MMFT107T1 N-Channel MOSFET 200V 250mA Equivalent & Substitute Parts

Part Overview

The MMFT107T1 is an N-Channel MOSFET manufactured by onsemi, rated for 200V drain-to-source voltage with 250mA continuous drain current in a surface mount SOT-223 package. This device is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing production and maintenance applications. Substitute parts must maintain electrical compatibility across voltage, current, and thermal characteristics while accommodating the same physical package footprint.

Substiute Parts

MMFT107T1

onsemiIn Stock: 2402MMFT107T1 Datasheet

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BSP126,115

Nexperia USA Inc.In Stock: 3923BSP126,115 Datasheet

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BSP126,135

Nexperia USA Inc.In Stock: 16715BSP126,135 Datasheet

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ZVNL120GTA

Diodes IncorporatedIn Stock: 2564ZVNL120GTA Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the MMFT107T1 is determined by the following criteria:

Mandatory Compatibility Parameters:

• FET Type: N-Channel topology
• Package: SOT-223 (TO-261-4, TO-261AA) for direct PCB replacement
• Mounting Type: Surface Mount
• Moisture Sensitivity Level: MSL 1 or equivalent

Electrical Performance Parameters:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 200V
• Continuous Drain Current (Id): Must equal or exceed 250mA
• On-State Resistance (Rds On): Lower values indicate improved performance; substitutes with reduced Rds On provide enhanced efficiency
• Gate-Source Threshold Voltage (Vgs(th)): Must be compatible with existing gate drive circuitry
• Input Capacitance (Ciss): Affects switching characteristics; higher values increase gate charge requirements

Substitute parts BSP126,115 and BSP126,135 (Nexperia USA Inc.) and ZVNL120GTA (Diodes Incorporated) meet or exceed the electrical specifications of the MMFT107T1 while maintaining SOT-223 package compatibility. These alternatives provide equal or superior voltage ratings, current capacity, and thermal performance.

Parameter Comparison

Engineering Selection Recommendations

For Direct Replacement in Existing Designs:

ZVNL120GTA (Diodes Incorporated) is the primary substitute for the MMFT107T1. This device maintains identical 200V Vdss rating and exceeds the 250mA current requirement with 320mA continuous drain current. The ZVNL120GTA carries Active product status and ROHS3 compliance, ensuring long-term availability and regulatory alignment. The lower gate threshold voltage (1.5V vs. 3V) and reduced on-state resistance (10Ω vs. 14Ω) provide improved gate drive efficiency and reduced conduction losses.

For New Design Implementations:

BSP126,135 (Nexperia USA Inc.) offers superior electrical performance with 250V Vdss rating, 375mA current capacity, and 5Ω on-state resistance. Although classified as Not For New Designs, this part provides enhanced thermal performance (1.5W power dissipation) and lower gate threshold voltage (2V). The higher input capacitance (120pF) requires consideration in high-frequency switching applications.

BSP126,115 (Nexperia USA Inc.) provides identical electrical specifications to BSP126,135 with equivalent performance characteristics and compliance ratings.

Compliance Considerations:

All substitute parts are ROHS3 compliant and REACH unaffected, addressing regulatory requirements absent in the obsolete MMFT107T1. The ZVNL120GTA Active status provides the longest projected supply availability.

Frequently Asked Questions (FAQ)

Q: Can ZVNL120GTA directly replace MMFT107T1 in existing PCB layouts?

A: Yes. Both devices use SOT-223 (TO-261-4, TO-261AA) packaging with identical pin configurations and footprints. Direct PCB substitution is supported without layout modifications.

Q: What is the significance of the lower Vgs(th) in ZVNL120GTA (1.5V vs. 3V)?

A: The lower gate threshold voltage reduces the minimum gate drive voltage required for device turn-on. This improves compatibility with lower-voltage gate drive circuits and reduces gate charge energy requirements, resulting in faster switching transitions and lower power dissipation in the gate drive circuit.

Q: How does the higher input capacitance (Ciss) of BSP126 variants affect circuit performance?

A: Higher input capacitance increases the total gate charge (Qg) required for switching transitions. In high-frequency applications, this increases gate drive power dissipation and may slow switching speed. For low-frequency or DC applications, this effect is negligible.

Q: Why is ZVNL120GTA recommended over BSP126 variants despite lower current rating?

A: ZVNL120GTA maintains the original 200V Vdss specification and carries Active product status, ensuring long-term availability. The 320mA current rating exceeds the MMFT107T1 requirement of 250mA. Active status provides superior supply chain continuity compared to Not For New Designs classification.

Q: Are all substitute parts MSL 1 rated?

A: Yes. All listed substitutes carry MSL 1 (Unlimited) moisture sensitivity rating, matching the MMFT107T1 specification and eliminating moisture-related handling restrictions.

Q: What is the impact of reduced on-state resistance in substitute parts?

A: Lower Rds On values reduce conduction losses (I²R heating) during device operation. ZVNL120GTA (10Ω) and BSP126 variants (5Ω) provide improved thermal efficiency compared to MMFT107T1 (14Ω), reducing junction temperature rise and extending device reliability in thermally constrained applications.

Q: Can BSP126,115 and BSP126,135 be used interchangeably?

A: Yes. Both parts are manufactured by Nexperia USA Inc. with identical electrical specifications, package, and compliance ratings. Selection between these variants is based on inventory availability and supply chain considerations.