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MMDF2P02HDR2G Equivalent & Substitute Parts
Part Overview
The MMDF2P02HDR2G is a dual P-channel MOSFET array manufactured by onsemi, designed for surface mount applications in 8-SOIC packaging. This device features logic level gate operation with a maximum drain-source voltage rating of 20V and continuous drain current capability of 3.3A at 25°C. The component is classified as obsolete, necessitating identification of active equivalent parts for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility within the specified parameter ranges while offering current product availability.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 20 | V |
| Current - Continuous Drain (Id) @ 25°C | 3.3 | A |
| Rds On (Max) @ Id, Vgs | 160 mOhm @ 2A, 10V | mOhm |
| Vgs(th) (Max) @ Id | 2 | V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 20 | nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 588 | pF @ 16V |
| Power - Max | 2 | W |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | — |
| Mounting Type | Surface Mount | — |
| Configuration | 2 P-Channel (Dual) | — |
| FET Feature | Logic Level Gate | — |
| Technology | MOSFET (Metal Oxide) | — |
Substitute Part Grouping Explanation
Substitution of the MMDF2P02HDR2G is determined by strict adherence to the following electrical and mechanical parameters:
Mandatory Compatibility Criteria:
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Voltage Rating (Vdss): Substitute parts must maintain the 20V drain-source voltage specification. This parameter is non-negotiable for circuit protection and device reliability.
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Package and Mounting: The 8-SOIC surface mount package with 0.154" (3.90mm) width is required for PCB layout compatibility. Substitute parts must use identical packaging.
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Configuration: Dual P-channel (2 P-Channel) configuration is mandatory. The functional architecture of the device cannot be altered.
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Gate Feature: Logic level gate operation must be preserved to ensure compatibility with standard digital control circuits.
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Current Rating: The continuous drain current (Id) at 25°C must meet or exceed 3.3A. Substitute parts with higher current ratings are acceptable as they provide enhanced performance margin.
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On-Resistance (Rds On): Substitute parts must demonstrate equivalent or superior on-resistance characteristics to ensure thermal performance and power dissipation remain within acceptable limits.
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Operating Temperature Range: The -55°C to 150°C junction temperature range must be maintained.
The NTMD6P02R2G meets all mandatory compatibility criteria while offering improved electrical performance characteristics and active product status.
Parameter Comparison
| Parameter | MMDF2P02HDR2G | NTMD6P02R2G | Unit |
|---|---|---|---|
| Manufacturer | onsemi | onsemi | — |
| Category | Transistors, FETs, MOSFETs | Transistors, FETs, MOSFETs | — |
| Configuration | 2 P-Channel (Dual) | 2 P-Channel (Dual) | — |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | — |
| FET Feature | Logic Level Gate | Logic Level Gate | — |
| Drain to Source Voltage (Vdss) | 20 | 20 | V |
| Current - Continuous Drain (Id) @ 25°C | 3.3 | 4.8 | A |
| Rds On (Max) @ Id, Vgs | 160 mOhm @ 2A, 10V | 33 mOhm @ 6.2A, 4.5V | mOhm |
| Vgs(th) (Max) @ Id | 2 | 1.2 | V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 20 | 35 | nC @ Vgs |
| Input Capacitance (Ciss) (Max) @ Vds | 588 | 1700 | pF @ 16V |
| Power - Max | 2 | 0.75 | W |
| Operating Temperature Range | -55 to 150 | -55 to 150 | °C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | — |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | — |
| Product Status | Obsolete | Active | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | — |
| REACH Status | REACH Unaffected | REACH Unaffected | — |
| ECCN | EAR99 | EAR99 | — |
Engineering Selection Recommendations
NTMD6P02R2G as Primary Substitute:
The NTMD6P02R2G is the qualified substitute for the obsolete MMDF2P02HDR2G. Selection of this part is based on the following engineering factors:
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Product Status: The NTMD6P02R2G maintains active product status with current manufacturing support, ensuring long-term availability and supply chain continuity. The MMDF2P02HDR2G is classified as obsolete, making continued sourcing problematic for production environments.
-
Electrical Compatibility: Both devices share identical voltage ratings (20V Vdss), identical package configuration (8-SOIC), and identical operating temperature range (-55°C to 150°C). The NTMD6P02R2G provides enhanced continuous drain current (4.8A versus 3.3A), delivering superior performance margin for existing circuit designs.
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Regulatory Compliance: Both parts maintain REACH Unaffected status and EAR99 export classification. The NTMD6P02R2G carries RoHS3 compliance certification, meeting current environmental and regulatory requirements for new product designs.
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Moisture Sensitivity: Both devices are classified as MSL 1 (Unlimited), indicating no moisture sensitivity constraints during storage or handling.
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Functional Equivalence: The dual P-channel configuration, logic level gate feature, and metal oxide technology are preserved across both parts, ensuring functional compatibility at the circuit level.
Frequently Asked Questions (FAQ)
Q: Can the NTMD6P02R2G directly replace the MMDF2P02HDR2G in existing designs?
A: Yes. Both devices share identical voltage ratings (20V), identical package configuration (8-SOIC), identical operating temperature range (-55°C to 150°C), and identical functional configuration (dual P-channel with logic level gate). The NTMD6P02R2G provides higher continuous drain current (4.8A versus 3.3A), which is compatible with circuits designed for the MMDF2P02HDR2G.
Q: What are the key differences between these two parts?
A: The primary differences are product status and electrical performance characteristics. The MMDF2P02HDR2G is obsolete, while the NTMD6P02R2G is active. The NTMD6P02R2G offers improved on-resistance (33 mOhm versus 160 mOhm), higher continuous drain current (4.8A versus 3.3A), and lower gate threshold voltage (1.2V versus 2V). The NTMD6P02R2G carries RoHS3 compliance certification.
Q: Are there any package compatibility concerns?
A: No. Both parts use identical 8-SOIC surface mount packaging with 0.154" (3.90mm) width. PCB layouts, footprints, and assembly processes require no modification.
Q: What is the significance of the higher gate charge in the NTMD6P02R2G?
A: The NTMD6P02R2G has higher gate charge (35 nC versus 20 nC), which reflects its enhanced current handling capability. This parameter affects gate drive circuit design but does not prevent substitution in standard logic level gate applications.
Q: Does the higher input capacitance of the NTMD6P02R2G affect circuit performance?
A: The NTMD6P02R2G exhibits higher input capacitance (1700 pF versus 588 pF), which is consistent with its improved current rating and on-resistance characteristics. This parameter may affect switching speed in high-frequency applications but does not prevent functional substitution in standard switching circuits.
Q: Are both parts suitable for new product designs?
A: Only the NTMD6P02R2G is suitable for new product designs. The MMDF2P02HDR2G is obsolete and should not be specified for new designs. The NTMD6P02R2G offers active product status, RoHS3 compliance, and superior electrical performance characteristics.
Q: What certifications and compliance standards apply to these parts?
A: Both parts maintain REACH Unaffected status and EAR99 export classification. The NTMD6P02R2G carries RoHS3 compliance certification. Both parts are classified as MSL 1 (Unlimited) for moisture sensitivity.
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