MMSS8050W-J-TP Equivalent & Substitute Parts

Part Overview

The MMSS8050W-J-TP is a Bipolar (BJT) Transistor NPN manufactured by Micro Commercial Co, designed for interface applications in surface mount configurations. This device operates at 25 V collector-emitter breakdown voltage with a maximum collector current of 1.5 A and 200 mW power dissipation. The part is classified as Last Time Buy, indicating discontinued production status. Identification of equivalent and substitute parts is necessary to ensure design continuity and procurement availability for applications currently utilizing this component.

Substiute Parts

MMSS8050W-J-TP
Micro Commercial CoIn Stock: 987MMSS8050W-J-TP Datasheet
MMSS8050W-J-TP
Current Part
MMSS8050W-H-TP
Micro Commercial CoIn Stock: 1134MMSS8050W-H-TP Datasheet
MMSS8050W-H-TP
Parametric Equivalent
MMSS8050W-L-TP
Micro Commercial CoIn Stock: 790MMSS8050W-L-TP Datasheet
MMSS8050W-L-TP
Parametric Equivalent
BC848AW RFG
Taiwan Semiconductor CorporationIn Stock: 18915BC848AW RFG Datasheet
BC848AW RFG
Similar
BC848BW RFG
Taiwan Semiconductor CorporationIn Stock: 19051BC848BW RFG Datasheet
BC848BW RFG
Similar
BC848CW RFG
Taiwan Semiconductor CorporationIn Stock: 18825BC848CW RFG Datasheet
BC848CW RFG
Similar
BC849AW RFG
Taiwan Semiconductor CorporationIn Stock: 18950BC849AW RFG Datasheet
BC849AW RFG
Similar
BC849BW RFG
Taiwan Semiconductor CorporationIn Stock: 18878BC849BW RFG Datasheet
BC849BW RFG
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BC849CW RFG
Taiwan Semiconductor CorporationIn Stock: 18977BC849CW RFG Datasheet
BC849CW RFG
Similar

Key Parameters

Parameter Value Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 25 V
Current - Collector (Ic) (Max) 1.5 A
Power - Max 200 mW
Frequency - Transition 100 MHz
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic 500mV @ 80mA, 800mA

Substitute Part Grouping Explanation

Substitute parts for the MMSS8050W-J-TP are categorized into two groups based on electrical parameter compatibility:

Parametric Equivalents (Direct Substitutes): Parts that maintain identical electrical specifications across all critical parameters including maximum collector current (1.5 A), collector-emitter breakdown voltage (25 V), power dissipation (200 mW), transition frequency (100 MHz), and DC current gain characteristics. These parts are interchangeable at the circuit level without design modification.

Similar Parts (Application-Dependent Substitutes): Parts that share the same package type (SOT-323), operating temperature range (-55°C to 150°C), transition frequency (100 MHz), and power dissipation (200 mW), but differ in maximum collector current (100 mA versus 1.5 A) and collector-emitter breakdown voltage (30 V versus 25 V). These parts are suitable for applications where the circuit current requirements do not exceed 100 mA.

The key parameters determining substitution eligibility are: transistor type (NPN), package configuration (SOT-323), operating temperature range, transition frequency, and power rating. Current and voltage ratings must equal or exceed circuit requirements.

Parameter Comparison

Part Number Manufacturer Ic (Max) Vce Breakdown (Max) Power (Max) fT hFE (Min) Package Status
MMSS8050W-J-TP Micro Commercial Co 1.5 A 25 V 200 mW 100 MHz 120 @ 100mA, 1V SOT-323 Last Time Buy
MMSS8050W-H-TP Micro Commercial Co 1.5 A 25 V 200 mW 100 MHz 120 @ 100mA, 1V SOT-323 Active
MMSS8050W-L-TP Micro Commercial Co 1.5 A 25 V 200 mW 100 MHz 120 @ 100mA, 1V SOT-323 Active
BC848AW RFG Taiwan Semiconductor Corporation 100 mA 30 V 200 mW 100 MHz 110 @ 2mA, 5V SOT-323 Active
BC848BW RFG Taiwan Semiconductor Corporation 100 mA 30 V 200 mW 100 MHz 200 @ 2mA, 5V SOT-323 Active
BC848CW RFG Taiwan Semiconductor Corporation 100 mA 30 V 200 mW 100 MHz 420 @ 2mA, 5V SOT-323 Active
BC849AW RFG Taiwan Semiconductor Corporation 100 mA 30 V 200 mW 100 MHz 110 @ 2mA, 5V SOT-323 Active
BC849BW RFG Taiwan Semiconductor Corporation 100 mA 30 V 200 mW 100 MHz 200 @ 2mA, 5V SOT-323 Active
BC849CW RFG Taiwan Semiconductor Corporation 100 mA 30 V 200 mW 100 MHz 420 @ 2mA, 5V SOT-323 Active

Engineering Selection Recommendations

For Direct Substitution (Identical Electrical Performance):

MMSS8050W-H-TP and MMSS8050W-L-TP are parametric equivalents to MMSS8050W-J-TP. Both parts are manufactured by Micro Commercial Co with Active product status, ensuring long-term availability. These parts maintain identical electrical specifications and are suitable for direct replacement in existing designs without circuit modification. MMSS8050W-H-TP provides 1050 pieces in stock inventory, while MMSS8050W-L-TP provides 685 pieces.

For Current-Limited Applications (100 mA Maximum):

BC848 and BC849 series transistors from Taiwan Semiconductor Corporation are suitable for applications where circuit current requirements do not exceed 100 mA. These parts offer higher collector-emitter breakdown voltage (30 V versus 25 V), providing additional voltage margin. All BC848 and BC849 variants are ROHS3 Compliant with Moisture Sensitivity Level 1 (Unlimited). Selection among BC848AW RFG, BC848BW RFG, BC848CW RFG, BC849AW RFG, BC849BW RFG, and BC849CW RFG depends on required DC current gain characteristics, with hFE values ranging from 110 to 420 at specified test conditions.

All substitute parts share REACH Unaffected status and EAR99 ECCN classification with the main part.

Frequently Asked Questions (FAQ)

Q: Can MMSS8050W-H-TP and MMSS8050W-L-TP be used interchangeably with MMSS8050W-J-TP?

A: Yes. MMSS8050W-H-TP and MMSS8050W-L-TP are parametric equivalents with identical electrical specifications. Both parts maintain 1.5 A maximum collector current, 25 V collector-emitter breakdown voltage, 200 mW power dissipation, and 100 MHz transition frequency. Direct substitution is supported without circuit modification.

Q: What is the primary difference between MMSS8050W-J-TP and BC848/BC849 series parts?

A: The primary difference is maximum collector current. MMSS8050W-J-TP supports 1.5 A, while BC848 and BC849 series parts support 100 mA maximum. BC848/BC849 parts also feature 30 V collector-emitter breakdown voltage compared to 25 V for MMSS8050W-J-TP. BC848/BC849 substitution is appropriate only for applications with collector current requirements not exceeding 100 mA.

Q: Are BC848 and BC849 parts interchangeable with each other?

A: BC848 and BC849 series parts share identical electrical specifications including maximum collector current (100 mA), collector-emitter breakdown voltage (30 V), power dissipation (200 mW), and transition frequency (100 MHz). The primary distinction is DC current gain (hFE) grading within each series (A, B, C variants). Selection depends on specific circuit gain requirements.

Q: What does the suffix designation (W, RFG) indicate?

A: The suffix designations indicate manufacturing and packaging specifications. MMSS8050W-J-TP, MMSS8050W-H-TP, and MMSS8050W-L-TP use "W" designation with different tape codes (J, H, L). BC848 and BC849 parts use "W RFG" designation indicating Tape & Reel (TR) packaging format. All parts use SOT-323 package configuration.

Q: Can MMSS8050W-J-TP be replaced with BC848CW RFG in a high-current application?

A: No. BC848CW RFG supports maximum collector current of 100 mA, while MMSS8050W-J-TP supports 1.5 A. For applications requiring collector currents above 100 mA, use MMSS8050W-H-TP or MMSS8050W-L-TP as direct substitutes.

Q: What is the significance of Last Time Buy status for MMSS8050W-J-TP?

A: Last Time Buy status indicates that MMSS8050W-J-TP production has been discontinued. For new designs or long-term procurement, MMSS8050W-H-TP or MMSS8050W-L-TP are recommended as they maintain Active product status and ensure continued availability.

Q: Are all substitute parts RoHS compliant?

A: MMSS8050W-J-TP, MMSS8050W-H-TP, and MMSS8050W-L-TP do not specify RoHS status in provided data. BC848 and BC849 series parts are ROHS3 Compliant. Verify RoHS compliance requirements with specific application standards before final part selection.

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