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MPSH10_D27Z Equivalent & Substitute Parts
Part Overview
The MPSH10_D27Z is an RF transistor manufactured by onsemi, classified as an NPN bipolar junction transistor (BJT) designed for radio frequency applications. This device operates at a maximum collector-emitter breakdown voltage of 25V with a transition frequency of 650MHz and maximum power dissipation of 350mW. The part is packaged in a through-hole TO-92-3 configuration.
The MPSH10_D27Z is currently listed as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production or repair requirements for systems utilizing this component.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN | — |
| Voltage - Collector Emitter Breakdown (Max) | 25V | V |
| Frequency - Transition | 650MHz | MHz |
| Power - Max | 350mW | mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 4mA, 10V | — |
| Current - Collector (Ic) (Max) | 50mA | mA |
| Operating Temperature Range | -55°C to 150°C | °C |
| Mounting Type | Through Hole | — |
| Package / Case | TO-92-3 | — |
| Product Status | Obsolete | — |
Substitute Part Grouping Explanation
Substitution of the MPSH10_D27Z requires evaluation of electrical and mechanical compatibility based on the following critical parameters:
Electrical Compatibility Criteria:
- Transistor type must be NPN
- Voltage rating must meet or exceed the 25V collector-emitter breakdown specification
- Frequency capability must support or exceed 650MHz transition frequency
- Power dissipation must accommodate the 350mW maximum requirement
- Current handling must support the 50mA maximum collector current
- DC current gain characteristics must be compatible with circuit biasing requirements
Mechanical Compatibility Criteria:
- Mounting type and package configuration must be compatible with the application
- Operating temperature range must encompass the -55°C to 150°C specification
- Lead configuration and physical dimensions must fit the existing PCB layout
The substitute parts identified for the MPSH10_D27Z are:
- BFP843H6327XTSA1 (Infineon Technologies) — Surface mount RF transistor with reduced voltage rating but higher frequency capability and active product status
- MAPR-000912-500S00 (MACOM Technology Solutions) — High-power chassis mount RF transistor with elevated voltage and current ratings and active product status
Parameter Comparison
| Parameter | MPSH10_D27Z (Main) | BFP843H6327XTSA1 | MAPR-000912-500S00 |
|---|---|---|---|
| Manufacturer | onsemi | Infineon Technologies | MACOM Technology Solutions |
| Transistor Type | NPN | NPN | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 25V | 2.25V | 80V |
| Frequency - Transition | 650MHz | Not specified | Not specified |
| Power - Max | 350mW | 125mW | 500W |
| Current - Collector (Ic) (Max) | 50mA | 55mA | 52.5A |
| Operating Temperature (TJ) | -55°C to 150°C | 150°C | 200°C |
| Mounting Type | Through Hole | Surface Mount | Chassis Mount |
| Package / Case | TO-92-3 | SOT-343 | Not specified |
| Product Status | Obsolete | Active | Active |
| RoHS Status | Not specified | ROHS3 Compliant | ROHS3 Compliant |
| REACH Status | REACH Unaffected | REACH Unaffected | REACH Unaffected |
Engineering Selection Recommendations
BFP843H6327XTSA1 Considerations:
The BFP843H6327XTSA1 is an active product with ROHS3 compliance and REACH unaffected status. However, this substitute presents significant electrical incompatibility with the MPSH10_D27Z. The collector-emitter breakdown voltage is rated at 2.25V, substantially below the 25V specification of the main part. This voltage limitation makes the BFP843H6327XTSA1 unsuitable for direct substitution in circuits designed for 25V operation. Additionally, the mounting type is surface mount (SOT-343) rather than through-hole, requiring PCB redesign. The maximum power dissipation of 125mW is also lower than the 350mW requirement.
MAPR-000912-500S00 Considerations:
The MAPR-000912-500S00 is an active product with ROHS3 compliance and REACH unaffected status. This substitute exceeds the electrical specifications of the MPSH10_D27Z in voltage rating (80V versus 25V), current capacity (52.5A versus 50mA), and power dissipation (500W versus 350mW). However, the mounting type is chassis mount rather than through-hole, and the package configuration differs fundamentally from the TO-92-3 form factor. This substitute is designed for high-power applications and is not mechanically compatible with the original through-hole PCB layout.
Substitution Assessment:
Neither substitute part provides direct electrical and mechanical compatibility with the MPSH10_D27Z. The BFP843H6327XTSA1 has insufficient voltage rating and different mounting technology. The MAPR-000912-500S00 is designed for a different application class with incompatible packaging. Selection of either substitute requires circuit redesign and PCB layout modification. The choice between these parts depends on whether the application can accommodate surface mount or chassis mount technology and whether the electrical specifications can be adapted to the substitute part's ratings.
Frequently Asked Questions (FAQ)
Q: Can the BFP843H6327XTSA1 directly replace the MPSH10_D27Z in an existing circuit?
A: No. The BFP843H6327XTSA1 has a maximum collector-emitter breakdown voltage of 2.25V, which is insufficient for circuits designed for the MPSH10_D27Z's 25V rating. Additionally, the BFP843H6327XTSA1 uses surface mount packaging (SOT-343) while the MPSH10_D27Z uses through-hole packaging (TO-92-3), requiring PCB redesign.
Q: Can the MAPR-000912-500S00 directly replace the MPSH10_D27Z in an existing circuit?
A: No. The MAPR-000912-500S00 uses chassis mount packaging, which is mechanically incompatible with the through-hole TO-92-3 footprint of the MPSH10_D27Z. This substitute is designed for high-power applications and requires a different PCB layout and mounting structure.
Q: What are the key electrical parameters that determine substitution compatibility?
A: The critical parameters are collector-emitter breakdown voltage (must meet or exceed 25V), transition frequency (must support 650MHz operation), maximum power dissipation (must accommodate 350mW), maximum collector current (must support 50mA), and DC current gain characteristics. All substitute parts must be NPN transistors.
Q: Why is the MPSH10_D27Z listed as obsolete?
A: The MPSH10_D27Z is an obsolete product, meaning it is no longer manufactured by onsemi. Identifying substitute parts is necessary for ongoing production support, repair, and design continuity.
Q: What is the significance of the product status difference between the main part and substitutes?
A: The MPSH10_D27Z is obsolete, while both BFP843H6327XTSA1 and MAPR-000912-500S00 are active products. Active products have ongoing manufacturing support, documented specifications, and supply chain availability. Obsolete products may have limited inventory and no future production.
Q: Are the substitute parts RoHS compliant?
A: Both substitute parts (BFP843H6327XTSA1 and MAPR-000912-500S00) are ROHS3 compliant. The MPSH10_D27Z RoHS status is not specified in the provided data.
Q: What mounting technology differences exist between these parts?
A: The MPSH10_D27Z uses through-hole mounting with a TO-92-3 package. The BFP843H6327XTSA1 uses surface mount technology with a SOT-343 package. The MAPR-000912-500S00 uses chassis mount technology. These differences require different PCB designs and assembly processes.
Q: Can frequency specifications be compared across these parts?
A: The MPSH10_D27Z has a specified transition frequency of 650MHz. The BFP843H6327XTSA1 does not have a transition frequency specification provided, though it includes noise figure data across a 450MHz to 10GHz range. The MAPR-000912-500S00 does not have frequency specifications provided. Direct frequency comparison is not possible with the available data.
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