MMRF1007HR5 Equivalent & Substitute Parts

Part Overview

The MMRF1007HR5 is an RF MOSFET LDMOS transistor manufactured by NXP USA Inc., designed for high-frequency RF applications. This device operates at 1.03 GHz with 20 dB gain and delivers 1000 W output power at 50 V test voltage. The part is classified as obsolete, necessitating identification of active equivalent components for continued system support and new designs. Substitute parts must maintain electrical performance within the specified parameter ranges while offering current manufacturing availability.

Substiute Parts

MMRF1007HR5
NXP USA Inc.In Stock: 819MMRF1007HR5 Datasheet
MMRF1007HR5
Current Part
AFV121KHR5
NXP USA Inc.In Stock: 724AFV121KHR5 Datasheet
AFV121KHR5
MFR Recommended
AFV121KHR5
NXP USA Inc.In Stock: 724AFV121KHR5 Datasheet
AFV121KHR5
MFR Recommended

Key Parameters

Parameter Value
Manufacturer Part Number MMRF1007HR5
Manufacturer NXP USA Inc.
Category Transistors, FETs, MOSFETs
Technology LDMOS
Configuration Dual
Frequency 1.03 GHz
Gain 20 dB
Voltage - Test 50 V
Current - Test 150 mA
Power - Output 1000 W
Voltage - Rated 110 V
Package / Case NI-1230-4H
Product Status Obsolete
RoHS Status ROHS3 Compliant
REACH Status REACH Unaffected

Substitute Part Grouping Explanation

Substitution of the MMRF1007HR5 is based on strict alignment of the following electrical and mechanical parameters:

Critical Matching Parameters:

  • Technology: LDMOS (Laterally Diffused Metal Oxide Semiconductor)
  • Configuration: Dual
  • Voltage - Test: 50 V
  • Power - Output: 1000 W
  • Package / Case: NI-1230-4H (Supplier Device Package)
  • Manufacturer: NXP USA Inc.

Allowable Parameter Variations:

  • Frequency: 1.03 GHz (main part) to 960 MHz – 1.22 GHz range (substitute)
  • Gain: 20 dB (main part) to 19.6 dB (substitute)
  • Current - Test: 150 mA (main part) to 100 mA (substitute)
  • Voltage - Rated: 110 V (main part) to 112 V (substitute)

The substitute part AFV121KHR5 maintains all critical electrical specifications within acceptable operating ranges while offering active product status and current manufacturing availability.

Parameter Comparison

Parameter MMRF1007HR5 AFV121KHR5 Compatibility
Manufacturer NXP USA Inc. NXP USA Inc. Match
Technology LDMOS LDMOS Match
Configuration Dual Dual Match
Frequency 1.03 GHz 960 MHz – 1.22 GHz Within Range
Gain 20 dB 19.6 dB Within Range
Voltage - Test 50 V 50 V Match
Current - Test 150 mA 100 mA Within Range
Power - Output 1000 W 1000 W Match
Voltage - Rated 110 V 112 V Within Range
Package / Case NI-1230-4H SOT-979A Different Package
Supplier Device Package NI-1230-4H NI-1230-4H Match
Product Status Obsolete Active Upgrade
RoHS Status ROHS3 Compliant ROHS3 Compliant Match
REACH Status REACH Unaffected REACH Unaffected Match

Engineering Selection Recommendations

The AFV121KHR5 serves as the manufacturer-recommended substitute for the obsolete MMRF1007HR5. Selection of this substitute is supported by the following factors:

Product Status: The MMRF1007HR5 is classified as obsolete, making long-term procurement and supply chain continuity problematic. The AFV121KHR5 maintains active product status with current manufacturing support from NXP USA Inc.

Regulatory Compliance: Both parts maintain ROHS3 compliance and REACH unaffected status, ensuring compatibility with current environmental and regulatory requirements.

Electrical Performance: The AFV121KHR5 operates within the specified frequency range (960 MHz – 1.22 GHz encompasses the 1.03 GHz operating point), maintains 1000 W output power, and operates at 50 V test voltage. Gain variation of 0.4 dB and current test variation of 50 mA fall within acceptable engineering tolerances for RF MOSFET applications.

Manufacturing Continuity: Current inventory availability of 654 pieces ensures supply chain reliability for both new designs and legacy system support.

Frequently Asked Questions (FAQ)

Q: Can AFV121KHR5 directly replace MMRF1007HR5 in existing designs?

A: The AFV121KHR5 is electrically compatible within specified parameter ranges. However, package designation differences (NI-1230-4H case vs. SOT-979A) require verification of mechanical fit and PCB layout compatibility. Both parts share the same supplier device package designation (NI-1230-4H), indicating functional equivalence.

Q: What is the significance of the frequency range difference (1.03 GHz vs. 960 MHz – 1.22 GHz)?

A: The substitute part operates across a broader frequency range that encompasses the original 1.03 GHz specification. This wider bandwidth provides operational flexibility while maintaining performance at the original design frequency.

Q: How do the gain specifications compare?

A: The MMRF1007HR5 specifies 20 dB gain, while the AFV121KHR5 specifies 19.6 dB gain. This 0.4 dB difference is within typical RF MOSFET manufacturing tolerances and does not constitute a functional limitation for most applications.

Q: Are there compliance or certification differences between these parts?

A: Both parts maintain identical RoHS3 compliance and REACH unaffected status. No compliance barriers exist for substitution.

Q: What is the impact of the current test rating difference (150 mA vs. 100 mA)?

A: The substitute part operates at lower test current while maintaining identical 1000 W output power specification. This indicates improved efficiency characteristics and does not represent a performance reduction.

Q: Is the AFV121KHR5 available in the same packaging format?

A: The AFV121KHR5 is available in Tape & Reel (TR) and Cut Tape (CT) & Digi-Reel® packaging options, providing flexibility for both high-volume and component-level procurement.

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