MPS751 Equivalent & Substitute Parts

Part Overview

The MPS751 is an active PNP bipolar junction transistor (BJT) manufactured by onsemi, rated for 60 V collector-emitter breakdown voltage and 2 A maximum collector current. The device is packaged in a TO-92-3 through-hole configuration and operates at a maximum junction temperature of 150°C. This transistor is suitable for general-purpose switching and amplification applications requiring moderate current and voltage ratings.

Finding equivalent and substitute parts is necessary to address supply chain continuity, procurement flexibility, and design standardization across manufacturing facilities or product revisions.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Current - Collector (Ic) (Max)	2	A
Voltage - Collector Emitter Breakdown (Max)	60	V
Vce Saturation (Max) @ Ib, Ic	500 mV @ 200 mA, 2 A	—
Current - Collector Cutoff (Max)	100	nA
DC Current Gain (hFE) (Min) @ Ic, Vce	75 @ 1 A, 2 V	—
Power - Max	625	mW
Frequency - Transition	75	MHz
Operating Temperature (TJ)	150	°C
Mounting Type	Through Hole	—
Package / Case	TO-92-3 (TO-226AA)	—

Substitute Part Grouping Explanation

Substitution of the MPS751 is determined by strict equivalence across the following electrical and mechanical parameters:

Electrical Criteria:

Transistor polarity: PNP
Maximum collector current: 2 A
Maximum collector-emitter breakdown voltage: 60 V
Saturation voltage: 500 mV @ 200 mA, 2 A
Collector cutoff current: 100 nA (ICBO)
Minimum DC current gain: 75 @ 1 A, 2 V
Maximum power dissipation: 625 mW
Transition frequency: 75 MHz
Maximum junction temperature: 150°C

Mechanical Criteria:

Mounting type: Through Hole
Package designation: TO-92-3 (TO-226AA)

Substitute parts must match all listed electrical parameters and the through-hole TO-92-3 package configuration to ensure direct functional and mechanical compatibility without circuit redesign or board layout modification.

Parameter Comparison

Parameter	MPS751 (onsemi)	MPS751 (Fairchild Semiconductor)
Transistor Type	PNP	PNP
Current - Collector (Ic) (Max)	2 A	2 A
Voltage - Collector Emitter Breakdown (Max)	60 V	60 V
Vce Saturation (Max) @ Ib, Ic	500 mV @ 200 mA, 2 A	500 mV @ 200 mA, 2 A
Current - Collector Cutoff (Max)	100 nA	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	75 @ 1 A, 2 V	75 @ 1 A, 2 V
Power - Max	625 mW	625 mW
Frequency - Transition	75 MHz	75 MHz
Operating Temperature (TJ)	150°C	150°C
Mounting Type	Through Hole	Through Hole
Package / Case	TO-92-3	TO-92-3

Engineering Selection Recommendations

The MPS751 manufactured by Fairchild Semiconductor is a parametric equivalent to the onsemi MPS751. Both devices are active products with identical electrical specifications and package configurations.

Selection between the onsemi and Fairchild Semiconductor versions is based on:

Product Status: Both manufacturers list the MPS751 as an active product, ensuring continued availability and support.

Compliance and Certifications: The onsemi MPS751 carries RoHS3 compliance and REACH Unaffected status. The Fairchild Semiconductor version maintains EAR99 export classification. Both devices are suitable for applications requiring regulatory compliance in standard industrial and commercial environments.

Inventory and Supply: Selection may be influenced by current inventory levels, lead times, and procurement agreements with authorized distributors.

No additional technical evaluation is required for direct substitution when electrical and mechanical parameters are identical.

Frequently Asked Questions (FAQ)

Q: Can the Fairchild Semiconductor MPS751 replace the onsemi MPS751 in an existing design?

A: Yes. Both devices are parametric equivalents with identical electrical specifications (2 A collector current, 60 V breakdown voltage, 75 MHz transition frequency, 625 mW power rating) and the same TO-92-3 through-hole package. No circuit modification or board layout change is required.

Q: What are the critical parameters that define substitution eligibility for the MPS751?

A: Substitution is determined by matching the following parameters: PNP polarity, 2 A maximum collector current, 60 V collector-emitter breakdown voltage, 500 mV saturation voltage at specified bias conditions, 75 MHz transition frequency, 625 mW power dissipation, and TO-92-3 package configuration. Any deviation in these parameters disqualifies a part from direct substitution.

Q: Are there differences in compliance or regulatory status between the onsemi and Fairchild Semiconductor versions?

A: The onsemi MPS751 is RoHS3 compliant and REACH Unaffected. The Fairchild Semiconductor version carries EAR99 export classification. Both are suitable for standard industrial applications. Compliance requirements should be verified against specific end-use application regulations.

Q: Does the TO-92-3 package designation ensure mechanical compatibility?

A: Yes. Both the onsemi and Fairchild Semiconductor MPS751 use the TO-92-3 (TO-226AA) through-hole package. Pin configuration, lead spacing, and mounting hole requirements are identical, allowing direct board-level substitution without layout modification.

Q: What is the significance of the 75 MHz transition frequency specification?

A: The transition frequency (fT) defines the maximum frequency at which the transistor maintains useful current gain. At 75 MHz, the MPS751 is suitable for general-purpose switching and low-frequency amplification applications. This parameter must be matched in substitute parts to ensure equivalent performance in frequency-dependent circuits.

Q: Can the MPS751 be used in high-temperature applications?

A: The MPS751 is rated for a maximum junction temperature of 150°C. Applications requiring operation above this temperature require alternative devices with higher temperature ratings. Thermal management and ambient temperature conditions must be evaluated to ensure the junction temperature remains within specification.

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