MPS6652G PNP Bipolar Transistor Equivalent & Substitute Parts

Part Overview

The MPS6652G is a PNP bipolar junction transistor manufactured by onsemi, rated for 40 V collector-emitter breakdown voltage and 1 A maximum collector current. The device is packaged in TO-92 (TO-226-3) through-hole configuration with a maximum power dissipation of 625 mW and transition frequency of 100 MHz. The MPS6652G is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility within the specified parameter ranges while accommodating available product status and packaging options.

Key Parameters

Parameter	MPS6652G Value	Unit	Substitution Criticality
Transistor Type	PNP	-	Critical
Voltage - Collector Emitter Breakdown (Max)	40	V	Critical
Current - Collector (Ic) (Max)	1	A	Critical
Power - Max	625	mW	Critical
Frequency - Transition	100	MHz	Important
Operating Temperature Range	-55 to 150	°C	Important
Mounting Type	Through Hole	-	Important
Package / Case	TO-226-3, TO-92-3	-	Important
DC Current Gain (hFE) (Min)	50 @ 500mA, 1V	-	Important

Substitute Part Grouping Explanation

Substitution eligibility for the MPS6652G is determined by the following criteria:

Critical Parameters (Must Match or Exceed):

Transistor Type: PNP configuration required
Voltage - Collector Emitter Breakdown: Minimum 40 V
Current - Collector (Ic) (Max): Minimum 1 A
Power - Max: Minimum 625 mW
Mounting Type: Through Hole required

Important Parameters (Should Match or Exceed):

Frequency - Transition: 100 MHz or higher preferred
Operating Temperature Range: Must encompass -55°C to 150°C
Package / Case: TO-92-3 or TO-226-3 compatible form factors
DC Current Gain (hFE): Minimum 50 at specified operating points

Substitute parts are grouped into two categories based on voltage rating alignment:

Group 1 - 40 V Rated Devices: 2N3906BU, 2N4403BU, PN2907BU. These devices maintain the 40 V collector-emitter breakdown voltage specification of the MPS6652G.

Group 2 - 30 V Rated Devices: ZTX549, ZTX549STZ. These devices operate at 30 V collector-emitter breakdown voltage, representing a lower voltage rating that may be suitable for applications not requiring the full 40 V specification.

Parameter Comparison

Parameter	MPS6652G	2N3906BU	2N4403BU	PN2907BU	ZTX549	ZTX549STZ
Manufacturer	onsemi	Fairchild Semiconductor	Fairchild Semiconductor	Fairchild Semiconductor	Diodes Incorporated	Diodes Incorporated
Transistor Type	PNP	PNP	PNP	PNP	PNP	PNP
Voltage - Collector Emitter Breakdown (Max)	40 V	40 V	40 V	40 V	30 V	30 V
Current - Collector (Ic) (Max)	1 A	200 mA	600 mA	800 mA	1 A	1 A
Power - Max	625 mW	625 mW	625 mW	625 mW	1 W	1 W
Frequency - Transition	100 MHz	250 MHz	200 MHz	-	100 MHz	100 MHz
Operating Temperature Range	-55 to 150°C	-55 to 150°C	-55 to 150°C	-55 to 150°C	-55 to 200°C	-55 to 200°C
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3	TO-226-3, TO-92-3	TO-226-3, TO-92-3	TO-226-3, TO-92-3	E-Line-3	E-Line-3
Product Status	Obsolete	Active	Active	Active	Active	Active
DC Current Gain (hFE) (Min)	50 @ 500mA, 1V	100 @ 10mA, 1V	100 @ 150mA, 2V	100 @ 150mA, 10V	100 @ 500mA, 2V	100 @ 500mA, 2V

Engineering Selection Recommendations

Primary Substitutes (40 V Rated, Active Status):

2N4403BU and PN2907BU are the preferred substitutes for the MPS6652G. Both devices maintain the 40 V collector-emitter breakdown voltage specification and are classified as active products with ongoing manufacturer support. 2N4403BU supports 600 mA maximum collector current, while PN2907BU supports 800 mA, both approaching the 1 A specification of the MPS6652G. Both devices are available in TO-92-3 packaging compatible with the original MPS6652G footprint. The higher DC current gain (100 minimum) of these devices provides improved circuit performance compared to the MPS6652G specification of 50 minimum.

2N3906BU is an alternative 40 V rated substitute with active product status. This device is rated for 200 mA maximum collector current, which is lower than the MPS6652G 1 A specification. Selection of 2N3906BU is appropriate only for applications where collector current requirements do not exceed 200 mA.

Secondary Substitutes (30 V Rated, Active Status):

ZTX549 and ZTX549STZ are functionally equivalent devices manufactured by Diodes Incorporated with active product status. These devices maintain 1 A maximum collector current matching the MPS6652G specification and provide enhanced power dissipation capability (1 W versus 625 mW). The collector-emitter breakdown voltage is rated at 30 V, which is 10 V lower than the MPS6652G specification. Selection of ZTX549 or ZTX549STZ is appropriate for applications where the circuit design operates at or below 30 V collector-emitter voltage. The extended operating temperature range (-55°C to 200°C) provides additional thermal margin compared to the MPS6652G specification (-55°C to 150°C).

ZTX549STZ is supplied in cut tape (CT) packaging, while ZTX549 is supplied in bulk packaging. Package selection depends on procurement and assembly requirements.

Compliance Considerations:

All substitute parts are classified as REACH Unaffected and carry ECCN EAR99 designation, matching the regulatory status of the MPS6652G. ZTX549 and ZTX549STZ carry RoHS3 compliance certification. All devices maintain MSL 1 (Unlimited) moisture sensitivity level.

Frequently Asked Questions (FAQ)

Q: Can 2N3906BU be used as a direct replacement for MPS6652G in all applications?

A: 2N3906BU is not suitable for all applications. While it maintains the 40 V collector-emitter breakdown voltage and TO-92-3 package compatibility, the maximum collector current rating is 200 mA compared to the MPS6652G specification of 1 A. 2N3906BU is appropriate only for circuits where collector current does not exceed 200 mA.

Q: What is the difference between ZTX549 and ZTX549STZ?

A: ZTX549 and ZTX549STZ are electrically identical devices with identical electrical specifications. The difference is packaging format: ZTX549 is supplied in bulk packaging, while ZTX549STZ is supplied in cut tape (CT) packaging. Selection depends on procurement and assembly process requirements.

Q: Can ZTX549 be used in applications requiring 40 V collector-emitter voltage?

A: ZTX549 is rated for 30 V maximum collector-emitter breakdown voltage. Use of ZTX549 in applications requiring 40 V operation exceeds the device specification and is not recommended. For 40 V applications, select 2N4403BU or PN2907BU.

Q: What are the key differences between 2N4403BU and PN2907BU?

A: Both devices are rated for 40 V collector-emitter breakdown voltage and are available in TO-92-3 packaging. 2N4403BU supports 600 mA maximum collector current with Vce saturation of 750 mV at 50 mA base current and 500 mA collector current. PN2907BU supports 800 mA maximum collector current with Vce saturation of 1.6 V at 50 mA base current and 500 mA collector current. Selection depends on specific circuit requirements for collector current and saturation voltage characteristics.

Q: Are all substitute parts available in the same TO-92-3 package as MPS6652G?

A: 2N3906BU, 2N4403BU, and PN2907BU are available in TO-92-3 (TO-226-3) packaging compatible with MPS6652G. ZTX549 and ZTX549STZ are supplied in E-Line-3 packaging, which is mechanically compatible with TO-92 form factor but uses a different package designation. Verify mechanical compatibility with your specific PCB footprint design.

Q: What is the impact of higher DC current gain in substitute parts?

A: Substitute parts 2N4403BU and PN2907BU specify minimum DC current gain (hFE) of 100, compared to MPS6652G minimum of 50. Higher current gain reduces base drive requirements and improves circuit efficiency. This difference is beneficial in most applications and does not create compatibility issues.

Q: Can MPS6652G substitutes be used interchangeably in existing designs?

A: Substitution requires verification that the selected replacement part meets all circuit requirements for collector current, collector-emitter voltage, power dissipation, and frequency response. Direct mechanical and electrical compatibility exists for 2N4403BU and PN2907BU in TO-92-3 packages. ZTX549 and ZTX549STZ require verification of 30 V voltage rating suitability. 2N3906BU requires verification that collector current does not exceed 200 mA.

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