MPS5179RLRAG Equivalent & Substitute Parts

Part Overview

The MPS5179RLRAG is an RF transistor NPN manufactured by onsemi, rated for 12V collector-emitter breakdown voltage with a 2GHz transition frequency and 200W maximum power dissipation. This through-hole TO-92 device is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design requirements and production continuity.

Substiute Parts

MPS5179RLRAG
onsemiIn Stock: 3197MPS5179RLRAG Datasheet
MPS5179RLRAG
Current Part
2SC4915-O,LF
Toshiba Semiconductor and StorageIn Stock: 42132SC4915-O,LF Datasheet
2SC4915-O,LF
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BFP720FESDH6327XTSA1
Infineon TechnologiesIn Stock: 1039BFP720FESDH6327XTSA1 Datasheet
BFP720FESDH6327XTSA1
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BFR106E6327HTSA1
Infineon TechnologiesIn Stock: 1000385BFR106E6327HTSA1 Datasheet
BFR106E6327HTSA1
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JANTX2N5109
Microsemi CorporationIn Stock: 5787JANTX2N5109 Datasheet
JANTX2N5109
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MT3S16U(TE85L,F)
Toshiba Semiconductor and StorageIn Stock: 4003MT3S16U(TE85L,F) Datasheet
MT3S16U(TE85L,F)
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Key Parameters

Parameter Value Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 12V V
Frequency - Transition 2GHz GHz
Power - Max 200W W
Current - Collector (Ic) (Max) 50mA mA
DC Current Gain (hFE) (Min) 25 @ 3mA, 1V
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution of the MPS5179RLRAG is determined by the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Transistor Type: NPN polarity
  • Voltage Rating: Collector-emitter breakdown voltage equal to or greater than 12V
  • Frequency Capability: Transition frequency equal to or greater than 2GHz
  • Power Dissipation: Maximum power rating equal to or greater than 200W
  • Current Handling: Collector current capacity equal to or greater than 50mA
  • DC Current Gain: hFE minimum specification compatible with circuit biasing requirements

Secondary Considerations:

  • Mounting Type: Through-hole preferred for direct PCB compatibility; surface-mount alternatives require board redesign
  • Package Compatibility: TO-92-3 form factor or equivalent mechanical footprint
  • Product Status: Active status preferred for long-term availability

The substitute parts listed exhibit varying degrees of parameter alignment. Direct electrical equivalence is limited due to the obsolete status of the MPS5179RLRAG and the evolution of RF transistor technology toward higher frequencies and lower power dissipation in surface-mount packages.

Parameter Comparison

Parameter MPS5179RLRAG 2SC4915-O,LF BFP720FESDH6327XTSA1 BFR106E6327HTSA1 JANTX2N5109 MT3S16U(TE85L,F)
Manufacturer onsemi Toshiba Infineon Infineon Microsemi Toshiba
Transistor Type NPN NPN NPN NPN NPN NPN
Vce Breakdown (Max) 12V 30V 4.7V 15V 5V
Frequency - Transition 2GHz 550MHz 45GHz 5GHz 4GHz
Power - Max 200W 100mW 100mW 700mW 100mW
Ic (Max) 50mA 20mA 30mA 210mA 60mA
DC Current Gain (hFE) (Min) 25 @ 3mA, 1V 70 @ 1mA, 6V 160 @ 15mA, 3V 70 @ 70mA, 8V 80 @ 5mA, 1V
Mounting Type Through Hole Surface Mount Surface Mount Surface Mount Through Hole Surface Mount
Package / Case TO-92-3 SC-75, SOT-416 4-SMD, Flat Leads SC-59, SOT-23-3 TO-39-3 SC-70, SOT-323
Product Status Obsolete Active Active Active Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant RoHS non-compliant RoHS Compliant

Engineering Selection Recommendations

Through-Hole Mounting Requirement:

If through-hole mounting is mandatory for PCB compatibility, the JANTX2N5109 is the only substitute maintaining the through-hole form factor. However, complete electrical specifications for this device are not provided in the available data, limiting full parameter verification.

Surface-Mount Alternatives:

For applications permitting PCB redesign to accommodate surface-mount packages, the following active-status alternatives are available:

BFR106E6327HTSA1 (Infineon): Offers the highest collector current capacity (210mA) and power dissipation (700mW) among surface-mount options. Voltage rating of 15V exceeds the 12V requirement. Transition frequency of 5GHz exceeds the 2GHz specification. ROHS3 compliant and active product status ensure long-term availability. SOT-23-3 package provides compact form factor.

MT3S16U(TE85L,F) (Toshiba): Provides 4GHz transition frequency and 60mA collector current capacity. Voltage rating of 5V is below the 12V specification and represents a constraint for applications requiring full voltage headroom. RoHS compliant with active product status. SC-70 package offers minimal footprint.

2SC4915-O,LF (Toshiba): Offers 30V voltage rating and 550MHz transition frequency. Collector current capacity of 20mA is below the 50mA requirement. ROHS3 compliant with active product status.

BFP720FESDH6327XTSA1 (Infineon): Provides 45GHz transition frequency, significantly exceeding application requirements. Voltage rating of 4.7V is substantially below the 12V specification. Power dissipation of 100mW is significantly lower than the 200W requirement. ROHS3 compliant with active product status. Suitable only for high-frequency applications with reduced power requirements.

Compliance Considerations:

All active-status alternatives except JANTX2N5109 meet ROHS3 compliance requirements. JANTX2N5109 is RoHS non-compliant and should be selected only when legacy compliance standards are acceptable.

Frequently Asked Questions (FAQ)

Q: Can the MPS5179RLRAG be directly replaced with any of the listed substitutes?

A: Direct replacement is not possible. The MPS5179RLRAG combines through-hole mounting with 200W power dissipation and 12V voltage rating—a specification set not replicated in active-status alternatives. Substitution requires either acceptance of reduced power dissipation, modified voltage ratings, or PCB redesign for surface-mount packages.

Q: What is the primary limitation when selecting a substitute?

A: The 200W maximum power dissipation of the MPS5179RLRAG is not matched by any listed substitute. All active alternatives are rated for 100mW to 700mW maximum power. Applications requiring full 200W dissipation cannot be accommodated by these substitutes without circuit topology modification.

Q: Is through-hole mounting available in any substitute?

A: JANTX2N5109 maintains through-hole TO-39 packaging. However, complete electrical specifications are not provided, preventing full parameter verification. All other substitutes require surface-mount PCB implementation.

Q: Which substitute offers the best voltage headroom above 12V?

A: 2SC4915-O,LF provides 30V collector-emitter breakdown voltage, offering the highest margin above the 12V requirement. BFR106E6327HTSA1 provides 15V rating. MT3S16U(TE85L,F) and BFP720FESDH6327XTSA1 provide 5V and 4.7V ratings respectively, both below the 12V specification.

Q: Are all active-status substitutes RoHS compliant?

A: Four of five active-status substitutes are ROHS3 compliant: 2SC4915-O,LF, BFP720FESDH6327XTSA1, BFR106E6327HTSA1, and MT3S16U(TE85L,F). JANTX2N5109 is RoHS non-compliant.

Q: What frequency capability is required for substitution?

A: The MPS5179RLRAG operates at 2GHz transition frequency. All listed substitutes meet or exceed this specification: 2SC4915-O,LF (550MHz—below requirement), BFP720FESDH6327XTSA1 (45GHz), BFR106E6327HTSA1 (5GHz), and MT3S16U(TE85L,F) (4GHz). Only 2SC4915-O,LF falls below the 2GHz threshold.

Q: Which substitute provides the highest collector current capacity?

A: BFR106E6327HTSA1 provides 210mA maximum collector current, exceeding the 50mA requirement of the MPS5179RLRAG. MT3S16U(TE85L,F) provides 60mA. 2SC4915-O,LF provides 20mA, below the requirement. BFP720FESDH6327XTSA1 provides 30mA.

Q: Can surface-mount substitutes be used on existing through-hole PCBs?

A: Surface-mount substitutes require PCB redesign with appropriate pad patterns, solder mask openings, and assembly process modifications. Direct substitution on through-hole PCBs is not feasible without board rework.

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