MMDF3N04HDR2G Equivalent & Substitute Parts

Part Overview

The MMDF3N04HDR2G is a dual N-channel MOSFET array manufactured by onsemi, rated for 40V drain-to-source voltage with 3.4A continuous drain current. This component is housed in an 8-SOIC surface mount package and features logic level gate operation suitable for switching applications. The part is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Configuration	2 N-Channel (Dual)	—
Drain to Source Voltage (Vdss)	40V	V
Current - Continuous Drain (Id) @ 25°C	3.4A	A
Rds On (Max) @ Id, Vgs	80mOhm @ 3.4A, 10V	mOhm
Vgs(th) (Max) @ Id	3V @ 250µA	V
Gate Charge (Qg) (Max) @ Vgs	28nC @ 10V	nC
Input Capacitance (Ciss) (Max) @ Vds	900pF @ 32V	pF
Power - Max	1.39W	W
Operating Temperature	-55°C ~ 150°C	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	8-SOIC (0.154", 3.90mm Width)	—
Technology	MOSFET (Metal Oxide)	—
FET Feature	Logic Level Gate	—

Substitute Part Grouping Explanation

Substitution eligibility for the MMDF3N04HDR2G is determined by the following critical parameters:

Primary Substitution Criteria:

Configuration: Dual N-channel MOSFET array
Package Type: 8-SOIC surface mount form factor
Drain-to-Source Voltage (Vdss): Minimum 40V rating
Continuous Drain Current (Id): Minimum 3.4A @ 25°C
Gate Threshold Voltage (Vgs(th)): Logic level operation (≤3V @ 250µA)
Operating Temperature Range: -55°C to 150°C

Identified Substitutes:

The FDS6930B (onsemi) and SH8K25GZ0TB (Rohm Semiconductor) are listed as equivalent alternatives. Both devices maintain the dual N-channel configuration and 8-SOIC package footprint. However, each substitute exhibits distinct electrical characteristics that affect application suitability:

FDS6930B: Reduced Vdss rating (30V) with enhanced current capability (5.5A) and lower on-resistance (38mOhm). Suitable for applications where voltage headroom is not critical but current handling and efficiency are prioritized.
SH8K25GZ0TB: Maintains 40V Vdss rating with increased current capability (5.2A) and comparable on-resistance (85mOhm). Provides voltage compatibility with the original part while offering improved current performance.

Parameter Comparison

Parameter	MMDF3N04HDR2G	FDS6930B	SH8K25GZ0TB	Unit
Manufacturer	onsemi	onsemi	Rohm Semiconductor	—
Configuration	2 N-Channel (Dual)	2 N-Channel (Dual)	2 N-Channel (Dual)	—
Drain to Source Voltage (Vdss)	40V	30V	40V	V
Current - Continuous Drain (Id) @ 25°C	3.4A	5.5A	5.2A (Ta)	A
Rds On (Max) @ Id, Vgs	80mOhm @ 3.4A, 10V	38mOhm @ 5.5A, 10V	85mOhm @ 5.2A, 10V	mOhm
Vgs(th) (Max) @ Id	3V @ 250µA	3V @ 250µA	2.5V @ 1mA	V
Gate Charge (Qg) (Max) @ Vgs	28nC @ 10V	3.8nC @ 5V	1.7nC @ 5V	nC
Input Capacitance (Ciss) (Max) @ Vds	900pF @ 32V	412pF @ 15V	100pF @ 10V	pF
Power - Max	1.39W	900mW	2W (Ta)	W
Operating Temperature	-55°C ~ 150°C	-55°C ~ 150°C	150°C	°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	—
Package / Case	8-SOIC	8-SOIC	8-SOIC	—
Product Status	Obsolete	Last Time Buy	Not For New Designs	—
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

FDS6930B Selection Criteria:

The FDS6930B is suitable for applications where the circuit operates at voltages below 30V and prioritizes efficiency and current handling. This part carries Last Time Buy status, indicating limited future availability. The FDS6930B demonstrates superior on-resistance (38mOhm) and significantly lower gate charge (3.8nC), reducing switching losses. RoHS3 compliance supports environmental and regulatory requirements for new designs. However, the reduced Vdss rating (30V) restricts use in circuits requiring 40V headroom.

SH8K25GZ0TB Selection Criteria:

The SH8K25GZ0TB maintains voltage compatibility with the original MMDF3N04HDR2G at 40V Vdss while providing enhanced current capability (5.2A). This part is classified as Not For New Designs, indicating it is available for legacy system support only. The SH8K25GZ0TB exhibits the lowest gate charge (1.7nC) and input capacitance (100pF) among the three devices, supporting high-frequency switching applications. RoHS3 compliance is confirmed. The 8-SOP package designation indicates potential footprint variation despite the stated 8-SOIC case dimension.

Voltage Compatibility Consideration:

Applications requiring full 40V operation must use either the original MMDF3N04HDR2G or the SH8K25GZ0TB. The FDS6930B is not suitable for circuits with voltage requirements exceeding 30V.

Frequently Asked Questions (FAQ)

Q: Can the FDS6930B directly replace the MMDF3N04HDR2G in all applications?

A: No. The FDS6930B has a maximum Vdss rating of 30V compared to the MMDF3N04HDR2G's 40V rating. Direct substitution is only valid for circuits operating at 30V or below. Circuits requiring 40V operation must use the SH8K25GZ0TB or equivalent 40V-rated alternatives.

Q: What is the significance of the product status classifications (Obsolete, Last Time Buy, Not For New Designs)?

A: Product status indicates lifecycle stage and availability. Obsolete parts are no longer manufactured. Last Time Buy parts have limited remaining inventory before discontinuation. Not For New Designs parts are available for legacy support but should not be selected for new product development. These statuses affect long-term supply chain planning and design decisions.

Q: Are the FDS6930B and SH8K25GZ0TB pin-compatible with the MMDF3N04HDR2G?

A: Both substitute parts use the 8-SOIC package with identical 0.154" (3.90mm) width. Pin compatibility is supported by the matching package designation. However, the SH8K25GZ0TB is specified as 8-SOP in the supplier device package field, which may indicate minor package variation. Physical verification is recommended before PCB layout finalization.

Q: How do the on-resistance values affect circuit performance?

A: On-resistance (Rds On) directly impacts power dissipation and heat generation. The FDS6930B exhibits the lowest Rds On at 38mOhm, resulting in reduced power loss during conduction. The MMDF3N04HDR2G and SH8K25GZ0TB have comparable values (80mOhm and 85mOhm respectively). Lower on-resistance improves efficiency in high-current applications and reduces thermal management requirements.

Q: What is the importance of gate charge in MOSFET selection?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge reduces switching losses and allows faster switching speeds. The SH8K25GZ0TB has the lowest gate charge (1.7nC), followed by FDS6930B (3.8nC), and MMDF3N04HDR2G (28nC). Applications with high switching frequencies benefit from lower gate charge values.

Q: Are all three devices RoHS compliant?

A: The FDS6930B and SH8K25GZ0TB are both ROHS3 compliant. The MMDF3N04HDR2G RoHS status is not specified in the provided data. For applications requiring RoHS compliance, the FDS6930B or SH8K25GZ0TB are confirmed suitable alternatives.

Q: What is the operating temperature range difference between these parts?

A: The MMDF3N04HDR2G and FDS6930B both support -55°C to 150°C operation. The SH8K25GZ0TB specifies only 150°C maximum, with no lower temperature limit provided. Applications requiring operation below ambient temperature should confirm the SH8K25GZ0TB's minimum operating temperature with the manufacturer.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message