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MPSA13RLRM Equivalent & Substitute Parts
Part Overview
The MPSA13RLRM is an NPN Darlington bipolar junction transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. This device features a maximum collector current of 500 mA, collector-emitter breakdown voltage of 30 V, and maximum power dissipation of 625 mW in a Through Hole TO-92 package.
The MPSA13RLRM is classified as obsolete. Identification of equivalent and substitute parts is necessary to support ongoing production requirements, maintenance operations, and design continuity where this component is specified in existing applications.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN - Darlington | — |
| Current - Collector (Ic) (Max) | 500 | mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 | V |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 100µA, 100mA | — |
| Current - Collector Cutoff (Max) | 100 | nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 100mA, 5V | — |
| Power - Max | 625 | mW |
| Frequency - Transition | 125 | MHz |
| Operating Temperature Range | -55 to 150 | °C |
| Mounting Type | Through Hole | — |
| Package / Case | TO-92-3 | — |
Substitute Part Grouping Explanation
Substitution of the MPSA13RLRM is determined by electrical and mechanical parameter equivalence within the NPN Darlington transistor category. The following parameters establish substitution validity:
Electrical Parameters (Critical):
- Transistor Type: NPN - Darlington configuration
- Maximum Collector Current (Ic): 500 mA
- Collector-Emitter Breakdown Voltage: 30 V
- Saturation Voltage (Vce): 1.5V @ 100µA, 100mA
- Collector Cutoff Current (ICBO): 100 nA
- DC Current Gain (hFE): 10000 @ 100mA, 5V
- Maximum Power Dissipation: 625 mW
- Transition Frequency: 125 MHz
Mechanical Parameters (Critical):
- Mounting Type: Through Hole
- Package: TO-92-3 (TO-226 series)
The KSP13TA meets all specified electrical and mechanical parameters and is therefore classified as a direct substitute for the MPSA13RLRM.
Parameter Comparison
| Parameter | MPSA13RLRM | KSP13TA | Match |
|---|---|---|---|
| Transistor Type | NPN - Darlington | NPN - Darlington | ✓ |
| Current - Collector (Ic) (Max) | 500 mA | 500 mA | ✓ |
| Voltage - Collector Emitter Breakdown (Max) | 30 V | 30 V | ✓ |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 100µA, 100mA | 1.5V @ 100µA, 100mA | ✓ |
| Current - Collector Cutoff (Max) | 100 nA | 100 nA | ✓ |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 100mA, 5V | 10000 @ 100mA, 5V | ✓ |
| Power - Max | 625 mW | 625 mW | ✓ |
| Frequency - Transition | 125 MHz | 125 MHz | ✓ |
| Mounting Type | Through Hole | Through Hole | ✓ |
| Package / Case | TO-92-3 | TO-92-3 | ✓ |
| Product Status | Obsolete | Active | — |
| RoHS Status | Non-compliant | ROHS3 Compliant | — |
Engineering Selection Recommendations
The KSP13TA is a direct electrical and mechanical equivalent to the MPSA13RLRM. All critical electrical parameters—collector current, breakdown voltage, saturation voltage, current gain, power dissipation, and transition frequency—are identical. Both devices utilize the Through Hole TO-92-3 package, ensuring mechanical compatibility in existing PCB layouts.
The MPSA13RLRM is classified as obsolete, whereas the KSP13TA maintains active product status with current manufacturing availability. The KSP13TA additionally carries ROHS3 compliance certification, meeting modern regulatory requirements for new designs and production runs.
Selection of the KSP13TA over the MPSA13RLRM is supported by product availability, active manufacturing status, and regulatory compliance alignment with current industry standards.
Frequently Asked Questions (FAQ)
Q: Can the KSP13TA be used as a direct replacement for the MPSA13RLRM in existing designs?
A: Yes. The KSP13TA is electrically and mechanically equivalent to the MPSA13RLRM. All electrical parameters—maximum collector current, breakdown voltage, saturation voltage, current gain, power dissipation, and transition frequency—are identical. Both devices are packaged in the Through Hole TO-92-3 configuration, ensuring compatibility with existing PCB layouts and circuit designs without modification.
Q: What is the primary advantage of selecting the KSP13TA over the MPSA13RLRM?
A: The MPSA13RLRM is classified as obsolete with no active manufacturing. The KSP13TA is an active product with current manufacturing availability. Additionally, the KSP13TA carries ROHS3 compliance certification, meeting regulatory requirements for new production and designs subject to environmental compliance standards.
Q: Are there any package or pinout differences between these devices?
A: No. Both the MPSA13RLRM and KSP13TA utilize the Through Hole TO-92-3 package with identical pinout configuration. No PCB layout modifications or design changes are required for substitution.
Q: Do the electrical characteristics differ between these transistors?
A: No. The electrical characteristics are identical across all specified parameters: maximum collector current (500 mA), collector-emitter breakdown voltage (30 V), saturation voltage (1.5V @ 100µA, 100mA), collector cutoff current (100 nA), DC current gain (10000 @ 100mA, 5V), maximum power dissipation (625 mW), and transition frequency (125 MHz).
Q: What is the operating temperature range for the KSP13TA?
A: The KSP13TA operates across a maximum junction temperature of 150°C. The MPSA13RLRM specifies an operating range of -55°C to 150°C. Verify application-specific temperature requirements against the KSP13TA datasheet for low-temperature operation below ambient conditions.
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