MPSA64RLRAG Equivalent & Substitute Parts

Part Overview

The MPSA64RLRAG is a PNP Darlington bipolar junction transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. This device features a maximum collector current of 500 mA, collector-emitter breakdown voltage of 30 V, and operates across a temperature range of -55°C to 150°C. The component is packaged in a Through Hole TO-92 (TO-226-3) configuration with formed leads.

The MPSA64RLRAG is classified as an obsolete product. Identification of equivalent and substitute parts is necessary to support ongoing maintenance, repair, and redesign activities for legacy systems and applications currently utilizing this component.

Substiute Parts

MPSA64RLRAG
onsemiIn Stock: 991MPSA64RLRAG Datasheet
MPSA64RLRAG
Current Part
MMBTA64LT1G
onsemiIn Stock: 23209MMBTA64LT1G Datasheet
MMBTA64LT1G
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Key Parameters

Parameter Value Unit
Transistor Type PNP - Darlington
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 30 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100µA, 100mA V
Current - Collector Cutoff (Max) 100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA, 5V
Power - Max 625 mW
Frequency - Transition 125 MHz
Operating Temperature -55 to 150 °C
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body

Substitute Part Grouping Explanation

Substitution of the MPSA64RLRAG is determined by electrical and mechanical parameter equivalence. The critical parameters that define substitutability are:

  • Transistor Type: PNP - Darlington configuration
  • Current Rating: Maximum collector current of 500 mA
  • Voltage Rating: Collector-emitter breakdown voltage of 30 V
  • Saturation Characteristics: Vce saturation of 1.5V @ 100µA, 100mA
  • Current Gain: DC current gain (hFE) minimum of 20000 @ 100mA, 5V
  • Frequency Response: Transition frequency of 125 MHz
  • Temperature Range: Operating temperature from -55°C to 150°C
  • Cutoff Current: Collector cutoff current (ICBO) maximum of 100 nA

Substitute parts must maintain electrical equivalence across all specified parameters. Mounting type and package configuration may differ based on application requirements and PCB design constraints. The MMBTA64LT1G meets all electrical specifications while offering an alternative surface-mount package option.

Parameter Comparison

Parameter MPSA64RLRAG MMBTA64LT1G Unit
Manufacturer onsemi onsemi
Transistor Type PNP - Darlington PNP - Darlington
Current - Collector (Ic) (Max) 500 500 mA
Voltage - Collector Emitter Breakdown (Max) 30 30 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100µA, 100mA 1.5V @ 100µA, 100mA V
Current - Collector Cutoff (Max) 100 100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA, 5V 20000 @ 100mA, 5V
Frequency - Transition 125 125 MHz
Operating Temperature -55 to 150 -55 to 150 °C
Mounting Type Through Hole Surface Mount
Package / Case TO-226-3, TO-92-3 TO-236-3, SC-59, SOT-23-3
Power - Max 625 225 mW
Product Status Obsolete Active

Engineering Selection Recommendations

The MMBTA64LT1G is electrically equivalent to the MPSA64RLRAG across all critical electrical parameters: collector current, breakdown voltage, saturation characteristics, current gain, and frequency response. Both devices are manufactured by onsemi and operate within the same temperature range.

The primary distinction between these parts is the mounting technology and package configuration. The MPSA64RLRAG utilizes Through Hole TO-92 packaging, while the MMBTA64LT1G employs Surface Mount SOT-23-3 packaging. This difference necessitates PCB redesign considerations.

The MMBTA64LT1G carries Active product status, ensuring continued availability and manufacturing support. The MPSA64RLRAG is classified as Obsolete, making the MMBTA64LT1G the preferred selection for new designs and long-term supply chain continuity.

Both devices are REACH Unaffected and classified under ECCN EAR99. The MMBTA64LT1G is RoHS3 Compliant. Moisture sensitivity level for both parts is MSL 1 (Unlimited).

Frequently Asked Questions (FAQ)

Q: Can the MMBTA64LT1G directly replace the MPSA64RLRAG in existing through-hole applications?

A: The MMBTA64LT1G cannot be directly installed in through-hole PCB designs due to its surface-mount SOT-23-3 package. PCB redesign is required to accommodate the different lead configuration and mounting method. However, electrical performance is fully equivalent.

Q: What are the key electrical parameters that must match for substitution?

A: Substitution requires equivalence in transistor type (PNP - Darlington), maximum collector current (500 mA), collector-emitter breakdown voltage (30 V), saturation voltage (1.5V @ 100µA, 100mA), DC current gain (20000 @ 100mA, 5V), transition frequency (125 MHz), and operating temperature range (-55°C to 150°C).

Q: Why is the maximum power rating different between these parts?

A: The MPSA64RLRAG has a maximum power rating of 625 mW in TO-92 packaging, while the MMBTA64LT1G has a maximum power rating of 225 mW in SOT-23-3 packaging. This difference reflects the thermal dissipation characteristics of each package type, not a difference in electrical capability. Both devices maintain identical electrical specifications for current, voltage, and gain parameters.

Q: Is the MMBTA64LT1G suitable for new design applications?

A: Yes. The MMBTA64LT1G carries Active product status and is manufactured by onsemi. It is suitable for new designs and provides long-term supply chain availability. The MPSA64RLRAG is Obsolete and should not be specified for new applications.

Q: What compliance certifications apply to both parts?

A: Both the MPSA64RLRAG and MMBTA64LT1G are REACH Unaffected and classified under ECCN EAR99. The MMBTA64LT1G is additionally RoHS3 Compliant. Both devices have Moisture Sensitivity Level 1 (Unlimited).

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