MOC216VM Optoisolator - Equivalent & Substitute Parts

Part Overview

The MOC216VM is a 2500Vrms optoisolator transistor with base output in 8-SOIC surface mount packaging, manufactured by onsemi. This component is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement. The MOC216VM provides galvanic isolation for DC input signals with transistor output capability suitable for low-voltage switching applications.

Key Parameters

Parameter	MOC216VM
Manufacturer	onsemi
Voltage - Isolation	2500Vrms
Number of Channels	1
Output Type	Transistor with Base
Current Transfer Ratio (Min)	50% @ 1mA
Voltage - Output (Max)	30V
Current - Output / Channel	150mA
Vce Saturation (Max)	400mV
Operating Temperature	-40°C ~ 100°C
Package / Case	8-SOIC (0.154", 3.90mm Width)
Mounting Type	Surface Mount
Product Status	Obsolete

Substitute Part Grouping Explanation

Substitution for the MOC216VM is determined by the following critical parameters:

Package compatibility: 8-SOIC form factor with identical 0.154" (3.90mm) width
Output configuration: Transistor with base output topology
Isolation voltage: Minimum 2500Vrms (higher isolation ratings are acceptable)
Input type: DC input
Output voltage rating: 30V maximum
Vce saturation: 400mV maximum
Operating temperature range: Must support -40°C to 100°C minimum
Mounting type: Surface mount

The IL215AT and IL216AT from Vishay Semiconductor Opto Division meet these substitution criteria. Both devices provide higher isolation voltage (4000Vrms), identical package geometry, and compatible output characteristics. The primary distinction between the two Vishay alternatives is the current transfer ratio specification.

Parameter Comparison

Parameter	MOC216VM	IL215AT	IL216AT
Manufacturer	onsemi	Vishay Semiconductor Opto Division	Vishay Semiconductor Opto Division
Voltage - Isolation	2500Vrms	4000Vrms	4000Vrms
Number of Channels	1	1	1
Output Type	Transistor with Base	Transistor with Base	Transistor with Base
Current Transfer Ratio (Min)	50% @ 1mA	20% @ 1mA	50% @ 1mA
Voltage - Output (Max)	30V	30V	30V
Vce Saturation (Max)	400mV	400mV	400mV
Turn On / Turn Off Time (Typ)	7.5µs, 5.7µs	3µs, 3µs	3µs, 3µs
Voltage - Forward (Vf) (Typ)	1.07V	1V	1V
Current - DC Forward (If) (Max)	60mA	60mA	60mA
Operating Temperature	-40°C ~ 100°C	-55°C ~ 100°C	-55°C ~ 100°C
Package / Case	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Product Status	Obsolete	Active	Active
RoHS Status	REACH Unaffected	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IL216AT is the primary substitute for MOC216VM. This device matches the current transfer ratio specification (50% @ 1mA) and provides superior isolation voltage (4000Vrms versus 2500Vrms). The IL216AT is active in production status with ROHS3 compliance, ensuring long-term availability and regulatory alignment. The extended operating temperature range (-55°C to 100°C) provides additional margin beyond the MOC216VM specification.

IL215AT is an alternative substitute when current transfer ratio tolerance is not critical to circuit operation. This device provides the same isolation voltage upgrade and package compatibility but specifies a lower minimum current transfer ratio (20% @ 1mA). The IL215AT is also active in production with ROHS3 compliance.

Both substitutes demonstrate faster switching performance (3µs turn-on and turn-off times versus 7.5µs and 5.7µs for the MOC216VM), which may require circuit validation in timing-sensitive applications.

Frequently Asked Questions (FAQ)

Q: Can IL215AT and IL216AT be used interchangeably with MOC216VM?

A: Both IL215AT and IL216AT are pin-compatible substitutes in 8-SOIC packaging. IL216AT is the direct functional equivalent due to matching current transfer ratio. IL215AT requires circuit validation if current transfer ratio tolerance affects circuit performance.

Q: What is the impact of higher isolation voltage in the Vishay substitutes?

A: The 4000Vrms isolation rating of IL215AT and IL216AT exceeds the MOC216VM 2500Vrms specification. Higher isolation voltage does not degrade circuit performance in applications designed for 2500Vrms isolation; it provides additional safety margin.

Q: Are there packaging differences between MOC216VM and the Vishay substitutes?

A: All three devices use identical 8-SOIC (0.154", 3.90mm width) surface mount packaging. PCB layout and reflow profiles remain unchanged during substitution.

Q: What compliance certifications apply to the substitute parts?

A: IL215AT and IL216AT are ROHS3 compliant. The MOC216VM is REACH unaffected. Both Vishay devices carry EAR99 ECCN classification matching the original part.

Q: How do switching times differ between MOC216VM and substitutes?

A: IL215AT and IL216AT specify 3µs turn-on and turn-off times, compared to 7.5µs and 5.7µs for MOC216VM. Applications with timing-dependent circuits should validate performance with the faster switching characteristics of the Vishay alternatives.

Q: What is the current transfer ratio specification difference?

A: MOC216VM and IL216AT both specify 50% minimum current transfer ratio at 1mA input current. IL215AT specifies 20% minimum, requiring higher input current for equivalent output performance in some circuit topologies.

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