MPS6717G Equivalent & Substitute Parts

Part Overview

The MPS6717G is an NPN bipolar junction transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. This device features a maximum collector current of 500 mA, collector-emitter breakdown voltage of 80 V, and maximum power dissipation of 1 W in a Through Hole TO-92 package. The MPS6717G is classified as obsolete, making identification of functionally equivalent substitute components necessary for ongoing design support, maintenance, and production continuity.

Substiute Parts

MPS6717G
onsemiIn Stock: 1206MPS6717G Datasheet
MPS6717G
Current Part
BC849CLT1G
onsemiIn Stock: 33116BC849CLT1G Datasheet
BC849CLT1G
Direct

Key Parameters

Parameter Value Unit
Transistor Type NPN
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 250mA V
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 250mA, 1V
Power - Max 1 W
Operating Temperature Range -55 to 150 °C
Mounting Type Through Hole
Package / Case TO-92-3

Substitute Part Grouping Explanation

Substitution of the MPS6717G requires evaluation against the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

  • Transistor polarity must be NPN
  • Maximum collector current (Ic) must equal or exceed 500 mA
  • Collector-emitter breakdown voltage (VCEO) must equal or exceed 80 V
  • Operating temperature range must encompass -55°C to 150°C
  • DC current gain (hFE) characteristics must support the intended application bias point

Mechanical Compatibility Criteria:

  • Package type and pin configuration must be compatible with existing PCB layouts
  • Mounting technology (Through Hole vs. Surface Mount) affects assembly compatibility

The BC849CLT1G is listed as a substitute part in the provided data. However, this device exhibits significant electrical parameter deviations that require careful evaluation:

  • Maximum collector current: 100 mA (versus 500 mA required)
  • Collector-emitter breakdown voltage: 30 V (versus 80 V required)
  • Maximum power dissipation: 300 mW (versus 1 W required)
  • Package type: Surface Mount SOT-23-3 (versus Through Hole TO-92)

These differences indicate the BC849CLT1G operates within a substantially reduced electrical envelope and different physical form factor.

Parameter Comparison

Parameter MPS6717G BC849CLT1G Unit
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 500 100 mA
Voltage - Collector Emitter Breakdown (Max) 80 30 V
Power - Max 1 0.3 W
Operating Temperature Range -55 to 150 -55 to 150 °C
Mounting Type Through Hole Surface Mount
Package / Case TO-92-3 SOT-23-3
Product Status Obsolete Active

Engineering Selection Recommendations

Product Status Consideration: The MPS6717G is classified as obsolete, while the BC849CLT1G maintains active product status with onsemi. Active status provides access to current manufacturing, quality assurance, and technical support resources.

Compliance and Certification: Both devices operate within the -55°C to 150°C temperature range. The BC849CLT1G carries RoHS3 compliance certification, whereas the MPS6717G compliance status is not specified in the provided data. Both devices are REACH Unaffected and classified under ECCN EAR99.

Application-Specific Evaluation: Selection between these devices must be based on circuit requirements. The MPS6717G supports higher collector current (500 mA), higher breakdown voltage (80 V), and greater power dissipation (1 W). The BC849CLT1G operates within reduced electrical limits (100 mA, 30 V, 300 mW) and requires surface mount assembly compatibility.

Direct substitution is not recommended without circuit redesign verification, as the BC849CLT1G does not meet the electrical specifications of the MPS6717G.

Frequently Asked Questions (FAQ)

Q: Can the BC849CLT1G directly replace the MPS6717G in existing designs?

A: No. The BC849CLT1G has lower maximum ratings across all critical parameters: collector current (100 mA vs. 500 mA), breakdown voltage (30 V vs. 80 V), and power dissipation (300 mW vs. 1 W). Additionally, the BC849CLT1G uses Surface Mount SOT-23-3 packaging, while the MPS6717G uses Through Hole TO-92 packaging. Direct substitution requires circuit redesign and PCB layout modification.

Q: What are the key electrical differences between these devices?

A: The MPS6717G is rated for higher current handling (500 mA maximum), higher voltage operation (80 V breakdown), and greater power dissipation (1 W). The BC849CLT1G is a lower-power device suitable for signal-level applications with maximum ratings of 100 mA, 30 V, and 300 mW. These differences reflect different application categories.

Q: Are there packaging compatibility issues?

A: Yes. The MPS6717G uses Through Hole TO-92-3 packaging for PCB insertion mounting. The BC849CLT1G uses Surface Mount SOT-23-3 packaging. These require different assembly processes and PCB footprints. Existing Through Hole designs cannot accommodate Surface Mount components without PCB redesign.

Q: What is the significance of product status (Obsolete vs. Active)?

A: Obsolete status indicates the MPS6717G is no longer in active production. Active status for the BC849CLT1G means current manufacturing availability, ongoing quality control, and technical support from onsemi. For new designs or long-term production, active components provide supply chain stability.

Q: Can the BC849CLT1G be used in lower-power versions of MPS6717G applications?

A: The BC849CLT1G may be suitable only for applications where circuit requirements are reduced to 100 mA maximum collector current, 30 V maximum voltage, and 300 mW maximum power dissipation. This requires complete circuit analysis and redesign. The Surface Mount package also requires different assembly and PCB design.

Q: What compliance certifications apply to both devices?

A: Both devices are REACH Unaffected and classified under ECCN EAR99. The BC849CLT1G carries RoHS3 compliance. Both operate within the -55°C to 150°C temperature range. Compliance requirements for specific applications must be verified against end-use regulations.

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