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MPSA92G Equivalent & Substitute Parts
Part Overview
The MPSA92G is a PNP bipolar junction transistor manufactured by onsemi, rated for 300 V collector-emitter breakdown voltage and 500 mA maximum collector current in a TO-92 through-hole package. This device is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and ongoing production requirements. Equivalent parts maintain identical electrical specifications and package compatibility, while substitute parts offer comparable performance within defined parameter tolerances suitable for the same application circuits.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | PNP | — |
| Collector-Emitter Breakdown Voltage (Max) | 300 | V |
| Collector Current (Max) | 500 | mA |
| Power Dissipation (Max) | 625 | mW |
| Transition Frequency | 50 | MHz |
| DC Current Gain (hFE Min) | 25 | @ 30mA, 10V |
| Vce Saturation (Max) | 500 | mV @ 2mA, 20mA |
| Mounting Type | Through Hole | — |
| Package | TO-92-3 (TO-226) | — |
| Operating Temperature Range | -55 to 150 | °C |
Substitute Part Grouping Explanation
Substitute parts for the MPSA92G are classified into two categories based on electrical and mechanical compatibility:
Direct Equivalents (Identical Specifications): Parts maintaining all critical electrical parameters—300 V breakdown voltage, 500 mA collector current, 625 mW power dissipation, 50 MHz transition frequency, and TO-92 through-hole package—with active product status and current manufacturing availability.
Functional Substitutes (Enhanced Specifications): Parts exceeding one or more key electrical parameters while maintaining through-hole mounting and PNP polarity. These include higher breakdown voltages (350 V or 400 V), increased power dissipation (1 W or 1.2 W), higher transition frequencies (85 MHz or 200 MHz), or improved current gain characteristics. Functional substitutes are suitable for applications where the MPSA92G specifications represent minimum requirements.
Surface Mount Alternative: The MMBTA92LT1G provides electrical equivalence in SOT-23-3 surface mount packaging for designs requiring miniaturization, with reduced power dissipation (300 mW) due to package thermal limitations.
Substitution eligibility is determined by:
- Collector-emitter breakdown voltage equal to or greater than 300 V
- Collector current capacity equal to or greater than 500 mA
- PNP transistor type
- Compatible mounting technology (through-hole or surface mount as required)
- Active product status with current manufacturing availability
Parameter Comparison
| Part Number | Manufacturer | Vce(BR) Max (V) | Ic Max (mA) | Power Max (mW) | fT (MHz) | hFE Min | Package | Mounting | Status |
|---|---|---|---|---|---|---|---|---|---|
| MPSA92G | onsemi | 300 | 500 | 625 | 50 | 25 | TO-92-3 | Through Hole | Obsolete |
| KSP92BU | Fairchild Semiconductor | 300 | 500 | 625 | 50 | 25 | TO-92-3 | Through Hole | Active |
| MPSA92 PBFREE | Central Semiconductor Corp | 300 | 500 | 625 | 50 | 25 | TO-92-3 | Through Hole | Active |
| 2N6520TA | onsemi | 350 | 500 | 625 | 200 | 20 | TO-92-3 | Through Hole | Active |
| ZTX757STZ | Diodes Incorporated | 300 | 500 | 1000 | 30 | 50 | E-Line-3 | Through Hole | Active |
| ZTX758STZ | Diodes Incorporated | 400 | 500 | 1000 | 50 | 40 | E-Line-3 | Through Hole | Active |
| ZTX958 | Diodes Incorporated | 400 | 500 | 1200 | 85 | 100 | E-Line-3 | Through Hole | Active |
| MMBTA92LT1G | onsemi | 300 | 500 | 300 | 50 | 25 | SOT-23-3 | Surface Mount | Active |
Engineering Selection Recommendations
For Direct Replacement (Pin-Compatible, Identical Specifications):
Select KSP92BU or MPSA92 PBFREE when direct electrical and mechanical equivalence is required. Both parts maintain 300 V breakdown voltage, 500 mA collector current, 625 mW power dissipation, and TO-92-3 through-hole packaging. KSP92BU is manufactured by Fairchild Semiconductor with active product status. MPSA92 PBFREE is manufactured by Central Semiconductor Corp with ROHS3 compliance and extended operating temperature range (-65°C to 150°C). Both are suitable for existing circuit designs without modification.
For Enhanced Performance (Higher Voltage or Power Capability):
Select ZTX757STZ, ZTX758STZ, or ZTX958 when application requirements exceed MPSA92G specifications. ZTX757STZ maintains 300 V breakdown voltage with 1 W power dissipation and 30 MHz transition frequency. ZTX758STZ provides 400 V breakdown voltage with 1 W power dissipation and 50 MHz transition frequency. ZTX958 offers 400 V breakdown voltage with 1.2 W power dissipation and 85 MHz transition frequency. All three are manufactured by Diodes Incorporated with ROHS3 compliance and active product status. E-Line-3 package is mechanically compatible with TO-92 footprints.
For Surface Mount Applications:
Select MMBTA92LT1G when miniaturization and surface mount assembly are required. This part maintains 300 V breakdown voltage, 500 mA collector current, and 50 MHz transition frequency in SOT-23-3 packaging. Power dissipation is reduced to 300 mW due to package thermal characteristics. Manufactured by onsemi with ROHS3 compliance and active product status.
For Higher Frequency Applications:
Select 2N6520TA when transition frequency exceeding 50 MHz is required. This part provides 200 MHz transition frequency with 350 V breakdown voltage and 500 mA collector current in TO-92-3 through-hole packaging. Manufactured by onsemi with ROHS3 compliance and active product status.
All recommended substitutes carry REACH Unaffected status and EAR99 ECCN classification consistent with the original MPSA92G.
Frequently Asked Questions (FAQ)
Q: Can KSP92BU be used as a direct replacement for MPSA92G in existing designs?
A: Yes. KSP92BU maintains identical electrical specifications (300 V breakdown voltage, 500 mA collector current, 625 mW power dissipation, 50 MHz transition frequency) and TO-92-3 through-hole packaging. No circuit modifications are required. KSP92BU is manufactured by Fairchild Semiconductor with active product status.
Q: What is the difference between ZTX757STZ and ZTX758STZ?
A: ZTX757STZ is rated for 300 V collector-emitter breakdown voltage with 30 MHz transition frequency. ZTX758STZ is rated for 400 V collector-emitter breakdown voltage with 50 MHz transition frequency. Both provide 1 W power dissipation and 500 mA collector current. ZTX758STZ is suitable for applications requiring higher voltage capability.
Q: Is MMBTA92LT1G compatible with MPSA92G circuit designs?
A: MMBTA92LT1G maintains identical electrical specifications but uses SOT-23-3 surface mount packaging instead of TO-92-3 through-hole packaging. Circuit designs must be modified to accommodate surface mount assembly. Power dissipation is reduced to 300 mW due to package thermal limitations. Electrical performance is equivalent for the specified operating conditions.
Q: Can ZTX958 be used in applications designed for MPSA92G?
A: Yes. ZTX958 exceeds MPSA92G specifications with 400 V breakdown voltage, 1.2 W power dissipation, and 85 MHz transition frequency. The E-Line-3 package is mechanically compatible with TO-92 footprints. ZTX958 is suitable for applications where MPSA92G specifications represent minimum requirements. Higher current gain (hFE Min = 100 at 500 mA) may require circuit bias adjustments in some designs.
Q: What is the operating temperature range for substitute parts?
A: MPSA92 PBFREE operates from -65°C to 150°C. KSP92BU, ZTX757STZ, ZTX758STZ, and ZTX958 operate from -55°C to 200°C. MMBTA92LT1G operates from -55°C to 150°C. Verify operating temperature requirements for your specific application.
Q: Are all substitute parts RoHS compliant?
A: KSP92BU does not specify RoHS status. MPSA92 PBFREE, 2N6520TA, ZTX757STZ, ZTX758STZ, ZTX958, and MMBTA92LT1G are ROHS3 compliant. Verify RoHS compliance requirements for your application and supply chain.
Q: What packaging options are available for MPSA92G substitutes?
A: Through-hole TO-92-3 packages are available from KSP92BU, MPSA92 PBFREE, 2N6520TA, ZTX757STZ, ZTX758STZ, and ZTX958. Surface mount SOT-23-3 packaging is available from MMBTA92LT1G. Select packaging based on assembly technology and board layout requirements.
Q: Can 2N6520TA be used in MPSA92G applications?
A: Yes. 2N6520TA provides 350 V breakdown voltage (exceeding 300 V requirement), 500 mA collector current, and 625 mW power dissipation. Transition frequency is 200 MHz, significantly higher than MPSA92G. TO-92-3 through-hole packaging is compatible. 2N6520TA is suitable for applications where higher frequency performance is beneficial or required.
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