MPSA29G Equivalent & Substitute Parts

Part Overview

The MPSA29G is an NPN Darlington bipolar junction transistor manufactured by onsemi, designed for through-hole applications in the TO-92 package. This device is rated for 100 V collector-emitter breakdown voltage and 500 mA maximum collector current, with a maximum power dissipation of 625 mW. The MPSA29G is classified as obsolete, making identification of suitable substitute components necessary for ongoing design support and production continuity. The MPSA29 series provides direct alternatives with compatible electrical and mechanical characteristics.

Substiute Parts

MPSA29G
onsemiIn Stock: 2971MPSA29G Datasheet
MPSA29G
Current Part
MPSA29
onsemiIn Stock: 2930MPSA29 Datasheet
MPSA29
Similar

Key Parameters

Parameter Value Unit
Transistor Type NPN - Darlington
Voltage - Collector Emitter Breakdown (Max) 100 V
Current - Collector (Ic) (Max) 500 mA
Power - Max 625 mW
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA, 5V
Vce Saturation (Max) @ Ib, Ic 1.5 V @ 100µA, 100mA
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Through Hole
Package / Case TO-92-3, TO-226-3

Substitute Part Grouping Explanation

Substitution of the MPSA29G with the MPSA29 is based on the following criteria:

Electrical Compatibility Parameters:

  • Transistor type: Both are NPN Darlington devices
  • Voltage rating: Both rated at 100 V collector-emitter breakdown
  • DC current gain: Both maintain 10000 hFE minimum at 100 mA, 5 V
  • Vce saturation: Both specified at 1.5 V maximum
  • Current-collector cutoff: Both rated at 500 nA maximum
  • Power dissipation: Both rated at 625 mW maximum
  • Operating temperature range: Both operate from -55°C to 150°C

Mechanical Compatibility Parameters:

  • Mounting type: Both are through-hole devices
  • Package designation: Both use TO-92-3 and TO-226-3 packages

Key Differentiator: The MPSA29 accepts a higher maximum collector current of 800 mA compared to the MPSA29G at 500 mA. This represents an upward-compatible substitution where the MPSA29 can operate within all electrical constraints of the MPSA29G application while providing additional current capacity.

Parameter Comparison

Parameter MPSA29G MPSA29 Unit
Manufacturer onsemi onsemi
Product Status Obsolete Active
Transistor Type NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 500 800 mA
Voltage - Collector Emitter Breakdown (Max) 100 100 V
Vce Saturation (Max) @ Ib, Ic 1.5 @ 100µA, 100mA 1.5 @ 100µA, 100mA V
Current - Collector Cutoff (Max) 500 500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA, 5V 10000 @ 100mA, 5V
Power - Max 625 625 mW
Frequency - Transition 200 125 MHz
Operating Temperature -55 to 150 -55 to 150 °C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-92-3, TO-226-3 TO-92-3, TO-226-3
REACH Status REACH Unaffected REACH Unaffected
ECCN EAR99 EAR99

Engineering Selection Recommendations

The MPSA29 is the direct substitute for the obsolete MPSA29G. Both devices share identical electrical specifications for voltage, saturation characteristics, current gain, and power dissipation. The MPSA29 is manufactured by onsemi with active product status, ensuring ongoing availability and supply chain continuity.

The MPSA29 accommodates higher collector current (800 mA versus 500 mA), making it suitable for applications currently using the MPSA29G without circuit modification. The transition frequency specification differs (125 MHz for MPSA29 versus 200 MHz for MPSA29G); applications requiring the higher frequency performance of the MPSA29G should evaluate this parameter against actual circuit requirements.

Both devices maintain identical mechanical compatibility through the TO-92-3 package and identical regulatory compliance (REACH Unaffected, EAR99 classification). The MPSA29 carries RoHS3 compliance certification, providing additional environmental compliance assurance for new designs.

Frequently Asked Questions (FAQ)

Q: Can the MPSA29 directly replace the MPSA29G in existing circuits?

A: Yes. The MPSA29 maintains all critical electrical parameters: 100 V breakdown voltage, 1.5 V saturation voltage, 10000 hFE minimum gain, and 625 mW power rating. The higher current rating (800 mA) does not prevent substitution in applications designed for 500 mA operation.

Q: What is the significance of the different transition frequencies?

A: The MPSA29G specifies 200 MHz transition frequency while the MPSA29 specifies 125 MHz. For applications operating below 125 MHz, both devices perform identically. Applications requiring operation above 125 MHz should verify the MPSA29 meets frequency requirements before substitution.

Q: Are the packages physically identical?

A: Yes. Both the MPSA29G and MPSA29 use the TO-92-3 package (also designated TO-226-3). Pin configuration and physical dimensions are identical, allowing direct board-level substitution without layout modification.

Q: What is the product status difference, and why does it matter?

A: The MPSA29G is classified as obsolete, indicating onsemi no longer manufactures this variant. The MPSA29 maintains active product status with ongoing manufacturing and supply availability. For new designs and production continuity, the MPSA29 is the recommended selection.

Q: Are there compliance differences between the two parts?

A: Both devices carry REACH Unaffected and EAR99 classifications. The MPSA29 additionally carries RoHS3 compliance certification. For applications requiring RoHS compliance, the MPSA29 provides documented environmental compliance.

Q: Can the MPSA29 be used in high-frequency switching applications?

A: The MPSA29 transition frequency of 125 MHz supports switching applications within this frequency range. Applications requiring higher frequency performance should evaluate whether 125 MHz meets circuit specifications or consider alternative device families.

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