MMBTH81_F080 Equivalent & Substitute Parts

Part Overview

The MMBTH81_F080 is an RF transistor PNP type manufactured by onsemi, designed for radio frequency applications requiring 20V collector-emitter breakdown voltage and 600MHz transition frequency. This surface mount component in SOT-23 packaging delivers 225mW maximum power dissipation with 50mA maximum collector current.

The MMBTH81_F080 carries an obsolete product status. Locating equivalent substitute parts is necessary to maintain design continuity and ensure component availability for production, repair, and field replacement applications.

Substiute Parts

MMBTH81_F080
onsemiIn Stock: 925MMBTH81_F080 Datasheet
MMBTH81_F080
Current Part
MMBTH81
onsemiIn Stock: 15492MMBTH81 Datasheet
MMBTH81
Similar

Key Parameters

Parameter Value Unit
Transistor Type PNP
Voltage - Collector Emitter Breakdown (Max) 20 V
Frequency - Transition 600 MHz
Power - Max 225 mW
Current - Collector (Ic) (Max) 50 mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V
Operating Temperature Range -55 to 150 °C (TJ)
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the MMBTH81_F080 is determined by electrical and mechanical parameter equivalence. The following parameters establish substitution validity:

Electrical Parameters:

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Power - Max: 225mW
  • Current - Collector (Ic) (Max): 50mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Operating Temperature Range: -55°C to 150°C (TJ)

Mechanical Parameters:

  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Mounting Type: Surface Mount
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)

Parts meeting all these criteria are electrically and mechanically interchangeable with the MMBTH81_F080.

Parameter Comparison

Parameter MMBTH81_F080 MMBTH81
Manufacturer onsemi onsemi
Category Transistors, Bipolar (BJT) Transistors, Bipolar (BJT)
Transistor Type PNP PNP
Voltage - Collector Emitter Breakdown (Max) 20V 20V
Frequency - Transition 600MHz 600MHz
Power - Max 225mW 225mW
Current - Collector (Ic) (Max) 50mA 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V 60 @ 5mA, 10V
Operating Temperature Range -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Product Status Obsolete Active

Engineering Selection Recommendations

The MMBTH81_F080 is classified as obsolete. The MMBTH81 is the direct equivalent substitute, carrying active product status from the same manufacturer (onsemi).

Selection Basis:

The MMBTH81 provides identical electrical performance across all specified parameters: 20V collector-emitter breakdown voltage, 600MHz transition frequency, 225mW power dissipation, 50mA maximum collector current, and 60 minimum DC current gain at specified conditions. The operating temperature range (-55°C to 150°C) and mechanical packaging (SOT-23-3 surface mount) are identical.

The MMBTH81 is ROHS3 compliant and carries EAR99 ECCN classification, compared to the obsolete MMBTH81_F080. The substitute part is available in higher inventory quantities (15,400 pieces) with active product status, ensuring long-term supply chain reliability.

Both parts share identical moisture sensitivity level (MSL 1 - Unlimited) and REACH unaffected status, confirming regulatory equivalence.

Frequently Asked Questions (FAQ)

Q: Can the MMBTH81 directly replace the MMBTH81_F080 in existing designs?

A: Yes. The MMBTH81 is electrically and mechanically equivalent to the MMBTH81_F080. All electrical parameters, operating temperature range, and package specifications are identical. The MMBTH81 is the active production equivalent.

Q: What is the difference between MMBTH81_F080 and MMBTH81?

A: The MMBTH81_F080 is an obsolete variant. The MMBTH81 is the current active production part from onsemi with identical electrical and mechanical specifications. The primary difference is product status and availability.

Q: Are there packaging differences between these parts?

A: No. Both parts use identical SOT-23-3 surface mount packaging (also designated TO-236-3 or SC-59). Both are surface mount components with identical footprints and land patterns.

Q: What are the key electrical parameters that define substitution?

A: Substitution is determined by: PNP transistor type, 20V maximum collector-emitter breakdown voltage, 600MHz transition frequency, 225mW maximum power dissipation, 50mA maximum collector current, and 60 minimum DC current gain at 5mA and 10V. All these parameters are identical between the MMBTH81_F080 and MMBTH81.

Q: Is the MMBTH81 RoHS compliant?

A: Yes. The MMBTH81 is ROHS3 compliant. The obsolete MMBTH81_F080 does not carry RoHS certification information.

Q: What is the moisture sensitivity level for these parts?

A: Both parts carry MSL 1 (Unlimited), indicating no moisture sensitivity restrictions for storage or handling.

Q: Are there supply chain advantages to using the MMBTH81 over the MMBTH81_F080?

A: Yes. The MMBTH81 is in active production with 15,400 pieces in stock, compared to the obsolete MMBTH81_F080 with 834 pieces. The active status ensures continued availability and supply chain reliability.

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