MPSA63RLRAG Equivalent & Substitute Parts

Part Overview

The MPSA63RLRAG is a PNP Darlington bipolar junction transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. This device features a maximum collector current of 500 mA, collector-emitter breakdown voltage of 30 V, and operates across a temperature range of -55°C to 150°C. The component is packaged in a through-hole TO-92 (TO-226-3) configuration with formed leads.

The MPSA63RLRAG is classified as an obsolete product. Identifying equivalent and substitute parts is necessary to support ongoing maintenance, repair, and redesign efforts for legacy systems and applications currently utilizing this component.

Substiute Parts

MPSA63RLRAG
onsemiIn Stock: 745MPSA63RLRAG Datasheet
MPSA63RLRAG
Current Part
MMBTA63LT1G
onsemiIn Stock: 152698MMBTA63LT1G Datasheet
MMBTA63LT1G
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Key Parameters

Parameter Value
Transistor Type PNP - Darlington
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 30 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA, 5V
Power - Max 625 mW
Frequency - Transition 125MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the MPSA63RLRAG are identified based on electrical and mechanical compatibility within the constraints of this product category. The following parameters establish the substitution criteria:

Electrical Compatibility Parameters:

  • Transistor Type: PNP - Darlington configuration
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 125MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)

Mechanical Compatibility Parameters:

  • Mounting Type: Through Hole or Surface Mount
  • Package / Case: TO-92-3 or equivalent footprint

Substitute parts must maintain electrical equivalence across all specified parameters. Variations in packaging type (through-hole to surface-mount conversion) are permissible when electrical characteristics remain within specification.

Parameter Comparison

Parameter MPSA63RLRAG MMBTA63LT1G
Manufacturer onsemi onsemi
Transistor Type PNP - Darlington PNP - Darlington
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100µA, 100mA 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
Frequency - Transition 125MHz 125MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads) TO-236-3, SC-59, SOT-23-3
Power - Max 625 mW 225 mW
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA, 5V 5000 @ 100mA, 5V
Product Status Obsolete Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

The MMBTA63LT1G serves as an electrical equivalent to the MPSA63RLRAG with the following considerations:

Electrical Equivalence: The MMBTA63LT1G maintains all critical electrical parameters including collector current rating (500 mA), breakdown voltage (30 V), saturation voltage (1.5V @ 100µA, 100mA), cutoff current (100nA), and transition frequency (125MHz). Operating temperature range is identical (-55°C ~ 150°C).

DC Current Gain Variance: The MMBTA63LT1G specifies a minimum DC current gain (hFE) of 5000 @ 100mA, 5V, compared to 10000 for the MPSA63RLRAG. This represents a 50% reduction in gain specification and must be evaluated against circuit design requirements.

Power Dissipation Difference: The MMBTA63LT1G is rated for 225 mW maximum power dissipation, compared to 625 mW for the MPSA63RLRAG. Applications requiring sustained power dissipation near or exceeding 225 mW require thermal analysis and potential circuit redesign.

Package and Mounting: The MMBTA63LT1G is a surface-mount device in SOT-23-3 (TO-236) packaging, whereas the MPSA63RLRAG is a through-hole TO-92 component. PCB layout and assembly process modifications are required for substitution.

Product Status and Availability: The MMBTA63LT1G is classified as an active product with significantly higher inventory availability (152,660 pieces) compared to the obsolete MPSA63RLRAG (722 pieces). The MMBTA63LT1G is RoHS3 compliant, supporting modern manufacturing and environmental compliance requirements.

Compliance: Both components are REACH Unaffected and classified under ECCN EAR99 and HTSUS 8541.21.0075.

Frequently Asked Questions (FAQ)

Q: Can the MMBTA63LT1G directly replace the MPSA63RLRAG in existing through-hole PCB designs?

A: Direct PCB replacement is not possible without layout modification. The MPSA63RLRAG uses through-hole TO-92 packaging with formed leads, while the MMBTA63LT1G is a surface-mount SOT-23-3 device. Adapter boards or PCB redesign is required for substitution.

Q: What is the significance of the DC current gain (hFE) difference between these parts?

A: The MPSA63RLRAG specifies a minimum hFE of 10000, while the MMBTA63LT1G specifies 5000. In circuits designed for the higher gain specification, the lower gain of the MMBTA63LT1G may result in reduced switching speed or amplification performance. Circuit analysis is necessary to determine if the lower gain is acceptable for the intended application.

Q: Are there thermal considerations when substituting the MMBTA63LT1G for the MPSA63RLRAG?

A: Yes. The MMBTA63LT1G has a maximum power dissipation rating of 225 mW compared to 625 mW for the MPSA63RLRAG. Applications operating near the upper power limit of the MPSA63RLRAG may exceed the thermal capability of the MMBTA63LT1G. Thermal analysis and potential circuit modifications may be required.

Q: Are both parts compliant with current environmental and regulatory standards?

A: The MMBTA63LT1G is RoHS3 compliant. The MPSA63RLRAG does not specify RoHS compliance status. Both components are REACH Unaffected. For new designs and manufacturing environments requiring RoHS compliance, the MMBTA63LT1G is the appropriate selection.

Q: What is the inventory status of these components?

A: The MPSA63RLRAG is an obsolete product with limited inventory (722 pieces). The MMBTA63LT1G is an active product with substantially higher availability (152,660 pieces), making it the preferred choice for ongoing production and long-term supply chain stability.

Q: Do both components operate across the same temperature range?

A: Yes. Both the MPSA63RLRAG and MMBTA63LT1G operate across the identical temperature range of -55°C to 150°C (TJ), ensuring thermal compatibility in temperature-sensitive applications.

Q: What are the electrical parameters that must match for substitution?

A: Critical matching parameters include transistor type (PNP - Darlington), maximum collector current (500 mA), collector-emitter breakdown voltage (30 V), saturation voltage (1.5V @ 100µA, 100mA), cutoff current (100nA), and transition frequency (125MHz). Both parts meet these specifications.

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