MPSH10RLRAG RF Transistor NPN Equivalent & Substitute Parts

Part Overview

The MPSH10RLRAG is an RF transistor manufactured by onsemi, classified as an NPN bipolar junction transistor (BJT) designed for radio frequency applications. This component operates at 25V collector-emitter breakdown voltage with a transition frequency of 650MHz and maximum power dissipation of 350mW in a through-hole TO-92-3 package. The product status is obsolete, making equivalent and substitute parts necessary for ongoing design support, maintenance, and new production requirements where through-hole or surface-mount alternatives are acceptable.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	25	V
Frequency - Transition	650	MHz
Power - Max	350	mW
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 4mA, 10V	—
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-226-3, TO-92-3 Long Body	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the MPSH10RLRAG is determined by strict alignment of the following electrical and mechanical parameters:

Primary Substitution Criteria:

Transistor Type: NPN (required)
Voltage - Collector Emitter Breakdown (Max): ≥25V (minimum requirement)
Frequency - Transition: ≥650MHz (minimum requirement)
Power - Max: ≥350mW (minimum requirement for through-hole) or ≥225mW (acceptable for surface-mount alternatives with reduced power dissipation)
DC Current Gain (hFE): ≥60 @ specified conditions
Operating Temperature Range: Must include -55°C to 150°C or equivalent

Secondary Considerations:

Mounting Type: Through-hole preferred for direct replacement; surface-mount acceptable for design flexibility
Package compatibility: TO-92-3 (through-hole) or SOT-23-3 / SOT-323 (surface-mount)
Product Status: Active status preferred for long-term availability

Substitutes are grouped into two categories: Direct Electrical Equivalents (matching or exceeding all key parameters) and Functional Alternatives (meeting core RF performance requirements with different package or power ratings).

Parameter Comparison

Part Number	Manufacturer	Transistor Type	Vce Breakdown (Max) [V]	Frequency - Transition [MHz]	Power - Max [mW]	hFE (Min)	Mounting Type	Package / Case	Product Status
MPSH10RLRAG	onsemi	NPN	25	650	350	60 @ 4mA, 10V	Through Hole	TO-92-3	Obsolete
MMBTH10LT1G	onsemi	NPN	25	650	225	60 @ 4mA, 10V	Surface Mount	SOT-23-3	Active
2SC2714-O(TE85L,F)	Toshiba Semiconductor and Storage	NPN	30	550	100	70 @ 1mA, 6V	Surface Mount	SOT-23-3	Active
BFR193WH6327XTSA1	Infineon Technologies	NPN	12	8000	580	70 @ 30mA, 8V	Surface Mount	SOT-323	Active
HFA3102BZ	Renesas Electronics Corporation	6 NPN	12	10000	250	40 @ 10mA, 3V	Surface Mount	14-SOIC	Active
BFP740FH6327XTSA1	Infineon Technologies	NPN	4.7	42000	160	160 @ 25mA, 3V	Surface Mount	4-TSFP	Active
BFP760H6327XTSA1	Infineon Technologies	NPN	4	45000	240	160 @ 35mA, 3V	Surface Mount	SOT-343	Active

Engineering Selection Recommendations

Direct Equivalent (Recommended for Replacement):

MMBTH10LT1G (onsemi) is the primary substitute for MPSH10RLRAG. This part maintains identical electrical specifications (25V Vce breakdown, 650MHz transition frequency, 60 hFE minimum) and identical operating temperature range (-55°C to 150°C). The primary difference is mounting technology: surface-mount SOT-23-3 package versus through-hole TO-92-3. MMBTH10LT1G is active product status with ROHS3 compliance and unlimited moisture sensitivity level (MSL 1), ensuring long-term availability and regulatory compliance. Power dissipation is reduced to 225mW, which is acceptable for most RF applications operating below the original 350mW specification.

Alternative Substitutes (Application-Dependent):

BFR193WH6327XTSA1 (Infineon Technologies) provides higher transition frequency (8GHz) and superior power handling (580mW) with active product status and ROHS3 compliance. However, Vce breakdown is reduced to 12V, requiring circuit voltage verification. This part is suitable for applications where higher frequency performance is beneficial and operating voltages remain below 12V.

2SC2714-O(TE85L,F) (Toshiba Semiconductor and Storage) offers 30V Vce breakdown (exceeding original specification) with active status and RoHS compliance. Transition frequency is reduced to 550MHz, and power dissipation is limited to 100mW. This part is suitable for low-power RF applications requiring higher voltage margins.

Not Recommended for Direct Substitution:

BFP740FH6327XTSA1 and BFP760H6327XTSA1 (Infineon Technologies) are ultra-high-frequency devices (42GHz and 45GHz respectively) with significantly reduced Vce breakdown (4.7V and 4V). These parts are designed for microwave and millimeter-wave applications and are not suitable for standard RF circuits designed for the MPSH10RLRAG.

HFA3102BZ (Renesas Electronics Corporation) is a multi-transistor array (6 NPN) in 14-SOIC package, not a single-transistor replacement. This part is suitable only for applications requiring integrated multi-transistor functionality.

Frequently Asked Questions (FAQ)

Q: Can MMBTH10LT1G directly replace MPSH10RLRAG in existing through-hole PCB designs?

A: MMBTH10LT1G is electrically equivalent but requires PCB redesign due to different package format (SOT-23-3 surface-mount versus TO-92-3 through-hole). Pin configuration differs; refer to respective datasheets for pinout mapping. For through-hole designs, MMBTH10LT1G requires adapter board or manual rework.

Q: What is the impact of reduced power dissipation (225mW vs. 350mW) when using MMBTH10LT1G?

A: MMBTH10LT1G is suitable for applications where actual power dissipation remains below 225mW. Verify circuit design power calculations. If original design requires sustained operation above 225mW, alternative parts with higher power ratings (such as BFR193WH6327XTSA1 at 580mW) must be evaluated, with voltage compatibility verification.

Q: Are all substitute parts RoHS and REACH compliant?

A: MMBTH10LT1G, BFR193WH6327XTSA1, BFP740FH6327XTSA1, and BFP760H6327XTSA1 are ROHS3 compliant. 2SC2714-O(TE85L,F) is RoHS compliant. HFA3102BZ is ROHS3 compliant. All listed parts are REACH unaffected or compliant. Verify specific compliance requirements for your application and region.

Q: What is the difference between TO-92-3 and SOT-23-3 packages?

A: TO-92-3 is a through-hole package with formed leads for insertion into PCB holes. SOT-23-3 is a surface-mount package with gull-wing leads for reflow soldering. SOT-23-3 offers smaller footprint and is standard in modern surface-mount assembly. Pin assignments differ; direct mechanical substitution is not possible without PCB redesign.

Q: Can BFR193WH6327XTSA1 be used in circuits designed for 25V operation?

A: No. BFR193WH6327XTSA1 has maximum Vce breakdown of 12V. Operating at 25V will cause device failure. This part is suitable only for circuits operating at 12V or below. Verify all circuit voltage levels before substitution.

Q: Why is MPSH10RLRAG listed as obsolete?

A: Obsolete status indicates the manufacturer (onsemi) has discontinued production. MMBTH10LT1G is the active replacement offering identical electrical performance in modern surface-mount packaging, supporting design continuity and long-term supply availability.

Q: What is MSL (Moisture Sensitivity Level) and why does it matter?

A: MSL indicates moisture absorption sensitivity during storage and handling. MSL 1 (unlimited) means the component has no moisture sensitivity restrictions and requires no special storage conditions. MSL 3 (168 hours) requires controlled storage environment. For long-term inventory management, MSL 1 parts (MMBTH10LT1G, BFR193WH6327XTSA1, BFP740FH6327XTSA1, BFP760H6327XTSA1) are preferred.

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