MPS5179 Equivalent & Substitute Parts

Part Overview

The MPS5179 is an RF transistor NPN rated for 12V collector-emitter breakdown voltage with a 2GHz transition frequency and 200mW maximum power dissipation in a through-hole TO-92 package. Manufactured by onsemi, this component is classified as obsolete, necessitating identification of functionally equivalent alternatives for new designs or production continuity. Substitute parts must maintain compatibility across RF performance parameters, power ratings, and mounting requirements while accounting for package form factor differences.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	12V	V
Frequency - Transition	2GHz	GHz
Power - Max	200mW	mW
Current - Collector (Ic) (Max)	50mA	mA
DC Current Gain (hFE) (Min)	25 @ 3mA, 1V	—
Mounting Type	Through Hole	—
Package / Case	TO-226-3, TO-92-3	—
Product Status	Obsolete	—
RoHS Status	RoHS non-compliant	—

Substitute Part Grouping Explanation

Substitution of the MPS5179 is determined by the following critical parameters: NPN transistor type, maximum collector-emitter breakdown voltage, transition frequency capability, maximum power dissipation, maximum collector current, and DC current gain characteristics. The MPS5179 operates at 12V with 2GHz frequency response and 200mW power handling.

Substitute parts are grouped into two categories based on electrical compatibility and mounting form factor:

Category 1: Surface Mount Alternatives with Reduced Voltage Rating The 2SC4713KT146R (Rohm Semiconductor) operates at 6V maximum breakdown voltage with 800MHz transition frequency. This part maintains the 50mA collector current and 200mW power rating but operates at lower voltage and frequency specifications. Surface mount packaging (SMT3/SOT-23-3) requires circuit board redesign.

Category 2: High-Frequency Surface Mount Alternatives The BFP740FESDH6327XTSA1 (Infineon Technologies) provides 47GHz transition frequency with 4.7V breakdown voltage, 45mA collector current, and 160mW power dissipation in a 4-TSFP surface mount package. This part exceeds the frequency requirement but operates at lower voltage and power levels.

Category 3: Dual NPN Surface Mount Alternative The HFA3134IHZ96 (Intersil) is a dual NPN configuration rated for 9V breakdown voltage, 8.5GHz transition frequency, 26mA collector current per transistor, and surface mount SOT-23-6 packaging. This part provides integrated dual transistor functionality in a compact package.

All substitute parts are active products with RoHS3 compliance, addressing the obsolescence and compliance limitations of the original MPS5179.

Parameter Comparison

Parameter	MPS5179	2SC4713KT146R	BFP740FESDH6327XTSA1	HFA3134IHZ96
Manufacturer	onsemi	Rohm Semiconductor	Infineon Technologies	Intersil
Transistor Type	NPN	NPN	NPN	2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max)	12V	6V	4.7V	9V
Frequency - Transition	2GHz	800MHz	47GHz	8.5GHz
Power - Max	200mW	200mW	160mW	—
Current - Collector (Ic) (Max)	50mA	50mA	45mA	26mA
DC Current Gain (hFE) (Min)	25 @ 3mA, 1V	180 @ 5mA, 5V	160 @ 25mA, 3V	48 @ 10mA, 2V
Mounting Type	Through Hole	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-226-3, TO-92-3	TO-236-3, SC-59, SOT-23-3	4-SMD, Flat Leads	SOT-23-6
Product Status	Obsolete	Active	Active	Active
RoHS Status	RoHS non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

For Direct Through-Hole Replacement: No direct through-hole substitute exists among the provided alternatives. All substitute parts utilize surface mount packaging, requiring circuit board redesign and layout modifications. The MPS5179 through-hole TO-92 form factor is not replicated in the active product alternatives.

For Surface Mount Redesign with Voltage Margin Preservation: The 2SC4713KT146R maintains the 50mA collector current and 200mW power dissipation specifications. However, the 6V maximum breakdown voltage is 50% lower than the MPS5179 specification. This part is suitable only for applications where the operating voltage does not exceed 6V.

For High-Frequency Applications: The BFP740FESDH6327XTSA1 provides superior frequency performance at 47GHz, exceeding the MPS5179 2GHz requirement by a factor of 23.5. The 4.7V breakdown voltage and 160mW power rating represent reduced electrical headroom compared to the original specification. This part is appropriate for applications requiring extended frequency response beyond 2GHz.

For Integrated Dual Transistor Configurations: The HFA3134IHZ96 dual NPN configuration operates at 9V breakdown voltage and 8.5GHz transition frequency. The 26mA per-transistor collector current is 48% lower than the MPS5179 specification. This part is suitable for applications requiring dual transistor functionality in a compact surface mount package.

Compliance Consideration: All substitute parts carry RoHS3 compliance certification, addressing the RoHS non-compliant status of the obsolete MPS5179. Selection of any substitute part resolves regulatory compliance requirements for new production.

Frequently Asked Questions (FAQ)

Q: Can the 2SC4713KT146R directly replace the MPS5179 in existing through-hole designs?

A: No. The 2SC4713KT146R is a surface mount component in SOT-23-3 packaging, whereas the MPS5179 uses through-hole TO-92-3 packaging. Circuit board redesign is required. Additionally, the 6V maximum breakdown voltage is lower than the MPS5179 12V rating.

Q: What is the primary limitation of using the BFP740FESDH6327XTSA1 as a substitute?

A: The BFP740FESDH6327XTSA1 operates at 4.7V maximum breakdown voltage, which is 60.8% lower than the MPS5179 12V specification. Applications operating above 4.7V will exceed the absolute maximum rating. The 160mW power dissipation is also 20% lower than the MPS5179 200mW specification.

Q: Is the HFA3134IHZ96 suitable for single-transistor applications?

A: The HFA3134IHZ96 is a dual NPN configuration. While each transistor can be used independently, the part is optimized for dual-transistor applications. Single-transistor applications would not utilize the integrated second transistor, resulting in inefficient component utilization.

Q: What are the package-related considerations when switching from through-hole to surface mount?

A: Surface mount substitutes require different PCB layout, soldering processes, and assembly equipment compared to through-hole components. The 2SC4713KT146R uses SOT-23-3 (6-pin), the BFP740FESDH6327XTSA1 uses 4-TSFP (4-pin), and the HFA3134IHZ96 uses SOT-23-6 (6-pin) packages. Each package has distinct footprint and thermal management characteristics.

Q: How do the DC current gain specifications compare across substitute parts?

A: The MPS5179 specifies 25 hFE minimum at 3mA/1V. The 2SC4713KT146R provides 180 hFE at 5mA/5V, the BFP740FESDH6327XTSA1 provides 160 hFE at 25mA/3V, and the HFA3134IHZ96 provides 48 hFE at 10mA/2V. Gain specifications are measured at different bias points, requiring circuit-level analysis for compatibility assessment.

Q: Are all substitute parts RoHS compliant?

A: Yes. All three substitute parts carry RoHS3 compliance certification. The original MPS5179 is RoHS non-compliant, making substitution necessary for applications subject to RoHS regulatory requirements.

Q: What frequency margin exists between the MPS5179 and substitute parts?

A: The MPS5179 operates at 2GHz. The 2SC4713KT146R operates at 800MHz (60% lower), the BFP740FESDH6327XTSA1 operates at 47GHz (23.5× higher), and the HFA3134IHZ96 operates at 8.5GHz (4.25× higher). Frequency selection depends on application bandwidth requirements.

Q: Can the MPS5179 be sourced as a new component?

A: The MPS5179 is classified as obsolete. While 5347 pieces are reported in inventory as new original stock, long-term availability is not guaranteed. Substitution planning is recommended for production continuity.

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