significantly lower than the MPSH81_D27Z specification of 20V. This part is unsuitable for applications requiring the full 20V voltage rating.
Current Limitation: The HFA3135IHZ96 supports a maximum collector current of 26mA, which is below the MPSH81_D27Z specification of 50mA. This part is unsuitable for applications requiring the full 50mA current capacity.
Frequency Advantage: The HFA3135IHZ96 provides a transition frequency of 7GHz, which exceeds the MPSH81_D27Z specification of 600MHz. This provides additional frequency margin for RF applications.
Packaging Difference: The HFA3135IHZ96 is a dual PNP transistor in a surface-mount SOT-23-6 package, whereas the MPSH81_D27Z is a single transistor in a through-hole TO-92-3 package. Circuit board redesign is required for substitution.
Gain Difference: The HFA3135IHZ96 has a lower DC current gain (hFE) of 15 compared to the MPSH81_D27Z specification of 60, requiring circuit biasing adjustments.
Selection of the HFA3135IHZ96 is appropriate only for applications where the voltage and current requirements are within the HFA3135IHZ96 specifications and where surface-mount assembly is feasible.
Frequently Asked Questions (FAQ)
Q: Can the HFA3135IHZ96 directly replace the MPSH81_D27Z in all applications?
A: No. The HFA3135IHZ96 has lower voltage (9V vs. 20V) and current (26mA vs. 50mA) ratings. Direct substitution is only possible in applications where operating voltages do not exceed 9V and collector currents do not exceed 26mA.
Q: What is the primary reason the MPSH81_D27Z requires a substitute?
A: The MPSH81_D27Z is obsolete and no longer manufactured by onsemi. Substitute parts must be identified for new production or design continuation.
Q: Does the HFA3135IHZ96 require circuit board redesign?
A: Yes. The HFA3135IHZ96 is a surface-mount component in a SOT-23-6 package, whereas the MPSH81_D27Z is a through-hole component in a TO-92-3 package. Circuit board layout and assembly process changes are required.
Q: Are there compliance differences between the MPSH81_D27Z and HFA3135IHZ96?
A: The MPSH81_D27Z has MSL 1 (Unlimited) moisture sensitivity. The HFA3135IHZ96 has MSL 2 (1 Year) moisture sensitivity, requiring stricter storage and handling protocols. Both parts are REACH Unaffected and have EAR99 ECCN classification. The HFA3135IHZ96 is ROHS3 compliant.
Q: What are the key electrical differences that affect circuit design?
A: The HFA3135IHZ96 has lower DC current gain (hFE of 15 vs. 60), requiring different biasing resistor values. The lower voltage and current ratings necessitate circuit analysis to confirm compatibility with the original design specifications.
Q: Is the HFA3135IHZ96 a dual transistor configuration?
A: Yes. The HFA3135IHZ96 contains two PNP transistors in a single SOT-23-6 package. Only one transistor may be used if a single-transistor solution is required, leaving the second transistor unused.
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