MPS5179RLRPG Equivalent & Substitute Parts

Part Overview

The MPS5179RLRPG is an RF transistor NPN manufactured by onsemi, rated for 12V collector-emitter breakdown voltage with a 2GHz transition frequency and 200W maximum power dissipation. The device is packaged in a through-hole TO-92 (TO-226-3) configuration and is classified as obsolete. Due to its obsolete product status, equivalent and substitute parts are necessary for ongoing design support, production continuity, and system maintenance applications.

Substiute Parts

MPS5179RLRPG

onsemiIn Stock: 696MPS5179RLRPG Datasheet

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BFP410H6327XTSA1

Infineon TechnologiesIn Stock: 972BFP410H6327XTSA1 Datasheet

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BFR93AWH6327XTSA1

Infineon TechnologiesIn Stock: 35409BFR93AWH6327XTSA1 Datasheet

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MRF454

MACOM Technology SolutionsIn Stock: 1981MRF454 Datasheet

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PH3135-5S

MACOM Technology SolutionsIn Stock: 827PH3135-5S Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the MPS5179RLRPG is determined by the following critical parameters:

Primary Substitution Criteria:

• Transistor Type: NPN (all substitutes must be NPN)
• Voltage - Collector Emitter Breakdown (Max): 12V or higher
• Frequency - Transition: 2GHz or higher
• Power - Max: 200W or higher
• Current - Collector (Ic) (Max): 50mA or higher
• DC Current Gain (hFE): Minimum 25 or higher

Secondary Considerations:

• Product Status: Active status preferred for long-term availability
• Mounting Type: Through-hole preferred for direct replacement; surface-mount alternatives available for redesign scenarios
• Package compatibility: TO-92 through-hole is primary; SOT-343 and SOT-323 surface-mount packages represent alternative form factors
• Compliance: REACH Unaffected and RoHS3 Compliant status for regulatory alignment

The substitute parts listed below meet or exceed the electrical specifications of the MPS5179RLRPG while offering improved availability and active product status.

Parameter Comparison

Engineering Selection Recommendations

BFP410H6327XTSA1 (Infineon Technologies)

This substitute is active and RoHS3 compliant. The BFP410H6327XTSA1 exceeds the frequency specification (25GHz vs. 2GHz) and provides higher DC current gain (60 vs. 25). However, the collector-emitter breakdown voltage is reduced to 5V, which does not meet the 12V requirement of the MPS5179RLRPG. The maximum power dissipation is significantly lower at 150mW. This part is suitable only for applications where the 5V voltage rating is acceptable and power dissipation requirements are below 150mW. Surface-mount packaging requires PCB redesign.

BFR93AWH6327XTSA1 (Infineon Technologies)

This substitute is active and RoHS3 compliant. The BFR93AWH6327XTSA1 maintains the 12V collector-emitter breakdown voltage specification and exceeds the frequency requirement (6GHz vs. 2GHz). The maximum collector current is increased to 90mA, and DC current gain is higher at 70. Maximum power dissipation is 300mW, which exceeds the 200W specification of the original part. This part provides electrical compatibility for voltage and frequency parameters. Surface-mount SOT-323 packaging requires PCB redesign.

MRF454 (MACOM Technology Solutions)

This substitute is active and RoHS3 compliant. The MRF454 exceeds the collector-emitter breakdown voltage at 18V and provides significantly higher collector current capability at 20A. Maximum power dissipation is 80W. The DC current gain is 40, which exceeds the minimum requirement. Transition frequency is not specified. Chassis-mount packaging represents a different form factor requiring mechanical redesign. This part is suitable for high-current applications with elevated voltage tolerance.

PH3135-5S (MACOM Technology Solutions)

This substitute is active and RoHS3 compliant. The PH3135-5S provides the highest collector-emitter breakdown voltage at 60V and supports 750mA maximum collector current. Maximum power dissipation is 5W. Transition frequency and DC current gain are not specified. Mounting type and package information are not provided. This part is suitable for high-voltage applications with moderate current requirements.

Frequently Asked Questions (FAQ)

Q: Can the BFP410H6327XTSA1 directly replace the MPS5179RLRPG?

A: No. While the BFP410H6327XTSA1 is an active NPN RF transistor with superior frequency performance (25GHz), its 5V collector-emitter breakdown voltage does not meet the 12V requirement of the MPS5179RLRPG. Additionally, its 150mW power rating is significantly lower than the 200W specification. This part is suitable only for redesigned circuits operating at 5V or lower.

Q: Is the BFR93AWH6327XTSA1 a suitable replacement for through-hole applications?

A: The BFR93AWH6327XTSA1 meets the electrical specifications (12V breakdown voltage, 6GHz frequency, 300mW power) but uses surface-mount SOT-323 packaging instead of through-hole TO-92. Direct board-level substitution is not possible without PCB redesign. However, the electrical parameters are compatible for functional replacement in redesigned circuits.

Q: What are the key differences between the MRF454 and the original MPS5179RLRPG?

A: The MRF454 is designed for high-current applications (20A vs. 50mA) with higher voltage tolerance (18V vs. 12V) and lower power dissipation (80W vs. 200W). It uses chassis-mount packaging instead of through-hole TO-92. Transition frequency is not specified for the MRF454. This part is suitable for power amplifier applications requiring high current handling.

Q: Why is transition frequency not specified for some substitute parts?

A: Transition frequency (fT) is a critical parameter for RF transistor selection. Parts without specified transition frequency may be designed for lower-frequency applications or may have frequency characteristics that vary significantly across operating conditions. Consult manufacturer datasheets for detailed frequency response information before selecting parts without specified fT values.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All active substitute parts listed (BFP410H6327XTSA1, BFR93AWH6327XTSA1, MRF454, and PH3135-5S) are RoHS3 compliant. The original MPS5179RLRPG RoHS status is not specified. RoHS3 compliance ensures compliance with current environmental and hazardous substance regulations.

Q: What is the impact of switching from through-hole to surface-mount packaging?

A: Through-hole to surface-mount conversion requires PCB redesign, including footprint changes, trace routing modifications, and potential changes to assembly processes. The BFP410H6327XTSA1 and BFR93AWH6327XTSA1 use surface-mount packages (SOT-343 and SOT-323 respectively), while the MPS5179RLRPG uses through-hole TO-92 packaging. Electrical functionality remains equivalent, but mechanical integration differs significantly.

Q: Can the PH3135-5S be used in high-voltage applications?

A: The PH3135-5S supports 60V collector-emitter breakdown voltage, making it suitable for high-voltage applications. However, its maximum power dissipation is only 5W, which is significantly lower than the MPS5179RLRPG (200W). Additionally, mounting type and package information are not provided. Verify mechanical compatibility and thermal management requirements before selection.

Q: What is the significance of DC Current Gain (hFE) in transistor substitution?

A: DC current gain determines the amplification factor of the transistor. The MPS5179RLRPG specifies a minimum hFE of 25 at 3mA and 1V. All active substitutes exceed this minimum (BFP410H6327XTSA1: 60, BFR93AWH6327XTSA1: 70, MRF454: 40). Higher hFE values provide greater amplification capability but may require circuit bias adjustments. Verify gain requirements for your specific application.

Q: Is inventory availability a factor in substitute selection?

A: Yes. The MPS5179RLRPG is obsolete with 667 pieces in stock. Active substitutes offer better long-term availability: BFP410H6327XTSA1 (914 pcs), BFR93AWH6327XTSA1 (35,300 pcs), MRF454 (1,903 pcs), and PH3135-5S (735 pcs). For production continuity and future support, active parts are preferred over obsolete components.