MMRF1009HR5 Equivalent & Substitute Parts

Part Overview

The MMRF1009HR5 is an RF MOSFET LDMOS transistor manufactured by NXP USA Inc., designed for high-frequency RF applications operating at 1.03 GHz. This device delivers 500W output power with 19.7 dB gain and operates at 50V test voltage with 200 mA test current. The part is packaged in SOT-957A (NI-780H-2L) configuration and is mounted as a chassis mount component.

The MMRF1009HR5 is classified as obsolete. Locating equivalent substitute parts is necessary to maintain design continuity and ensure component availability for production and field service applications.

Substiute Parts

MMRF1009HR5
NXP USA Inc.In Stock: 1181MMRF1009HR5 Datasheet
MMRF1009HR5
Current Part
AFV10700HR5
NXP USA Inc.In Stock: 1186AFV10700HR5 Datasheet
AFV10700HR5
MFR Recommended

Key Parameters

Parameter Value
Manufacturer NXP USA Inc.
Category Transistors, FETs, MOSFETs
Technology LDMOS
Frequency 1.03 GHz
Gain 19.7 dB
Voltage - Test 50 V
Current - Test 200 mA
Power - Output 500 W
Voltage - Rated 110 V
Package / Case SOT-957A
Mounting Type Chassis Mount
RoHS Status ROHS3 Compliant
REACH Status REACH Unaffected
ECCN EAR99

Substitute Part Grouping Explanation

Substitution of the MMRF1009HR5 is determined by the following critical parameters:

Technology Match: Both the main part and substitute must utilize LDMOS technology for RF applications.

Frequency Compatibility: Operating frequency must align with the 1.03 GHz specification or operate within a compatible frequency band.

Voltage Specifications: Test voltage (50V) and rated voltage (110V) establish the electrical operating envelope.

Power Output Capability: The substitute must deliver equivalent or greater power output (500W baseline).

Gain Performance: Gain specification (19.7 dB) defines RF amplification characteristics.

Package and Mounting: Physical form factor and chassis mount configuration must be compatible with the original design.

Compliance Requirements: RoHS3 compliance and REACH unaffected status must be maintained.

The AFV10700HR5 qualifies as a substitute based on matching technology, voltage class, frequency band, mounting type, and regulatory compliance.

Parameter Comparison

Parameter MMRF1009HR5 AFV10700HR5
Manufacturer NXP USA Inc. NXP USA Inc.
Category Transistors, FETs, MOSFETs Transistors, FETs, MOSFETs
Technology LDMOS LDMOS
Frequency 1.03 GHz 1.03 GHz ~ 1.09 GHz
Gain 19.7 dB 19.2 dB
Voltage - Test 50 V 50 V
Current - Test 200 mA 100 mA
Power - Output 500 W 770 W
Voltage - Rated 110 V 105 V
Mounting Type Chassis Mount Chassis Mount
Package / Case SOT-957A NI-780-4
RoHS Status ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected
ECCN EAR99 EAR99
Product Status Obsolete Active

Engineering Selection Recommendations

The AFV10700HR5 is the qualified substitute for the obsolete MMRF1009HR5. Selection of this substitute is supported by the following factors:

Product Status: The AFV10700HR5 maintains active product status, ensuring ongoing availability and supply chain continuity compared to the obsolete MMRF1009HR5.

Regulatory Compliance: Both parts maintain ROHS3 compliance and REACH unaffected status, satisfying environmental and regulatory requirements without modification to existing designs.

Export Classification: Both parts carry EAR99 classification, maintaining consistent export control compliance.

Electrical Compatibility: The AFV10700HR5 operates at identical test voltage (50V) and within the same frequency band (1.03 GHz ~ 1.09 GHz), with comparable gain performance (19.2 dB versus 19.7 dB).

Power Performance: The AFV10700HR5 delivers 770W output power, exceeding the 500W specification of the original part, providing enhanced performance margin.

Mounting Configuration: Both parts utilize chassis mount configuration, maintaining mechanical compatibility with existing PCB layouts and thermal management systems.

Frequently Asked Questions (FAQ)

Q: Can the AFV10700HR5 directly replace the MMRF1009HR5 in existing designs?

A: The AFV10700HR5 is electrically and mechanically compatible based on matching technology (LDMOS), voltage class (50V test), frequency band (1.03 GHz), and mounting type (chassis mount). However, package differences exist: MMRF1009HR5 uses SOT-957A while AFV10700HR5 uses NI-780-4. PCB layout verification is required.

Q: What are the key differences between these two parts?

A: The AFV10700HR5 provides higher power output (770W versus 500W), operates across a wider frequency range (1.03-1.09 GHz versus 1.03 GHz), and maintains active product status. Test current is lower (100 mA versus 200 mA), and rated voltage is slightly lower (105V versus 110V).

Q: Why is the MMRF1009HR5 obsolete?

A: Product obsolescence is determined by manufacturer lifecycle decisions. The AFV10700HR5 represents the current active equivalent offering from NXP USA Inc. for this RF MOSFET application class.

Q: Are there compliance concerns with substitution?

A: Both parts maintain identical RoHS3 compliance and REACH unaffected status. No compliance barriers exist for substitution.

Q: What packaging considerations apply?

A: The original MMRF1009HR5 uses SOT-957A (NI-780H-2L) packaging, while the substitute AFV10700HR5 uses NI-780-4 packaging. Physical dimensions and pin configurations differ. PCB redesign may be necessary to accommodate the different package form factor.

Q: Is the gain difference significant?

A: The AFV10700HR5 provides 19.2 dB gain compared to 19.7 dB for the MMRF1009HR5, representing a 0.5 dB difference. This falls within typical RF amplifier design tolerances.

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