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MPS651G Equivalent & Substitute Parts
Part Overview
The MPS651G is an NPN bipolar junction transistor manufactured by onsemi, rated for 60V collector-emitter breakdown voltage and 2A maximum collector current. This component is designed for through-hole mounting in TO-92 (TO-226-3) packaging and operates across a temperature range of -55°C to 150°C. The MPS651G is classified as obsolete, making identification of equivalent substitute parts necessary for ongoing design support and procurement continuity.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Transistor Type | NPN |
| Maximum Collector Current (Ic) | 2 A |
| Collector-Emitter Breakdown Voltage (Max) | 60 V |
| Vce Saturation (Max) | 500mV @ 200mA, 2A |
| Collector Cutoff Current (ICBO) | 100nA |
| Maximum Power Dissipation | 625 mW |
| Transition Frequency | 75MHz |
| Operating Temperature Range | -55°C to 150°C |
| Mounting Type | Through Hole |
| Package Type | TO-92 (TO-226-3) |
Substitute Part Grouping Explanation
Substitute parts for the MPS651G are identified based on strict electrical and mechanical parameter matching. The following criteria determine substitution eligibility:
Core Electrical Parameters:
- Transistor type must be NPN
- Maximum collector current must be ≥ 2 A
- Collector-emitter breakdown voltage must be ≥ 60 V
- Vce saturation must be ≤ 500mV at specified bias conditions
- Collector cutoff current must be ≤ 100nA
Mechanical Parameters:
- Mounting type must be through-hole
- Package must be TO-92 compatible or E-Line (TO-92 compatible)
Operational Parameters:
- Operating temperature range must encompass or exceed -55°C to 150°C
The substitute parts ZTX651 and ZTX651STZ, both manufactured by Diodes Incorporated, meet all core electrical requirements and are physically compatible with the MPS651G footprint. Both substitutes are active products with enhanced specifications in power dissipation (1 W versus 625 mW) and transition frequency (175MHz versus 75MHz).
Parameter Comparison
| Parameter | MPS651G (onsemi) | ZTX651 (Diodes Inc.) | ZTX651STZ (Diodes Inc.) |
|---|---|---|---|
| Transistor Type | NPN | NPN | NPN |
| Maximum Collector Current | 2 A | 2 A | 2 A |
| Collector-Emitter Breakdown Voltage | 60 V | 60 V | 60 V |
| Vce Saturation (Max) | 500mV @ 200mA, 2A | 500mV @ 200mA, 2A | 500mV @ 200mA, 2A |
| Collector Cutoff Current | 100nA (ICBO) | 100nA (ICBO) | 10µA (ICBO) |
| Maximum Power Dissipation | 625 mW | 1 W | 1 W |
| Transition Frequency | 75MHz | 175MHz | 175MHz |
| Operating Temperature Range | -55°C to 150°C | -55°C to 200°C | -55°C to 200°C |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| Package Type | TO-92 (TO-226-3) | E-Line (TO-92 compatible) | E-Line (TO-92 compatible) |
| Product Status | Obsolete | Active | Active |
| RoHS Compliance | Not specified | ROHS3 Compliant | ROHS3 Compliant |
Engineering Selection Recommendations
ZTX651 (Diodes Incorporated) is suitable for applications requiring the MPS651G where bulk packaging is acceptable. This part is an active product with ROHS3 compliance and offers enhanced thermal performance (1 W versus 625 mW) and higher transition frequency (175MHz versus 75MHz). The extended operating temperature range (-55°C to 200°C) provides additional margin for high-temperature applications.
ZTX651STZ (Diodes Incorporated) is suitable for applications requiring the MPS651G where cut-tape packaging is required for automated assembly. This part is an active product with ROHS3 compliance and identical performance enhancements to the ZTX651. The formed leads variant accommodates specific insertion equipment requirements. Note that the collector cutoff current specification (10µA) differs from the MPS651G (100nA), which may affect leakage-sensitive circuit designs.
Both substitute parts satisfy the core electrical and mechanical requirements for direct replacement in through-hole applications. Selection between ZTX651 and ZTX651STZ depends on packaging and assembly process requirements rather than electrical performance.
Frequently Asked Questions (FAQ)
Q: Can ZTX651 and ZTX651STZ be used interchangeably with MPS651G?
A: Both ZTX651 and ZTX651STZ meet the core electrical specifications (60V, 2A, NPN type) and are physically compatible with TO-92 footprints. Selection between them depends on packaging format: ZTX651 is supplied in bulk, while ZTX651STZ is supplied in cut tape with formed leads for automated insertion.
Q: What are the key differences between the substitute parts?
A: ZTX651 and ZTX651STZ are electrically identical with the following exceptions: ZTX651STZ specifies a collector cutoff current of 10µA compared to 100nA for both MPS651G and ZTX651. This difference may be significant in applications where leakage current is a critical design parameter.
Q: Are the substitute parts physically compatible with MPS651G PCB layouts?
A: Yes. Both ZTX651 and ZTX651STZ use E-Line packaging, which is TO-92 compatible. Through-hole pin spacing and lead diameter are compatible with existing MPS651G PCB designs. Verify lead forming specifications for ZTX651STZ if using automated insertion equipment.
Q: What compliance certifications apply to the substitute parts?
A: Both ZTX651 and ZTX651STZ are ROHS3 compliant and REACH unaffected. The MPS651G compliance status is not specified in available documentation.
Q: Do the substitute parts offer performance improvements over MPS651G?
A: Yes. Both substitutes provide higher maximum power dissipation (1 W versus 625 mW) and higher transition frequency (175MHz versus 75MHz). Operating temperature range is extended to -55°C to 200°C compared to -55°C to 150°C for the MPS651G.
Q: Which substitute should be selected for new designs?
A: For new designs, either ZTX651 or ZTX651STZ is appropriate based on assembly process requirements. Both are active products with modern compliance certifications. ZTX651 is recommended for manual or wave soldering processes; ZTX651STZ is recommended for automated pick-and-place assembly with formed leads.
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