MPS4250G Equivalent & Substitute Parts

Part Overview

The MPS4250G is a PNP bipolar junction transistor manufactured by onsemi, rated for 40 V collector-emitter breakdown voltage and 50 mA maximum collector current in a Through Hole TO-92 package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity. The MPS4250G delivers 625 mW maximum power dissipation and operates across a temperature range of -55°C to 150°C.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Voltage - Collector Emitter Breakdown (Max)	40	V
Current - Collector (Ic) (Max)	50	mA
Power - Max	625	mW
Vce Saturation (Max)	250	mV @ 500µA, 10mA
DC Current Gain (hFE) (Min)	250	@ 10mA, 5V
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package / Case	TO-92-3	—

Substitute Part Grouping Explanation

Substitution of the MPS4250G is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Transistor Type: PNP (required)
Voltage - Collector Emitter Breakdown (Max): ≥ 40 V (minimum requirement)
Current - Collector (Ic) (Max): ≥ 50 mA (minimum requirement)
Power - Max: ≥ 625 mW (minimum requirement)
Operating Temperature Range: Must encompass -55°C to 150°C
Mounting Type: Through Hole (for direct mechanical compatibility)

Secondary Compatibility Factors:

Package / Case: TO-92-3 or mechanically equivalent form factor
Vce Saturation characteristics within acceptable operating ranges
DC Current Gain (hFE) sufficient for intended switching applications

Substitute parts are grouped into two categories: Direct Through-Hole Replacements (identical mounting) and Functional Equivalents (different package form factor requiring board redesign).

Parameter Comparison

Parameter	MPS4250G	2N3906BU	2N4403BU	MMBT5087LT1G	ZTX790A
Manufacturer	onsemi	Fairchild Semiconductor	Fairchild Semiconductor	onsemi	Diodes Incorporated
Product Status	Obsolete	Active	Active	Active	Active
Transistor Type	PNP	PNP	PNP	PNP	PNP
Voltage - Collector Emitter Breakdown (Max)	40 V	40 V	40 V	50 V	40 V
Current - Collector (Ic) (Max)	50 mA	200 mA	600 mA	50 mA	2 A
Power - Max	625 mW	625 mW	625 mW	300 mW	1 W
Vce Saturation (Max)	250 mV @ 500µA, 10mA	400 mV @ 5mA, 50mA	750 mV @ 50mA, 500mA	300 mV @ 1mA, 10mA	750 mV @ 50mA, 2A
DC Current Gain (hFE) (Min)	250 @ 10mA, 5V	100 @ 10mA, 1V	100 @ 150mA, 2V	250 @ 100µA, 5V	300 @ 10mA, 2V
Frequency - Transition	—	250 MHz	200 MHz	40 MHz	100 MHz
Operating Temperature Range	-55 to 150 °C	-55 to 150 °C	-55 to 150 °C	-55 to 150 °C	-55 to 200 °C
Mounting Type	Through Hole	Through Hole	Through Hole	Surface Mount	Through Hole
Package / Case	TO-92-3	TO-92-3	TO-92-3	SOT-23-3	E-Line-3

Engineering Selection Recommendations

Direct Through-Hole Replacements (Pin-Compatible):

The 2N3906BU and 2N4403BU are both active products from Fairchild Semiconductor in TO-92-3 packages, providing direct mechanical and electrical compatibility with the MPS4250G. Both devices exceed the minimum electrical requirements (40 V breakdown, 50 mA collector current, 625 mW power dissipation) and maintain the identical operating temperature range. The 2N3906BU is suitable for applications requiring up to 200 mA collector current, while the 2N4403BU accommodates up to 600 mA, offering design margin for higher-current applications.

Functional Equivalent - Surface Mount Package:

The MMBT5087LT1G is an active onsemi product in SOT-23-3 surface mount package. This device matches the MPS4250G in collector current rating (50 mA) and DC current gain characteristics (250 hFE minimum). The higher breakdown voltage (50 V) provides additional design margin. However, this substitute requires printed circuit board redesign due to the different package form factor and mounting technology.

High-Current Functional Equivalent:

The ZTX790A from Diodes Incorporated is an active product in E-Line (TO-92 compatible) package rated for 2 A collector current and 1 W power dissipation. This device provides substantial design margin for applications requiring higher current handling. The extended operating temperature range (-55°C to 200°C) supports demanding thermal environments. The E-Line package maintains mechanical compatibility with standard TO-92 board layouts.

All substitute parts carry REACH Unaffected or ROHS3 Compliant status, ensuring regulatory compliance for current production environments.

Frequently Asked Questions (FAQ)

Q: Can the 2N3906BU directly replace the MPS4250G without circuit modification?

A: Yes. The 2N3906BU is a pin-compatible TO-92-3 device with identical voltage and temperature specifications. It exceeds the MPS4250G in collector current rating (200 mA vs. 50 mA) and power dissipation (625 mW), making it suitable for direct substitution in existing through-hole designs.

Q: What is the difference between the 2N3906BU and 2N4403BU substitutes?

A: Both are Fairchild Semiconductor PNP transistors in TO-92-3 packages with 40 V breakdown voltage. The primary difference is collector current rating: 2N3906BU handles 200 mA maximum, while 2N4403BU handles 600 mA maximum. Select based on circuit current requirements.

Q: Why does the MMBT5087LT1G have lower power dissipation (300 mW vs. 625 mW)?

A: The MMBT5087LT1G is a surface mount device in SOT-23-3 package, which has inherent thermal limitations compared to through-hole TO-92 packages. The 300 mW rating reflects the package's thermal characteristics, not a functional limitation for 50 mA applications. This device is suitable for low-power switching applications but requires board redesign.

Q: Is the ZTX790A suitable for all MPS4250G applications?

A: The ZTX790A exceeds MPS4250G specifications in collector current (2 A vs. 50 mA) and power dissipation (1 W vs. 625 mW). It is suitable for applications requiring higher current handling or thermal margin. The E-Line package is mechanically compatible with standard TO-92 board layouts, enabling direct substitution without redesign.

Q: What are the key electrical differences between these substitutes?

A: All substitutes maintain the 40 V (or higher) breakdown voltage and -55°C to 150°C operating range. Collector current ratings vary from 50 mA (MMBT5087LT1G) to 2 A (ZTX790A). DC current gain (hFE) ranges from 100 to 300 minimum, with the MPS4250G and MMBT5087LT1G both specified at 250 minimum. Vce saturation characteristics differ, affecting switching speed and power dissipation in saturated applications.

Q: Can I use the MMBT5087LT1G in a through-hole socket designed for TO-92?

A: No. The MMBT5087LT1G is a surface mount device in SOT-23-3 package with different pin spacing and lead configuration. It requires surface mount assembly on a redesigned printed circuit board and cannot be inserted into through-hole sockets.

Q: Which substitute offers the best thermal performance?

A: The ZTX790A provides the highest power dissipation rating (1 W) and extended operating temperature range (-55°C to 200°C), making it suitable for thermally demanding applications. For standard -55°C to 150°C applications, the 2N3906BU and 2N4403BU offer adequate thermal performance with 625 mW ratings.

Q: Are all substitutes RoHS compliant?

A: The MMBT5087LT1G and ZTX790A are explicitly ROHS3 Compliant. The 2N3906BU and 2N4403BU carry REACH Unaffected status, indicating compliance with current regulatory requirements. All devices are suitable for modern production environments.

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