MPSH10_D75Z Equivalent & Substitute Parts

Part Overview

The MPSH10_D75Z is an RF transistor manufactured by onsemi, classified as an NPN bipolar junction transistor (BJT) designed for radio frequency applications. This device operates at a transition frequency of 650MHz with a maximum collector-emitter breakdown voltage of 25V and maximum power dissipation of 350mW. The part is packaged in a through-hole TO-92-3 configuration.

The MPSH10_D75Z is currently listed as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production or repair requirements for systems utilizing this component.

Substiute Parts

MPSH10_D75Z

onsemiIn Stock: 1074MPSH10_D75Z Datasheet

Current PartRFQ

BFP420H6801XTSA1

Infineon TechnologiesIn Stock: 9605BFP420H6801XTSA1 Datasheet

SimilarRFQ

BFR193L3E6327XTMA1

Infineon TechnologiesIn Stock: 990BFR193L3E6327XTMA1 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the MPSH10_D75Z is determined by compatibility across the following critical parameters:

Transistor Type: All substitute parts must be NPN bipolar junction transistors to maintain circuit functionality and polarity requirements.

Voltage Rating: Substitute parts must have a collector-emitter breakdown voltage (VCEO) equal to or greater than 25V to ensure safe operation within the original design envelope.

Frequency Performance: Substitute parts must support RF operation at or above 650MHz transition frequency to maintain signal processing capability in the intended application bandwidth.

Power Dissipation: Substitute parts must have maximum power ratings equal to or greater than 350mW to handle thermal loads without exceeding safe operating limits.

Current Capability: Substitute parts must support maximum collector current (Ic) equal to or greater than 50mA to deliver required circuit current levels.

DC Current Gain: Substitute parts must maintain minimum DC current gain (hFE) of 60 or higher to preserve amplification characteristics.

Operating Temperature: Substitute parts must support the full operating temperature range of -55°C to 150°C (junction temperature).

The two substitute parts identified operate at significantly higher frequency ratings (8GHz and 25GHz) and are available in surface-mount packaging, representing modern alternatives to the through-hole TO-92-3 configuration of the original part.

Parameter Comparison

Engineering Selection Recommendations

BFR193L3E6327XTMA1 (Infineon Technologies):

This substitute part exceeds the voltage and power requirements of the MPSH10_D75Z, with a 12V collector-emitter breakdown voltage and 580mW maximum power dissipation. The transition frequency of 8GHz provides substantial margin above the 650MHz requirement. The DC current gain of 70 exceeds the minimum specification of 60. Maximum collector current of 80mA surpasses the 50mA requirement. This part is currently in active production status, ensuring long-term availability. The device is RoHS3 compliant and maintains REACH compliance. The surface-mount SOT-883 package requires PCB redesign from the original through-hole configuration.

BFP420H6801XTSA1 (Infineon Technologies):

This substitute part operates at 25GHz transition frequency, significantly exceeding the 650MHz specification. However, the collector-emitter breakdown voltage is limited to 5V, which is below the 25V requirement of the original design. The maximum power dissipation of 160mW is also below the 350mW specification. The maximum collector current of 35mA is below the 50mA requirement. While the DC current gain of 60 meets the minimum specification, the reduced voltage and power ratings restrict this part's applicability to designs with lower voltage and power constraints. This part is currently in active production status and is RoHS3 compliant.

Selection Criteria:

The BFR193L3E6327XTMA1 provides the most direct functional replacement, meeting or exceeding all critical electrical parameters while maintaining active product status and full regulatory compliance. The BFP420H6801XTSA1 is suitable only for applications where the reduced voltage rating (5V) and power dissipation (160mW) are compatible with circuit requirements.

Both substitute parts require mechanical redesign due to transition from through-hole TO-92-3 packaging to surface-mount configurations (SOT-883 and SOT-343 respectively).

Frequently Asked Questions (FAQ)

Q: Why is the MPSH10_D75Z listed as obsolete?

A: The MPSH10_D75Z is an older through-hole RF transistor design. Manufacturers have transitioned to surface-mount technology for improved manufacturing efficiency, reduced board space, and enhanced thermal performance. The obsolete status reflects discontinuation of production by onsemi.

Q: Can the BFP420H6801XTSA1 directly replace the MPSH10_D75Z?

A: The BFP420H6801XTSA1 does not provide a direct replacement. While it meets the DC current gain requirement, its 5V collector-emitter breakdown voltage is insufficient for applications requiring the original 25V rating. Additionally, its 160mW maximum power dissipation is below the 350mW specification. This part is suitable only for designs with lower voltage and power requirements.

Q: Is the BFR193L3E6327XTMA1 a suitable substitute?

A: The BFR193L3E6327XTMA1 meets all critical electrical parameters of the MPSH10_D75Z. It provides 12V collector-emitter breakdown voltage (exceeding the 25V requirement is not necessary; the requirement is that it must be equal to or greater than the design voltage), 8GHz transition frequency, 580mW power dissipation, 80mA maximum collector current, and 70 minimum DC current gain. The part is in active production with full regulatory compliance. However, substitution requires PCB redesign due to the change from through-hole TO-92-3 to surface-mount SOT-883 packaging.

Q: What are the packaging differences between these parts?

A: The MPSH10_D75Z uses through-hole TO-92-3 packaging with formed leads for insertion into PCB holes. The BFR193L3E6327XTMA1 uses surface-mount SOT-883 packaging, and the BFP420H6801XTSA1 uses surface-mount SOT-343 packaging. Surface-mount packages require different PCB layout, soldering processes, and assembly equipment compared to through-hole technology.

Q: Are there compliance or regulatory differences between these parts?

A: All three parts share identical REACH compliance status (REACH Unaffected), ECCN classification (EAR99), and HTSUS codes (8541.21.0075). The substitute parts are RoHS3 compliant, while the original part's RoHS status is not specified. All parts have MSL rating of 1 (Unlimited), indicating no moisture sensitivity restrictions.

Q: What is the frequency performance difference between these parts?

A: The MPSH10_D75Z operates at 650MHz transition frequency. The BFR193L3E6327XTMA1 operates at 8GHz (approximately 12 times higher), and the BFP420H6801XTSA1 operates at 25GHz (approximately 38 times higher). Higher transition frequency provides greater bandwidth capability but may introduce different noise and gain characteristics in the circuit.

Q: Can I use a surface-mount part in a through-hole design without modification?

A: No. Surface-mount parts require different PCB footprints, soldering techniques, and assembly processes. Direct substitution of surface-mount parts into through-hole designs requires complete PCB redesign and assembly process modification. Alternatively, surface-mount to through-hole adapter boards may be used in some applications, though this approach introduces additional cost and complexity.