MPS2369 Equivalent & Substitute Parts

Part Overview

The MPS2369 is an NPN bipolar junction transistor (BJT) manufactured by onsemi, rated for 15 V collector-emitter breakdown voltage and 200 mA maximum collector current. The device is packaged in a Through Hole TO-92 (TO-226-3) configuration and dissipates a maximum of 625 mW. The MPS2369 is classified as obsolete, making identification of equivalent substitute parts necessary for ongoing design support and procurement continuity. The substitute part MMBT2369ALT1G provides electrical equivalence in a surface mount package format with active product status.

Substiute Parts

MPS2369
onsemiIn Stock: 2986MPS2369 Datasheet
MPS2369
Current Part
MMBT2369ALT1G
onsemiIn Stock: 125240MMBT2369ALT1G Datasheet
MMBT2369ALT1G
Direct

Key Parameters

Parameter Value Unit
Transistor Type NPN
Current - Collector (Ic) Max 200 mA
Voltage - Collector Emitter Breakdown (Max) 15 V
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Through Hole / Surface Mount
Package Type TO-92 / SOT-23-3
RoHS Status Non-compliant / Compliant

Substitute Part Grouping Explanation

Substitution of the MPS2369 with MMBT2369ALT1G is based on matching the following critical electrical parameters:

  • Transistor Type: Both devices are NPN configuration
  • Maximum Collector Current (Ic): Both rated at 200 mA
  • Collector-Emitter Breakdown Voltage: Both rated at 15 V maximum
  • Operating Temperature Range: Both operate across -55°C to 150°C (TJ)
  • Current-Collector Cutoff (Icbo): Both specified at 400 nA maximum

The primary difference between these parts is the mounting technology and package format. The MPS2369 uses Through Hole TO-92 packaging, while the MMBT2369ALT1G uses Surface Mount SOT-23-3 packaging. This substitution is valid when circuit board design accommodates surface mount technology and when the reduced power dissipation rating of the substitute part (225 mW versus 625 mW) remains within application requirements.

Parameter Comparison

Parameter MPS2369 MMBT2369ALT1G Unit
Manufacturer onsemi onsemi
Transistor Type NPN NPN
Current - Collector (Ic) Max 200 200 mA
Voltage - Collector Emitter Breakdown (Max) 15 15 V
Vce Saturation (Max) 250 mV @ 1 mA, 10 mA 500 mV @ 10 mA, 100 mA V
Current - Collector Cutoff (Max) 400 400 nA
DC Current Gain (hFE) Min 40 @ 10 mA, 1 V 20 @ 100 mA, 1 V
Power - Max 625 225 mW
Operating Temperature -55 to 150 -55 to 150 °C (TJ)
Mounting Type Through Hole Surface Mount
Package / Case TO-226-3, TO-92-3 TO-236-3, SC-59, SOT-23-3
Product Status Obsolete Active
RoHS Status Non-compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

MPS2369 (Through Hole TO-92)

The MPS2369 is classified as obsolete. Selection of this part is limited to legacy system maintenance, repair of existing equipment, or applications where through-hole mounting is mandatory. The device is RoHS non-compliant, which may restrict use in new designs subject to environmental regulations. Inventory availability is limited to existing stock (2900 Pcs).

MMBT2369ALT1G (Surface Mount SOT-23-3)

The MMBT2369ALT1G is the active equivalent substitute, manufactured by the same supplier (onsemi) with ROHS3 compliance. This part is suitable for new designs and provides superior procurement continuity with 125200 Pcs in stock. The surface mount SOT-23-3 package is standard in modern PCB assembly processes. The reduced maximum power dissipation (225 mW versus 625 mW) requires verification that application current and voltage conditions remain within this limit. The DC current gain specification differs between parts (40 @ 10 mA for MPS2369 versus 20 @ 100 mA for MMBT2369ALT1G), reflecting different test conditions rather than fundamental device differences.

Frequently Asked Questions (FAQ)

Q: Can MMBT2369ALT1G directly replace MPS2369 in existing through-hole designs?

A: Electrical substitution is valid based on matching Ic, Vce(br), and operating temperature specifications. However, the MMBT2369ALT1G uses surface mount SOT-23-3 packaging, requiring PCB redesign and assembly process changes. Through-hole socket compatibility is not applicable.

Q: What is the significance of the different Vce saturation specifications?

A: The MPS2369 specifies Vce saturation at 250 mV (1 mA, 10 mA test conditions), while MMBT2369ALT1G specifies 500 mV (10 mA, 100 mA test conditions). These differences reflect different measurement points in the device operating range. Both values are within acceptable saturation performance for general-purpose switching applications.

Q: Does the lower power rating of MMBT2369ALT1G (225 mW vs. 625 mW) affect substitution validity?

A: The reduced power dissipation rating reflects the smaller physical size of the SOT-23-3 package. Substitution is valid only when application power dissipation remains below 225 mW. Designs operating near the 625 mW limit of the original MPS2369 require thermal analysis to confirm compatibility with the substitute part.

Q: Are there compliance differences between these parts?

A: Yes. The MPS2369 is RoHS non-compliant, while MMBT2369ALT1G is ROHS3 compliant. Both parts are REACH unaffected and carry the same ECCN (EAR99) and HTSUS classifications. New designs subject to environmental regulations must use MMBT2369ALT1G.

Q: What is the difference in DC current gain between these parts?

A: The MPS2369 specifies minimum hFE of 40 at 10 mA collector current and 1 V Vce. The MMBT2369ALT1G specifies minimum hFE of 20 at 100 mA collector current and 1 V Vce. These specifications are measured at different operating points. For applications sensitive to current gain, circuit design must accommodate the lower gain specification of the substitute part.

Q: Is the MPS2369 still available for procurement?

A: The MPS2369 is classified as obsolete. Existing inventory is limited to 2900 Pcs. For new designs and long-term procurement, MMBT2369ALT1G (125200 Pcs in stock) is the recommended active substitute.

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