MPSH10RLRPG Equivalent & Substitute Parts

Part Overview

The MPSH10RLRPG is an RF transistor NPN manufactured by onsemi, rated for 25V collector-emitter breakdown voltage and 650MHz transition frequency. This through-hole TO-92-3 device delivers 350mW maximum power dissipation and is designed for RF small-signal applications. The part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. Active alternatives with comparable electrical characteristics and different package options are available from multiple manufacturers.

Substiute Parts

MPSH10RLRPG
onsemiIn Stock: 5125MPSH10RLRPG Datasheet
MPSH10RLRPG
Current Part
KSP10TA
Fairchild SemiconductorIn Stock: 2174KSP10TA Datasheet
KSP10TA
Direct
MMBTH10LT1G
onsemiIn Stock: 62479MMBTH10LT1G Datasheet
MMBTH10LT1G
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2N918 PBFREE
Central Semiconductor CorpIn Stock: 18392N918 PBFREE Datasheet
2N918 PBFREE
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BFP405H6327XTSA1
Infineon TechnologiesIn Stock: 40407BFP405H6327XTSA1 Datasheet
BFP405H6327XTSA1
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BFP720FESDH6327XTSA1
Infineon TechnologiesIn Stock: 1039BFP720FESDH6327XTSA1 Datasheet
BFP720FESDH6327XTSA1
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BFR106E6327HTSA1
Infineon TechnologiesIn Stock: 1000385BFR106E6327HTSA1 Datasheet
BFR106E6327HTSA1
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BFR360FH6327XTSA1
Infineon TechnologiesIn Stock: 185236BFR360FH6327XTSA1 Datasheet
BFR360FH6327XTSA1
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MT3S16U(TE85L,F)
Toshiba Semiconductor and StorageIn Stock: 4003MT3S16U(TE85L,F) Datasheet
MT3S16U(TE85L,F)
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Key Parameters

Parameter Value Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 25 V
Frequency - Transition 650 MHz
Power - Max 350 mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA, 10V
Operating Temperature -55 to 150 °C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution of the MPSH10RLRPG is determined by matching the following critical electrical and mechanical parameters:

Primary Matching Criteria:

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V or higher
  • Frequency - Transition: 650MHz or higher
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V or equivalent specification
  • Power - Max: 350mW or higher

Secondary Considerations:

  • Operating Temperature range compatibility
  • Mounting Type (through-hole or surface-mount alternatives)
  • Package / Case compatibility with board layout

Substitutes are grouped into two categories:

Direct Substitutes (Through-Hole TO-92-3): Parts maintaining identical mounting type and package form factor, enabling direct board-level replacement without layout modification.

Functional Equivalents (Surface-Mount Alternatives): Parts meeting or exceeding electrical specifications but utilizing surface-mount packages (SOT-23-3, SOT-343, SC-70, TSFP), requiring board redesign or adapter solutions.

Parameter Comparison

Part Number Manufacturer Transistor Type Vce Breakdown (Max) Frequency - Transition Power - Max hFE (Min) Operating Temp Mounting Type Package / Case Product Status
MPSH10RLRPG onsemi NPN 25V 650MHz 350mW 60 @ 4mA, 10V -55 to 150°C Through Hole TO-92-3 Obsolete
KSP10TA Fairchild Semiconductor NPN 25V 650MHz 350mW 60 @ 4mA, 10V -55 to 150°C Through Hole TO-92-3 Active
MMBTH10LT1G onsemi NPN 25V 650MHz 225mW 60 @ 4mA, 10V -55 to 150°C Surface Mount SOT-23-3 Active
2N918 PBFREE Central Semiconductor Corp NPN 15V 600MHz 200mW 20 @ 3mA, 1V -65 to 200°C Through Hole TO-72 Active
BFP405H6327XTSA1 Infineon Technologies NPN 5V 25GHz 75mW 60 @ 5mA, 4V -55 to 150°C Surface Mount SOT-343 Active
BFP720FESDH6327XTSA1 Infineon Technologies NPN 4.7V 45GHz 100mW 160 @ 15mA, 3V -55 to 150°C Surface Mount 4-TSFP Active
BFR106E6327HTSA1 Infineon Technologies NPN 15V 5GHz 700mW 70 @ 70mA, 8V -55 to 150°C Surface Mount SOT-23-3 Active
BFR360FH6327XTSA1 Infineon Technologies NPN 9V 14GHz 210mW 90 @ 15mA, 3V -55 to 150°C Surface Mount SOT-723 Active
MT3S16U(TE85L,F) Toshiba Semiconductor and Storage NPN 5V 4GHz 100mW 80 @ 5mA, 1V -55 to 125°C Surface Mount SC-70 Active

Engineering Selection Recommendations

Direct Replacement (No Board Modification Required):

KSP10TA from Fairchild Semiconductor is the primary direct substitute for MPSH10RLRPG. Both parts share identical electrical specifications (25V Vce breakdown, 650MHz transition frequency, 350mW power rating, 60 hFE minimum) and through-hole TO-92-3 package configuration. KSP10TA is active in production, ensuring long-term availability and supply chain continuity. This part is suitable for immediate drop-in replacement in existing designs.

Surface-Mount Alternatives (Board Redesign Required):

MMBTH10LT1G (onsemi, SOT-23-3) maintains the same voltage rating (25V), frequency (650MHz), and gain characteristics (60 hFE) as the original part. Power rating is reduced to 225mW. This part is active with high inventory availability (62,400 units) and RoHS3 compliance. Surface-mount implementation requires PCB layout modification.

BFR106E6327HTSA1 (Infineon Technologies, SOT-23-3) exceeds the original specifications with 15V Vce breakdown, 5GHz transition frequency, and 700mW power rating. This part is suitable for applications requiring higher frequency performance or increased power dissipation. Extremely high inventory availability (1,000,300 units) and RoHS3 compliance support long-term design continuity.

Limited Compatibility Alternatives:

2N918 PBFREE (Central Semiconductor Corp, TO-72) provides through-hole mounting but with reduced electrical specifications: 15V Vce breakdown (below 25V requirement), 600MHz frequency (below 650MHz requirement), and 200mW power (below 350mW requirement). This part is suitable only for applications with relaxed voltage and power requirements.

High-frequency alternatives (BFP405H6327XTSA1, BFP720FESDH6327XTSA1, BFR360FH6327XTSA1, MT3S16U) offer significantly higher transition frequencies (4GHz to 45GHz) but operate at reduced voltage ratings (4.7V to 9V). These parts are applicable only to designs requiring GHz-range performance and operating within lower voltage constraints.

Compliance and Availability:

All active substitute parts carry RoHS3 compliance and REACH unaffected status, meeting current environmental and regulatory requirements. KSP10TA and MMBTH10LT1G are recommended for standard RF applications requiring direct electrical and mechanical compatibility with the obsolete MPSH10RLRPG.

Frequently Asked Questions (FAQ)

Q: Can KSP10TA replace MPSH10RLRPG without any circuit modifications?

A: Yes. KSP10TA is a direct substitute with identical electrical specifications (25V Vce breakdown, 650MHz transition frequency, 350mW power, 60 hFE minimum) and through-hole TO-92-3 package. No circuit or board modifications are required.

Q: What is the difference between MMBTH10LT1G and MPSH10RLRPG?

A: MMBTH10LT1G matches the voltage (25V), frequency (650MHz), and gain (60 hFE) specifications of MPSH10RLRPG but has a reduced power rating (225mW versus 350mW) and uses surface-mount SOT-23-3 packaging instead of through-hole TO-92-3. Board redesign is required for implementation.

Q: Why do high-frequency alternatives like BFP405H6327XTSA1 have lower voltage ratings?

A: High-frequency RF transistors are optimized for GHz-range operation and typically operate at lower supply voltages (5V or less) to maintain performance and reduce parasitic effects. These parts are not suitable for 25V applications.

Q: Is MMBTH10LT1G suitable for all applications using MPSH10RLRPG?

A: MMBTH10LT1G is suitable for applications where the 225mW power rating is sufficient. Applications requiring the full 350mW power dissipation of the original part require either KSP10TA (through-hole) or BFR106E6327HTSA1 (surface-mount, 700mW capability).

Q: What is the inventory status of substitute parts?

A: KSP10TA has 2,100 units in stock. MMBTH10LT1G has 62,400 units available. BFR106E6327HTSA1 has 1,000,300 units in stock, providing the highest supply security for long-term production requirements.

Q: Can 2N918 PBFREE be used as a substitute?

A: 2N918 PBFREE does not meet the electrical requirements of MPSH10RLRPG. It has a 15V Vce breakdown (below the 25V requirement), 600MHz frequency (below 650MHz), and 200mW power (below 350mW). Use is limited to applications with relaxed specifications.

Q: Are all substitute parts RoHS3 compliant?

A: All active substitute parts listed (KSP10TA, MMBTH10LT1G, BFP405H6327XTSA1, BFP720FESDH6327XTSA1, BFR106E6327HTSA1, BFR360FH6327XTSA1, MT3S16U) are RoHS3 compliant and REACH unaffected, meeting current environmental regulations.

Q: What package types are available for substitution?

A: Through-hole TO-92-3 (KSP10TA, 2N918 PBFREE), surface-mount SOT-23-3 (MMBTH10LT1G, BFR106E6327HTSA1), surface-mount SOT-343 (BFP405H6327XTSA1), surface-mount 4-TSFP (BFP720FESDH6327XTSA1), surface-mount SOT-723 (BFR360FH6327XTSA1), and surface-mount SC-70 (MT3S16U).

Q: Which substitute offers the best long-term availability?

A: BFR106E6327HTSA1 offers the highest inventory (1,000,300 units) and exceeds the original specifications (700mW power, 5GHz frequency, 15V Vce). For through-hole applications, KSP10TA is the recommended choice with active production status.

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