MPSH10_D26Z Equivalent & Substitute Parts

Part Overview

The MPSH10_D26Z is an RF transistor manufactured by onsemi, classified as an NPN bipolar junction transistor (BJT) designed for radio frequency applications. This device operates at a transition frequency of 650MHz with a maximum collector-emitter breakdown voltage of 25V and maximum power dissipation of 350mW. The MPSH10_D26Z is packaged in a through-hole TO-92-3 configuration and is currently listed as obsolete. Due to its obsolete status and limited availability for new designs, equivalent substitute parts from active product lines are necessary for ongoing production and maintenance applications.

Substiute Parts

MPSH10_D26Z

onsemiIn Stock: 877MPSH10_D26Z Datasheet

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BFP405FH6327XTSA1

Infineon TechnologiesIn Stock: 3962BFP405FH6327XTSA1 Datasheet

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BFP620FH7764XTSA1

Infineon TechnologiesIn Stock: 5428BFP620FH7764XTSA1 Datasheet

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BFP720FH6327XTSA1

Infineon TechnologiesIn Stock: 7560BFP720FH6327XTSA1 Datasheet

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BFP840FESDH6327XTSA1

Infineon TechnologiesIn Stock: 17906BFP840FESDH6327XTSA1 Datasheet

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BFQ790H6327XTSA1

Infineon TechnologiesIn Stock: 2425BFQ790H6327XTSA1 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the MPSH10_D26Z is determined by the following critical parameters: transistor type (NPN), maximum collector-emitter breakdown voltage, transition frequency capability, maximum power dissipation, maximum collector current, and DC current gain characteristics. The substitute parts listed are from Infineon Technologies and represent active product lines with current manufacturing status.

The substitution logic is based on the following allowed parameters:

• Transistor Type: All substitutes must be NPN configuration
• Voltage Rating: Substitute parts must support the operating voltage requirements of the application
• Frequency Performance: Substitute parts must meet or exceed the 650MHz transition frequency requirement
• Power Dissipation: Substitute parts must handle the thermal requirements of the application
• Current Capability: Substitute parts must support the maximum collector current demands
• DC Current Gain: Substitute parts must provide adequate current amplification at specified operating points

The substitute parts identified include both surface-mount and through-hole configurations from the Infineon Technologies portfolio, offering various performance levels suitable for different application requirements.

Parameter Comparison

Engineering Selection Recommendations

BFQ790H6327XTSA1 (Infineon Technologies): This substitute provides the closest voltage rating match at 6.1V maximum collector-emitter breakdown voltage, exceeding the MPSH10_D26Z requirement of 25V is not necessary for applications designed for the original part. However, this device is also listed as obsolete, limiting its suitability for new production. The BFQ790H6327XTSA1 offers superior power dissipation capability at 1.5W and higher maximum collector current at 300mA. This part is ROHS3 compliant and suitable for applications requiring higher current handling.

BFP720FH6327XTSA1 (Infineon Technologies): This active product offers a transition frequency of 45GHz, significantly exceeding the 650MHz requirement of the MPSH10_D26Z. The maximum collector-emitter breakdown voltage is 4.7V, which is lower than the original specification. This device is ROHS3 compliant and currently in active production status, making it suitable for new designs. The 4-TSFP surface-mount package requires PCB layout modifications from the original through-hole configuration.

BFP405FH6327XTSA1 (Infineon Technologies): This active product operates at 25GHz transition frequency with a 4.5V maximum collector-emitter breakdown voltage. Power dissipation is rated at 75mW, lower than the original 350mW specification. This device is ROHS3 compliant and in active production. The 4-TSFP surface-mount package requires design modifications.

BFP620FH7764XTSA1 (Infineon Technologies): This active product provides the highest transition frequency at 65GHz with a 2.8V maximum collector-emitter breakdown voltage. Power dissipation is 185mW, and maximum collector current is 80mA. This device is ROHS3 compliant and in active production status. The 4-TSFP surface-mount package requires PCB redesign.

BFP840FESDH6327XTSA1 (Infineon Technologies): This active product operates at 85GHz transition frequency with a 2.6V maximum collector-emitter breakdown voltage. Power dissipation is 75mW with a maximum collector current of 35mA. This device is ROHS3 compliant and in active production. The PG-TSFP-4-1 surface-mount package requires design modifications.

For applications requiring through-hole mounting compatibility with the original MPSH10_D26Z, the BFQ790H6327XTSA1 in TO-243AA package provides the closest form factor, though it is also obsolete. For new production designs, the BFP720FH6327XTSA1, BFP405FH6327XTSA1, BFP620FH7764XTSA1, and BFP840FESDH6327XTSA1 are all active products from Infineon Technologies with ROHS3 compliance, requiring surface-mount PCB implementation.

Frequently Asked Questions (FAQ)

Q: Can the BFP720FH6327XTSA1 directly replace the MPSH10_D26Z in existing through-hole PCB designs?

A: No. The BFP720FH6327XTSA1 uses a 4-TSFP surface-mount package, while the MPSH10_D26Z uses a through-hole TO-92-3 package. PCB layout and assembly modifications are required. The BFQ790H6327XTSA1 offers a TO-243AA surface-mount package that is closer to the original form factor but still requires design changes.

Q: What is the primary reason for substituting the MPSH10_D26Z?

A: The MPSH10_D26Z is listed as obsolete. Substitute parts from active product lines ensure long-term availability and compliance with current manufacturing standards, including ROHS3 compliance for environmental regulations.

Q: Do all substitute parts meet the 25V collector-emitter breakdown voltage specification of the MPSH10_D26Z?

A: No. The substitute parts have lower maximum collector-emitter breakdown voltages ranging from 2.6V to 6.1V. Application circuit design must ensure that the substitute part operates within its specified voltage ratings. The original 25V specification may not be necessary for all applications using the MPSH10_D26Z.

Q: Which substitute part offers the best frequency performance?

A: The BFP840FESDH6327XTSA1 provides the highest transition frequency at 85GHz, followed by the BFP620FH7764XTSA1 at 65GHz. Both significantly exceed the 650MHz specification of the MPSH10_D26Z.

Q: Are all active substitute parts ROHS3 compliant?

A: Yes. The BFP720FH6327XTSA1, BFP405FH6327XTSA1, BFP620FH7764XTSA1, and BFP840FESDH6327XTSA1 are all ROHS3 compliant. The BFQ790H6327XTSA1 is also ROHS3 compliant but is listed as obsolete.

Q: What is the key difference between the BFP620FH7764XTSA1 and BFP720FH6327XTSA1?

A: The BFP620FH7764XTSA1 operates at 65GHz with a 2.8V maximum collector-emitter breakdown voltage and 80mA maximum collector current. The BFP720FH6327XTSA1 operates at 45GHz with a 4.7V maximum collector-emitter breakdown voltage and 25mA maximum collector current. Selection depends on the specific frequency and current requirements of the application.

Q: Can the BFP405FH6327XTSA1 handle the same power dissipation as the MPSH10_D26Z?

A: No. The BFP405FH6327XTSA1 is rated for 75mW maximum power dissipation, while the MPSH10_D26Z is rated for 350mW. Applications requiring higher power dissipation should consider the BFQ790H6327XTSA1 (1.5W) or BFP620FH7764XTSA1 (185mW).

Q: What mounting considerations apply when switching from the MPSH10_D26Z to a substitute part?

A: The MPSH10_D26Z uses through-hole TO-92-3 mounting. All active substitute parts use surface-mount packages (4-TSFP or PG-TSFP-4-1), requiring PCB redesign, new footprints, and surface-mount assembly processes. The BFQ790H6327XTSA1 uses a TO-243AA surface-mount package, which is also different from the original through-hole configuration.