MPSH17_D75Z RF Transistor NPN Equivalent & Substitute Parts

Part Overview

The MPSH17_D75Z is an RF transistor NPN manufactured by onsemi, designed for radio frequency applications operating at 800MHz with a maximum collector-emitter breakdown voltage of 15V and power dissipation of 350mW. This device is packaged in a through-hole TO-92-3 configuration and is classified as obsolete. Due to its obsolete status, equivalent substitute parts are necessary for new designs, production continuity, and system upgrades. The substitute parts listed maintain NPN transistor functionality while offering enhanced frequency performance, improved noise characteristics, and active product status from leading RF semiconductor manufacturers.

Substiute Parts

MPSH17_D75Z
onsemiIn Stock: 1089MPSH17_D75Z Datasheet
MPSH17_D75Z
Current Part
BFP420FH6327XTSA1
Infineon TechnologiesIn Stock: 4302BFP420FH6327XTSA1 Datasheet
BFP420FH6327XTSA1
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BFP620FH7764XTSA1
Infineon TechnologiesIn Stock: 5428BFP620FH7764XTSA1 Datasheet
BFP620FH7764XTSA1
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BFP720ESDH6327XTSA1
Infineon TechnologiesIn Stock: 4304BFP720ESDH6327XTSA1 Datasheet
BFP720ESDH6327XTSA1
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MMBTH10-7-F
Diodes IncorporatedIn Stock: 10612MMBTH10-7-F Datasheet
MMBTH10-7-F
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Key Parameters

Parameter MPSH17_D75Z
Manufacturer onsemi
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 15V
Frequency - Transition 800MHz
Noise Figure (dB Typ @ f) 6dB @ 200MHz
Gain 24dB
Power - Max 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 5mA, 10V
Mounting Type Through Hole
Package / Case TO-92-3
Product Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the MPSH17_D75Z is determined by the following critical parameters: transistor type (NPN), collector-emitter breakdown voltage rating, frequency-transition capability, power dissipation capacity, and DC current gain characteristics. The substitute parts listed are grouped based on their ability to perform equivalent RF amplification functions while accommodating design constraints.

The MMBTH10-7-F from Diodes Incorporated provides the closest voltage rating match (25V) and maintains similar frequency operation (650MHz), making it suitable for applications where through-hole to surface-mount conversion is acceptable. The Infineon BFP420FH6327XTSA1, BFP620FH7764XTSA1, and BFP720ESDH6327XTSA1 represent advanced RF alternatives with significantly higher frequency capabilities (25GHz, 65GHz, and 43GHz respectively), offering superior performance for modern high-frequency RF applications. All substitute parts maintain NPN configuration and are classified as active products with current manufacturing support.

Parameter Comparison

Parameter MPSH17_D75Z BFP420FH6327XTSA1 BFP620FH7764XTSA1 BFP720ESDH6327XTSA1 MMBTH10-7-F
Manufacturer onsemi Infineon Technologies Infineon Technologies Infineon Technologies Diodes Incorporated
Transistor Type NPN NPN NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 15V 5.5V 2.8V 4.7V 25V
Frequency - Transition 800MHz 25GHz 65GHz 43GHz 650MHz
Power - Max 350mW 160mW 185mW 100mW 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 5mA, 10V 60 @ 5mA, 4V 110 @ 50mA, 1.5V 160 @ 15mA, 3V 60 @ 4mA, 10V
Mounting Type Through Hole Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-92-3 4-TSFP 4-TSFP SOT-343 SOT-23-3
Product Status Obsolete Active Active Active Active
RoHS Status - ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

MMBTH10-7-F (Diodes Incorporated): This substitute provides the most direct functional replacement for applications requiring voltage ratings near or above 15V. With a 25V collector-emitter breakdown rating and 650MHz frequency capability, it accommodates the MPSH17_D75Z electrical specifications. The primary design consideration is the transition from through-hole TO-92-3 packaging to surface-mount SOT-23-3 packaging. This part is active, ROHS3 compliant, and maintains unlimited moisture sensitivity rating. Operating temperature range extends from -55°C to 150°C.

BFP420FH6327XTSA1 (Infineon Technologies): This part is suitable for applications where higher frequency performance (25GHz) is beneficial and voltage requirements can be accommodated within 5.5V maximum rating. The 4-TSFP surface-mount package requires PCB redesign. Active product status with ROHS3 compliance ensures long-term availability. Maximum operating temperature is 150°C.

BFP620FH7764XTSA1 (Infineon Technologies): This substitute operates at 65GHz frequency with 2.8V maximum voltage rating. Selection is appropriate only for low-voltage RF applications where the reduced voltage specification does not conflict with circuit requirements. Active product status and ROHS3 compliance are confirmed. Maximum operating temperature is 150°C.

BFP720ESDH6327XTSA1 (Infineon Technologies): This part delivers 43GHz frequency performance in a compact SOT-343 surface-mount package with 4.7V maximum voltage rating. Suitable for modern RF designs requiring miniaturization and high-frequency operation. Active product status with ROHS3 compliance. Maximum operating temperature is 150°C.

All substitute parts carry REACH Unaffected status and EAR99 ECCN classification, matching the original part's regulatory profile.

Frequently Asked Questions (FAQ)

Q: Can the MMBTH10-7-F directly replace the MPSH17_D75Z in existing through-hole PCB designs?

A: No. The MMBTH10-7-F uses SOT-23-3 surface-mount packaging while the MPSH17_D75Z uses through-hole TO-92-3 packaging. PCB layout modification is required. Adapter boards or manual rework may be necessary for prototype applications.

Q: What is the primary advantage of the Infineon BFP series substitutes over the MMBTH10-7-F?

A: The Infineon BFP420FH6327XTSA1, BFP620FH7764XTSA1, and BFP720ESDH6327XTSA1 offer significantly higher frequency-transition capabilities (25GHz, 65GHz, and 43GHz respectively) compared to the MMBTH10-7-F (650MHz). These parts are engineered for modern high-frequency RF applications and provide superior noise performance at elevated frequencies.

Q: Are all substitute parts RoHS compliant?

A: Yes. All four substitute parts are ROHS3 compliant. The original MPSH17_D75Z does not specify RoHS status in the provided data.

Q: What voltage considerations apply when selecting a substitute?

A: The MPSH17_D75Z operates at 15V maximum collector-emitter breakdown. The MMBTH10-7-F (25V) exceeds this rating and is suitable for equivalent or higher-voltage applications. The Infineon parts (BFP420 at 5.5V, BFP620 at 2.8V, BFP720 at 4.7V) operate at lower voltages and are suitable only for applications where circuit voltage requirements do not exceed their respective ratings.

Q: Do all substitute parts have the same moisture sensitivity level as the original?

A: Yes. All substitute parts, including the original MPSH17_D75Z, carry MSL 1 (Unlimited) rating, indicating no moisture sensitivity restrictions during storage and handling.

Q: What is the impact of switching from through-hole to surface-mount packaging?

A: Surface-mount packages (SOT-23-3, 4-TSFP, SOT-343) require different PCB design, assembly processes, and soldering techniques compared to through-hole TO-92-3 packaging. Design and manufacturing workflows must be updated accordingly.

Q: Are the substitute parts available in high volume?

A: Yes. Current inventory levels are: BFP420FH6327XTSA1 (4290 pcs), BFP620FH7764XTSA1 (5367 pcs), BFP720ESDH6327XTSA1 (4220 pcs), and MMBTH10-7-F (10585 pcs), all classified as new original stock.

Q: What is the operating temperature range for each substitute?

A: The MMBTH10-7-F operates from -55°C to 150°C. The Infineon parts (BFP420, BFP620, BFP720) operate to a maximum of 150°C junction temperature. Specific minimum operating temperatures are not provided in the data for Infineon parts.

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