MMBTH81_D87Z Equivalent & Substitute Parts

Part Overview

The MMBTH81_D87Z is an RF transistor manufactured by onsemi, classified as a PNP bipolar junction transistor (BJT) in a surface mount SOT-23-3 package. This component is designed for RF applications requiring high-frequency switching and amplification at frequencies up to 600MHz. The MMBTH81_D87Z carries an obsolete product status, which necessitates identification of equivalent substitute components for ongoing design support and procurement continuity.

Substiute Parts

MMBTH81_D87Z
onsemiIn Stock: 1096MMBTH81_D87Z Datasheet
MMBTH81_D87Z
Current Part
MMBTH81
onsemiIn Stock: 15492MMBTH81 Datasheet
MMBTH81
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Key Parameters

Parameter Value
Manufacturer Part Number MMBTH81_D87Z
Manufacturer onsemi
Transistor Type PNP
Package / Case TO-236-3, SC-59, SOT-23-3
Voltage - Collector Emitter Breakdown (Max) 20V
Frequency - Transition 600MHz
Power - Max 225mW
Current - Collector (Ic) (Max) 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution eligibility for the MMBTH81_D87Z is determined by strict equivalence across the following critical parameters:

Electrical Specifications:

  • Transistor Type: PNP configuration
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Power - Max: 225mW
  • Current - Collector (Ic) (Max): 50mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Operating Temperature Range: -55°C ~ 150°C (TJ)

Mechanical Specifications:

  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Mounting Type: Surface Mount

Environmental & Compliance:

  • Moisture Sensitivity Level (MSL): 1 (Unlimited)

Substitute parts must match all electrical and mechanical parameters without deviation. Parts meeting these criteria are classified as direct equivalents suitable for pin-for-pin replacement in existing designs.

Parameter Comparison

Parameter MMBTH81_D87Z (Main Part) MMBTH81 (Substitute)
Manufacturer onsemi onsemi
Transistor Type PNP PNP
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Voltage - Collector Emitter Breakdown (Max) 20V 20V
Frequency - Transition 600MHz 600MHz
Power - Max 225mW 225mW
Current - Collector (Ic) (Max) 50mA 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V 60 @ 5mA, 10V
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Product Status Obsolete Active
RoHS Status Not specified ROHS3 Compliant

Engineering Selection Recommendations

The MMBTH81 (without the _D87Z suffix) serves as the direct equivalent substitute for the obsolete MMBTH81_D87Z. Both components are manufactured by onsemi and share identical electrical and mechanical specifications across all critical parameters.

Key Selection Factors:

  1. Product Status Transition: The MMBTH81_D87Z is classified as obsolete, while the MMBTH81 maintains active product status. This distinction ensures long-term availability and supply chain continuity for new designs and production runs.

  2. Compliance Certification: The substitute part MMBTH81 carries ROHS3 compliance certification, providing enhanced environmental and regulatory alignment for applications subject to RoHS directives.

  3. Packaging Availability: The MMBTH81 is available in Cut Tape (CT) and Digi-Reel® packaging formats, offering flexibility for both prototype and high-volume production environments.

  4. Electrical Equivalence: All electrical parameters—including voltage ratings, frequency response, power dissipation, current handling, and gain characteristics—are identical between the main part and substitute, enabling direct functional replacement without circuit redesign.

  5. Thermal and Environmental Specifications: Operating temperature range and moisture sensitivity levels are equivalent, ensuring compatibility in identical thermal and environmental conditions.

Frequently Asked Questions (FAQ)

Q: Can the MMBTH81 directly replace the MMBTH81_D87Z in existing designs?

A: Yes. The MMBTH81 is a direct equivalent substitute. All electrical specifications, mechanical dimensions, and pin configurations are identical. No circuit modifications are required for pin-for-pin replacement.

Q: What is the significance of the _D87Z suffix in the part number?

A: The _D87Z suffix denotes a specific manufacturing date code and packaging variant. The base part number MMBTH81 encompasses multiple packaging and date code variants. The substitute MMBTH81 maintains the same electrical and mechanical specifications regardless of date code designation.

Q: Are there any compliance differences between the MMBTH81_D87Z and MMBTH81?

A: The substitute part MMBTH81 carries ROHS3 compliance certification. Both parts maintain identical REACH status (REACH Unaffected) and moisture sensitivity levels (MSL 1 - Unlimited). The ROHS3 compliance of the substitute part provides enhanced regulatory alignment for applications subject to RoHS directives.

Q: What packaging options are available for the substitute part?

A: The MMBTH81 substitute is available in Cut Tape (CT) and Digi-Reel® packaging formats. Both formats maintain the SOT-23-3 surface mount package configuration and are suitable for automated assembly processes.

Q: Is the operating temperature range identical between the two parts?

A: Yes. Both the MMBTH81_D87Z and MMBTH81 operate across the identical temperature range of -55°C to 150°C (junction temperature). No thermal performance differences exist between the parts.

Q: What is the current inventory status for the substitute part?

A: The MMBTH81 substitute maintains active product status with 15,400 pieces in stock, ensuring reliable availability for procurement. The obsolete MMBTH81_D87Z has 1,004 pieces remaining in inventory.

Q: Are the RF performance characteristics identical?

A: Yes. Both parts share identical transition frequency (600MHz), power dissipation (225mW), and DC current gain specifications (60 @ 5mA, 10V). RF performance in circuit applications will be equivalent.

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