MMBZ5241B Equivalent & Substitute Parts

Part Overview

The MMBZ5241B is a Zener diode manufactured by onsemi, rated at 11 V nominal with 350 mW maximum power dissipation in a surface mount SOT-23-3 package. This component is classified as obsolete, necessitating identification of equivalent and substitute parts for ongoing design requirements and procurement needs. Active alternatives from multiple manufacturers provide functional equivalence while offering improved availability and compliance status.

Substiute Parts

MMBZ5241B
onsemiIn Stock: 9950MMBZ5241B Datasheet
MMBZ5241B
Current Part
MMBZ5241BLT1G
onsemiIn Stock: 305392MMBZ5241BLT1G Datasheet
MMBZ5241BLT1G
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SZMMBZ5241BLT1G
onsemiIn Stock: 4488SZMMBZ5241BLT1G Datasheet
SZMMBZ5241BLT1G
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BZX84C11-TP
Micro Commercial CoIn Stock: 6322BZX84C11-TP Datasheet
BZX84C11-TP
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CMPZ5241B TR PBFREE
Central Semiconductor CorpIn Stock: 4251CMPZ5241B TR PBFREE Datasheet
CMPZ5241B TR PBFREE
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MMBZ5241B-TP
Micro Commercial CoIn Stock: 873MMBZ5241B-TP Datasheet
MMBZ5241B-TP
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MMBZ5241B-7-F
Diodes IncorporatedIn Stock: 2158MMBZ5241B-7-F Datasheet
MMBZ5241B-7-F
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MMBZ5241BQ-7-F
Diodes IncorporatedIn Stock: 806MMBZ5241BQ-7-F Datasheet
MMBZ5241BQ-7-F
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BZX84B11-TP
Micro Commercial CoIn Stock: 2445BZX84B11-TP Datasheet
BZX84B11-TP
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BZX84C11 TR
Central Semiconductor CorpIn Stock: 1212BZX84C11 TR Datasheet
BZX84C11 TR
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BZX84C11-7-F
Diodes IncorporatedIn Stock: 35119BZX84C11-7-F Datasheet
BZX84C11-7-F
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CZRT55C11-G
Comchip TechnologyIn Stock: 970CZRT55C11-G Datasheet
CZRT55C11-G
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MMBZ5241B_R1_00001
Panjit International Inc.In Stock: 3940MMBZ5241B_R1_00001 Datasheet
MMBZ5241B_R1_00001
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MMBZ5241C-TP
Micro Commercial CoIn Stock: 892MMBZ5241C-TP Datasheet
MMBZ5241C-TP
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Key Parameters

Parameter Value Unit
Voltage - Zener (Nom) 11 V
Tolerance ±5%
Power - Max 350 mW
Impedance (Max) 22 Ohms
Current - Reverse Leakage @ Vr 2 µA @ 8.4 V
Voltage - Forward (Vf) (Max) @ If 900 mV @ 10 mA
Operating Temperature -55 to 150 °C
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3

Substitute Part Grouping Explanation

Substitution of the MMBZ5241B is determined by the following critical parameters: nominal Zener voltage (11 V), tolerance (±5%), maximum power dissipation (350 mW), impedance characteristics (22 Ohms maximum), reverse leakage current (2 µA @ 8.4 V), forward voltage drop (900 mV @ 10 mA), and package configuration (SOT-23-3). Substitute parts must maintain these electrical specifications within the defined tolerances and operate within the specified temperature range.

Substitute parts are grouped into three categories:

Direct Equivalents maintain all electrical parameters and 350 mW power rating: BZX84C11-TP, CMPZ5241B TR PBFREE, MMBZ5241B-TP, and MMBZ5241B-7-F.

Similar Parts with Reduced Power Rating provide 225 mW or 300 mW maximum power dissipation while maintaining voltage and tolerance specifications: MMBZ5241BLT1G, SZMMBZ5241BLT1G, and BZX84C11-7-F. These are suitable for applications where the full 350 mW capability is not required.

Tolerance Variants offer tighter tolerance specifications (±2%) with equivalent power ratings: BZX84B11-TP.

Automotive-Qualified Alternatives include AEC-Q101 certification: SZMMBZ5241BLT1G and MMBZ5241BQ-7-F.

Parameter Comparison

Part Number Manufacturer Vz (V) Tolerance Power (mW) Zzt (Ohms) Ir @ Vr (µA) Vf @ If (mV) Temp Range (°C) Status RoHS
MMBZ5241B onsemi 11 ±5% 350 22 2 @ 8.4 900 @ 10 -55 to 150 Obsolete
MMBZ5241BLT1G onsemi 11 ±5% 225 22 2 @ 8.4 900 @ 10 -65 to 150 Active ROHS3
SZMMBZ5241BLT1G onsemi 11 ±5% 225 22 2 @ 8.4 900 @ 10 -65 to 150 Active ROHS3
BZX84C11-TP Micro Commercial Co 11 ±5% 350 20 0.1 @ 8 900 @ 10 -55 to 150 Active ROHS3
CMPZ5241B TR PBFREE Central Semiconductor Corp 11 ±5% 350 22 2 @ 8.4 900 @ 10 -65 to 150 Active ROHS3
MMBZ5241B-TP Micro Commercial Co 11 ±5% 350 22 2 @ 8.4 900 @ 10 -55 to 150 Active ROHS3
MMBZ5241B-7-F Diodes Incorporated 11 ±5% 350 22 2 @ 8.4 900 @ 10 -65 to 150 Active ROHS3
MMBZ5241BQ-7-F Diodes Incorporated 11 ±5% 350 22 2 @ 8.4 900 @ 10 -65 to 150 Active ROHS3
BZX84B11-TP Micro Commercial Co 11 ±2% 350 20 0.1 @ 8 900 @ 10 -55 to 150 Active ROHS3
BZX84C11 TR Central Semiconductor Corp 11 ±5% 350 20 0.1 @ 8 900 @ 10 -65 to 150 Active ROHS3
BZX84C11-7-F Diodes Incorporated 11 ±5% 300 20 0.1 @ 8 900 @ 10 -65 to 150 Active ROHS3

Engineering Selection Recommendations

For Direct Replacement with Equivalent Specifications:

MMBZ5241B-7-F (Diodes Incorporated) and MMBZ5241B-TP (Micro Commercial Co) provide complete electrical equivalence with 350 mW power rating and ±5% tolerance. Both are active products with ROHS3 compliance. MMBZ5241B-7-F offers extended operating temperature range (-65°C to 150°C) compared to the original part (-55°C to 150°C).

CMPZ5241B TR PBFREE (Central Semiconductor Corp) maintains identical electrical specifications and impedance characteristics with extended temperature range and ROHS3 compliance.

For Applications with Reduced Power Requirements:

MMBZ5241BLT1G (onsemi) and SZMMBZ5241BLT1G (onsemi) provide 225 mW maximum power dissipation. SZMMBZ5241BLT1G includes AEC-Q101 automotive qualification for applications requiring automotive-grade components.

For Tighter Tolerance Requirements:

BZX84B11-TP (Micro Commercial Co) offers ±2% tolerance with 350 mW power rating and active product status with ROHS3 compliance.

For Automotive Applications:

MMBZ5241BQ-7-F (Diodes Incorporated) and SZMMBZ5241BLT1G (onsemi) both carry AEC-Q101 qualification and are suitable for automotive circuit applications.

All recommended substitutes are active products with ROHS3 compliance and REACH unaffected status, ensuring regulatory compliance and long-term availability.

Frequently Asked Questions (FAQ)

Q: Can MMBZ5241BLT1G replace MMBZ5241B in all applications?

A: MMBZ5241BLT1G is electrically equivalent in voltage, tolerance, and forward characteristics but provides 225 mW maximum power dissipation compared to 350 mW in the original part. Substitution is valid only if the application circuit dissipates 225 mW or less. Extended temperature range (-65°C to 150°C) provides additional operational margin.

Q: What is the difference between BZX84C11-TP and BZX84C11-7-F?

A: Both parts maintain 11 V nominal voltage and ±5% tolerance. BZX84C11-TP provides 350 mW maximum power, while BZX84C11-7-F provides 300 mW. Both feature lower impedance (20 Ohms versus 22 Ohms) and lower reverse leakage current (100 nA versus 2 µA) compared to the original MMBZ5241B. Temperature range for BZX84C11-7-F extends to -65°C.

Q: Are all substitute parts available in the same packaging?

A: All substitute parts are packaged in SOT-23-3 (TO-236-3, SC-59) surface mount configuration, maintaining mechanical compatibility with the original MMBZ5241B footprint.

Q: What does AEC-Q101 qualification mean for MMBZ5241BQ-7-F and SZMMBZ5241BLT1G?

A: AEC-Q101 qualification indicates these parts meet automotive industry reliability and quality standards. These parts are suitable for automotive applications where component qualification is required.

Q: Why does BZX84B11-TP have ±2% tolerance instead of ±5%?

A: BZX84B11-TP is a tighter tolerance variant of the 11 V Zener diode family. The ±2% tolerance provides more precise voltage regulation at the cost of potentially higher component cost. It is suitable for applications requiring tighter voltage control.

Q: Can I use MMBZ5241B-7-F in place of the obsolete MMBZ5241B without circuit modifications?

A: Yes. MMBZ5241B-7-F maintains identical electrical specifications (11 V, ±5%, 350 mW, 22 Ohms impedance) and package configuration. The extended temperature range (-65°C to 150°C) provides additional operational margin. No circuit modifications are required.

Q: What is the significance of the reverse leakage current difference between parts?

A: Reverse leakage current affects circuit performance in high-impedance applications. MMBZ5241B and CMPZ5241B TR PBFREE specify 2 µA @ 8.4 V, while BZX84 series parts specify 100 nA @ 8 V. Lower leakage current provides better performance in sensitive analog circuits but both values are acceptable for standard voltage regulation applications.

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