MMVL3700T1 Equivalent & Substitute Parts

Part Overview

The MMVL3700T1 is an RF Diode PIN - Single manufactured by onsemi, rated for 200V peak reverse voltage and 200 mW power dissipation in SOD-323 packaging. This component is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement planning. The part operates at a maximum junction temperature of 150°C and is RoHS non-compliant.

Substiute Parts

MMVL3700T1

onsemiIn Stock: 1455MMVL3700T1 Datasheet

Current PartRFQ

BAR6503WE6327HTSA1

Infineon TechnologiesIn Stock: 12601BAR6503WE6327HTSA1 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the MMVL3700T1 is determined by the following critical parameters:

• Diode Type: PIN - Single configuration required
• Package Compatibility: SOD-323 form factor for mechanical and thermal compatibility
• Voltage Rating: Peak reverse voltage capability must meet or exceed 200V
• Current Handling: Maximum forward current must support 20 mA operation
• Power Dissipation: Thermal capability must accommodate 200 mW continuous operation
• Frequency Response: Capacitance and resistance characteristics at specified frequencies

The BAR6503WE6327HTSA1 from Infineon Technologies is identified as a substitute part. However, this part exhibits reduced voltage rating (30V vs. 200V) and increased current capacity (100 mA vs. 20 mA), indicating application-specific compatibility rather than direct functional equivalence.

Parameter Comparison

Engineering Selection Recommendations

The BAR6503WE6327HTSA1 shares identical package form factor and operating temperature range with the MMVL3700T1. The substitute part is currently in active production status, whereas the original part is obsolete. The BAR6503WE6327HTSA1 achieves ROHS3 compliance, addressing regulatory requirements that the original part does not meet.

Critical consideration: The BAR6503WE6327HTSA1 operates at significantly reduced peak reverse voltage (30V versus 200V). This voltage differential must be evaluated against circuit requirements. The substitute part provides superior current handling capacity (100 mA versus 20 mA) and marginally higher power dissipation capability (250 mW versus 200 mW).

Selection of the BAR6503WE6327HTSA1 is appropriate only for applications where the 30V voltage rating is sufficient for the intended circuit topology.

Frequently Asked Questions (FAQ)

Q: Can the BAR6503WE6327HTSA1 directly replace the MMVL3700T1 in all applications?

A: No. While both parts share SOD-323 packaging and PIN diode configuration, the BAR6503WE6327HTSA1 has a maximum peak reverse voltage of 30V compared to the MMVL3700T1's 200V rating. Substitution is valid only for circuits operating at or below 30V reverse bias.

Q: What is the significance of the packaging designation "SC-76, SOD-323"?

A: Both designations refer to the same physical package form factor. SC-76 and SOD-323 are equivalent nomenclature for this surface-mount diode package. Mechanical and thermal compatibility is assured between parts sharing this package specification.

Q: Why is the MMVL3700T1 listed as obsolete?

A: Obsolete status indicates the part is no longer manufactured by onsemi. The BAR6503WE6327HTSA1 represents an active alternative from a different manufacturer, ensuring continued component availability for new designs or production continuity.

Q: Does the ROHS3 compliance of the BAR6503WE6327HTSA1 matter if the original part was RoHS non-compliant?

A: ROHS3 compliance is relevant for new designs and markets with regulatory requirements for lead-free components. If the original application required RoHS non-compliant parts, the substitute's compliance status does not create incompatibility. However, for new production or regulated markets, the ROHS3-compliant substitute is advantageous.

Q: How do the capacitance and resistance characteristics compare?

A: The BAR6503WE6327HTSA1 exhibits lower capacitance (0.8pF at 3V versus 1pF at 20V) and lower resistance (900mOhm versus 1Ohm at 10mA). These differences may affect high-frequency circuit behavior and should be verified against circuit simulation or empirical testing for the specific application.