MMRF5017HSR5 Equivalent & Substitute Parts

Part Overview

The MMRF5017HSR5 is an RF MOSFET HEMT device manufactured by NXP USA Inc., designed for high-frequency applications spanning 30MHz to 2.2GHz with 125W output power and 18.4dB gain. This component operates at 50V test voltage with a rated voltage of 150V and is packaged in the NI-400S-2S surface mount configuration.

The MMRF5017HSR5 is classified as obsolete. Identifying equivalent substitute parts is necessary to maintain design continuity, ensure supply chain reliability, and support ongoing production requirements for systems utilizing this RF MOSFET technology.

Substiute Parts

MMRF5017HSR5

NXP USA Inc.In Stock: 753MMRF5017HSR5 Datasheet

Current PartRFQ

MMRF5018HSR5

NXP USA Inc.In Stock: 731MMRF5018HSR5 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the MMRF5017HSR5 is determined by alignment across the following critical parameters:

Electrical Compatibility Criteria:

• Output power rating (125W)
• Frequency range coverage (minimum 30MHz to 2.2GHz overlap)
• Gain performance (18.4dB reference)
• Voltage ratings (test and rated voltage compatibility)

Mechanical & Packaging Criteria:

• Surface mount mounting type
• NI-400S package family compatibility
• Supplier device package designation

Regulatory & Compliance Criteria:

• RoHS3 compliance
• REACH status alignment
• ECCN classification (EAR99)

The MMRF5018HSR5 qualifies as a manufacturer-recommended substitute based on these parameters, despite technology differentiation (GaN versus HEMT) and minor specification variations.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: MMRF5018HSR5

The MMRF5018HSR5 is the manufacturer-recommended substitute for the obsolete MMRF5017HSR5. Selection of this substitute is supported by the following engineering factors:

Product Status Alignment: The MMRF5018HSR5 maintains active product status, ensuring ongoing availability and manufacturer support. This addresses the obsolescence constraint of the original MMRF5017HSR5.

Compliance & Certification: Both parts maintain ROHS3 compliance and REACH unaffected status, ensuring regulatory continuity in applications subject to environmental and hazardous substance restrictions. Both components carry EAR99 ECCN classification.

Electrical Performance: Output power rating remains constant at 125W. Frequency range coverage extends from 1MHz to 2.7GHz, providing broader low-frequency capability and maintaining coverage of the original 30MHz to 2.2GHz specification band. Gain specification decreases from 18.4dB to 17.3dB, representing a 1.1dB reduction. Rated voltage decreases from 150V to 125V.

Packaging & Mounting: Both components utilize surface mount technology within the NI-400S package family. Package designations differ (NI-400S-2S versus NI-400S-2SA), reflecting minor physical or electrical configuration variations within the same package series. Packaging format differs (Tray versus Tape & Reel), which affects handling and assembly processes but not electrical compatibility.

Technology Differentiation: The substitute employs GaN (Gallium Nitride) technology versus the original HEMT technology. This represents a material and process technology change that may introduce performance characteristics beyond the provided parameter set.

Frequently Asked Questions (FAQ)

Q1: Can the MMRF5018HSR5 directly replace the MMRF5017HSR5 in existing PCB designs?

A: Package family compatibility (NI-400S series) and surface mount mounting type support direct PCB footprint replacement. However, the package designation change (NI-400S-2S to NI-400S-2SA) requires verification of physical dimensions and pin configuration alignment with your specific PCB layout. Consult detailed package drawings from NXP USA Inc. for confirmation.

Q2: What is the impact of the 1.1dB gain reduction when substituting MMRF5018HSR5 for MMRF5017HSR5?

A: Gain specification decreases from 18.4dB to 17.3dB. This parameter difference must be evaluated within your circuit design context. Gain compensation through external circuit adjustments may be necessary depending on system-level performance requirements.

Q3: Does the rated voltage reduction from 150V to 125V affect circuit compatibility?

A: The rated voltage specification decreases from 150V to 125V. Applications operating at voltages exceeding 125V require re-evaluation of the MMRF5018HSR5 for suitability. Verify that your operating voltage remains within the 125V maximum rating of the substitute part.

Q4: Are there frequency range implications when substituting these parts?

A: The MMRF5018HSR5 extends frequency coverage to 1MHz (versus 30MHz minimum on the original), providing broader low-frequency capability. Upper frequency limit increases to 2.7GHz (versus 2.2GHz). Both frequency bands encompass the original specification range, supporting direct substitution from a frequency perspective.

Q5: What is the significance of the technology change from HEMT to GaN?

A: The substitute employs GaN technology instead of HEMT. This represents a fundamental material and process technology change. While both are RF MOSFET technologies, GaN devices may exhibit different thermal characteristics, efficiency profiles, and harmonic behavior. Detailed device datasheets from NXP USA Inc. should be consulted for technology-specific performance characteristics.

Q6: Does packaging format change (Tray to Tape & Reel) affect electrical performance?

A: Packaging format (Tray versus Tape & Reel) affects component handling, storage, and assembly processes but does not alter electrical performance or device specifications. Selection between packaging formats depends on manufacturing and assembly requirements.

Q7: Are both parts compliant with the same regulatory standards?

A: Yes. Both MMRF5017HSR5 and MMRF5018HSR5 maintain ROHS3 compliance and REACH unaffected status, ensuring alignment with environmental and hazardous substance regulations. Both carry EAR99 ECCN classification for export control purposes.