MPS8098 Equivalent & Substitute Parts

Part Overview

The MPS8098 is an NPN bipolar junction transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. It features a 60 V collector-emitter breakdown voltage rating, 500 mA maximum collector current, and 625 mW power dissipation capability in a through-hole TO-92 package. The device operates across a temperature range of -55°C to 150°C and achieves 150 MHz transition frequency.

The MPS8098 is classified as obsolete. Locating equivalent or substitute components is necessary for new designs, production continuity, and long-term system support where through-hole or surface-mount alternatives are required.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	60	V
Current - Collector (Ic) (Max)	500	mA
Power - Max	625	mW
Frequency - Transition	150	MHz
DC Current Gain (hFE) (Min)	100	@ 1mA, 5V
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package / Case	TO-92-3	—

Substitute Part Grouping Explanation

Substitution of the MPS8098 is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

Transistor type must be NPN
Collector-emitter breakdown voltage must equal or exceed 60 V
Maximum collector current must equal or exceed 500 mA
Maximum power dissipation must equal or exceed 625 mW
DC current gain (hFE) must meet or exceed 100 at specified test conditions
Operating temperature range must encompass -55°C to 150°C

Mechanical Compatibility Criteria:

Package type determines mounting method (through-hole vs. surface-mount)
Pin configuration must support direct or adapter-based substitution

The MMBT100 is identified as a substitute part. While it operates as an NPN transistor with matching collector current (500 mA) and temperature range (-55°C to 150°C), it exhibits reduced voltage rating (45 V vs. 60 V) and power dissipation (350 mW vs. 625 mW). The MMBT100 employs surface-mount SOT-23-3 packaging, requiring circuit board redesign or adapter implementation for direct replacement in through-hole applications.

Parameter Comparison

Parameter	MPS8098	MMBT100	Unit
Transistor Type	NPN	NPN	—
Voltage - Collector Emitter Breakdown (Max)	60	45	V
Current - Collector (Ic) (Max)	500	500	mA
Power - Max	625	350	mW
Frequency - Transition	150	250	MHz
DC Current Gain (hFE) (Min)	100 @ 1mA, 5V	100 @ 150mA, 5V	—
Operating Temperature Range	-55 to 150	-55 to 150	°C
Mounting Type	Through Hole	Surface Mount	—
Package / Case	TO-92-3	SOT-23-3	—
Product Status	Obsolete	Active	—
RoHS Status	Non-compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

Product Status Consideration: The MPS8098 is obsolete, while the MMBT100 is active and in production. Active status ensures ongoing availability and manufacturing support.

Compliance and Certification: The MMBT100 is ROHS3 compliant, whereas the MPS8098 is non-compliant. For applications subject to RoHS regulations, the MMBT100 satisfies compliance requirements.

Electrical Derating: The MMBT100 operates at reduced voltage (45 V) and power (350 mW) ratings compared to the MPS8098 (60 V, 625 mW). Circuit designs operating near the MPS8098 maximum ratings require verification that the MMBT100 derating does not violate application requirements.

Packaging and Integration: The MMBT100 surface-mount SOT-23-3 package requires PCB redesign or adapter circuitry for integration into through-hole MPS8098 applications. Through-hole designs must evaluate the cost and feasibility of board modification.

Frequency Performance: The MMBT100 provides superior transition frequency (250 MHz vs. 150 MHz), supporting higher-speed switching applications without performance degradation.

Frequently Asked Questions (FAQ)

Q: Can the MMBT100 directly replace the MPS8098 in existing through-hole circuit boards?

A: Direct replacement is not possible without modification. The MPS8098 uses TO-92-3 through-hole packaging, while the MMBT100 uses SOT-23-3 surface-mount packaging. Adapter boards or PCB redesign is required for integration.

Q: What are the voltage rating implications of substituting the MMBT100 for the MPS8098?

A: The MMBT100 has a maximum collector-emitter breakdown voltage of 45 V, compared to 60 V for the MPS8098. Applications operating at voltages between 45 V and 60 V require circuit redesign or alternative component selection to maintain design margins.

Q: Is the MMBT100 suitable for applications requiring 625 mW power dissipation?

A: No. The MMBT100 maximum power dissipation is 350 mW. Applications requiring sustained power dissipation above 350 mW must use alternative components or implement thermal management modifications.

Q: Does the MMBT100 meet RoHS compliance requirements?

A: Yes. The MMBT100 is ROHS3 compliant. The MPS8098 is non-compliant. For applications subject to RoHS regulations, the MMBT100 satisfies regulatory requirements.

Q: Are the DC current gain specifications equivalent between the MPS8098 and MMBT100?

A: Both devices specify a minimum DC current gain (hFE) of 100, but at different test conditions. The MPS8098 is tested at 1 mA collector current and 5 V collector-emitter voltage, while the MMBT100 is tested at 150 mA and 5 V. Gain characteristics at specific operating points may differ; circuit designs dependent on gain linearity across current ranges require detailed datasheet analysis.

Q: What is the advantage of the MMBT100 transition frequency over the MPS8098?

A: The MMBT100 achieves 250 MHz transition frequency compared to 150 MHz for the MPS8098. This higher frequency capability supports faster switching applications and higher-frequency signal processing without performance loss.

Q: Are there alternative through-hole NPN transistors with 60 V ratings available as substitutes?

A: The provided substitute list contains only the MMBT100. Additional through-hole alternatives with 60 V ratings are not included in this reference.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message