MPSH17_D26Z RF Transistor NPN Equivalent & Substitute Parts

Part Overview

The MPSH17_D26Z is an RF transistor NPN manufactured by onsemi, designed for RF applications operating at 800MHz with a maximum collector-emitter breakdown voltage of 15V and power dissipation of 350mW. The device is packaged in a through-hole TO-92-3 configuration.

This part carries an obsolete product status. Locating equivalent and substitute components is necessary for ongoing design support, production continuity, and system maintenance where the original part is no longer readily available or where design modifications require enhanced performance characteristics.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	15V	V
Frequency - Transition	800MHz	MHz
Noise Figure (Typ @ f)	6dB @ 200MHz	dB
Gain	24dB	dB
Power - Max	350mW	mW
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 5mA, 10V	—
Mounting Type	Through Hole	—
Package / Case	TO-92-3	—
Product Status	Obsolete	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the MPSH17_D26Z is determined by the following critical parameters:

Electrical Compatibility Criteria:

Transistor type must be NPN
Collector-emitter breakdown voltage must meet or exceed the original specification (15V minimum)
Frequency capability must support the operating frequency range (800MHz minimum)
Power dissipation capability must accommodate the application requirements (350mW minimum)
DC current gain (hFE) characteristics must be compatible with circuit biasing requirements

Mechanical and Packaging Considerations:

Mounting type (through-hole versus surface mount) affects PCB layout and assembly process
Package configuration determines pin compatibility and thermal characteristics

The substitute parts listed below are Infineon Technologies RF transistors that operate at higher frequency bands (22GHz to 46GHz) and lower voltage ratings (4.7V to 5.8V) compared to the MPSH17_D26Z. These devices represent modern surface-mount alternatives with enhanced RF performance characteristics. Selection among these substitutes depends on specific application requirements regarding frequency, voltage, power handling, and mounting technology.

Parameter Comparison

Parameter	MPSH17_D26Z	BFP405H6740XTSA1	BFP420H6801XTSA1	BFP640FESDH6327XTSA1	BFR460L3E6327XTMA1
Manufacturer	onsemi	Infineon	Infineon	Infineon	Infineon
Transistor Type	NPN	NPN	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	15V	5V	5V	4.7V	5.8V
Frequency - Transition	800MHz	25GHz	25GHz	46GHz	22GHz
Gain	24dB	23dB	21dB	8dB ~ 30.5dB	16dB
Power - Max	350mW	75mW	160mW	200mW	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 5mA, 10V	60 @ 5mA, 4V	60 @ 20mA, 4V	110 @ 30mA, 3V	90 @ 20mA, 3V
Current - Collector (Ic) (Max)	—	25mA	35mA	50mA	50mA
Mounting Type	Through Hole	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-92-3	SOT-343	SOT-343	4-TSFP	SOT-883
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

Product Status Consideration: The MPSH17_D26Z carries an obsolete product status. All four substitute parts listed are active products from Infineon Technologies, ensuring ongoing availability and manufacturing support.

Compliance and Certifications: All substitute parts are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements. The original MPSH17_D26Z does not specify RoHS compliance status. All parts share identical ECCN (EAR99) and HTSUS (8541.21.0075) classifications.

Voltage Rating Trade-offs: The substitute parts operate at significantly lower collector-emitter breakdown voltages (4.7V to 5.8V) compared to the original 15V specification. Applications requiring the full 15V rating cannot use these substitutes without circuit redesign.

Frequency and Performance Enhancement: All substitute parts operate at substantially higher transition frequencies (22GHz to 46GHz) compared to the original 800MHz specification. This provides enhanced RF performance for modern applications but may introduce different noise and gain characteristics requiring circuit optimization.

Mounting Technology Transition: The original MPSH17_D26Z uses through-hole TO-92-3 packaging. All substitutes employ surface-mount technology (SOT-343, 4-TSFP, SOT-883), requiring PCB redesign and updated assembly processes.

Power Dissipation: The BFP420H6801XTSA1 (160mW), BFP640FESDH6327XTSA1 (200mW), and BFR460L3E6327XTMA1 (200mW) provide power handling capabilities approaching or exceeding the original 350mW specification. The BFP405H6740XTSA1 (75mW) is limited to lower power applications.

Frequently Asked Questions (FAQ)

Q: Can the MPSH17_D26Z be directly replaced with any of these substitute parts?

A: Direct replacement is not possible due to fundamental differences in packaging (through-hole versus surface-mount), voltage ratings, and frequency characteristics. Circuit redesign is required for any substitution.

Q: Which substitute part most closely matches the original MPSH17_D26Z specifications?

A: No substitute part matches all original specifications. The BFP420H6801XTSA1 provides the closest power handling capability (160mW versus 350mW original) and maintains reasonable gain characteristics (21dB versus 24dB original). However, voltage rating (5V versus 15V) and frequency capability (25GHz versus 800MHz) differ significantly.

Q: What are the voltage rating implications for substitution?

A: The original MPSH17_D26Z operates at 15V collector-emitter breakdown voltage. All substitute parts operate at lower voltages (4.7V to 5.8V). Applications designed for 15V operation cannot use these substitutes without complete circuit redesign to accommodate lower voltage operation.

Q: How do the frequency capabilities of substitute parts compare to the original?

A: The MPSH17_D26Z operates at 800MHz transition frequency. Substitute parts operate at 22GHz to 46GHz, representing 27 to 57 times higher frequency capability. This enhanced frequency performance is suitable for modern RF applications but may introduce different circuit behavior requiring optimization.

Q: What packaging considerations apply to these substitutes?

A: The original MPSH17_D26Z uses through-hole TO-92-3 packaging suitable for manual assembly and breadboarding. All substitutes use surface-mount packages (SOT-343, 4-TSFP, SOT-883) requiring automated assembly equipment and PCB redesign with appropriate trace routing and thermal management.

Q: Are all substitute parts currently available?

A: All four substitute parts carry active product status from Infineon Technologies, indicating current manufacturing and distribution support. Inventory levels range from 914 to 15,872 pieces across authorized distributors.

Q: Do the substitute parts meet current environmental regulations?

A: All substitute parts are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements for electronic components in most jurisdictions.

Q: How do the DC current gain characteristics compare?

A: The original MPSH17_D26Z specifies hFE minimum of 25 @ 5mA, 10V. Substitute parts specify higher hFE values: BFP405H6740XTSA1 (60 @ 5mA, 4V), BFP420H6801XTSA1 (60 @ 20mA, 4V), BFP640FESDH6327XTSA1 (110 @ 30mA, 3V), and BFR460L3E6327XTMA1 (90 @ 20mA, 3V). Higher gain values require circuit biasing adjustments.

Q: Which substitute part is suitable for high-power RF applications?

A: The BFP420H6801XTSA1 (160mW), BFP640FESDH6327XTSA1 (200mW), and BFR460L3E6327XTMA1 (200mW) provide the highest power dissipation capabilities among the substitutes. The BFP405H6740XTSA1 (75mW) is limited to lower power applications.

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