MMBTH24 Equivalent & Substitute Parts

Part Overview

The MMBTH24 is an RF transistor NPN type manufactured by onsemi, rated for 30V collector-emitter breakdown voltage with a 400MHz transition frequency and 225mW maximum power dissipation in a surface mount SOT-23-3 package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity. The MMBTH24 operates across a temperature range of -55°C to 150°C and is suitable for RF applications requiring moderate frequency performance in compact form factors.

Key Parameters

Parameter	MMBTH24 Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	30	V
Frequency - Transition	400	MHz
Power - Max	225	mW
Current - Collector (Ic) (Max)	50	mA
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 8mA, 10V	—
Operating Temperature	-55 to 150	°C
Package / Case	SOT-23-3	—
Mounting Type	Surface Mount	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the MMBTH24 is determined by the following critical parameters:

Primary Compatibility Criteria:

Transistor Type: NPN (required match)
Package / Case: SOT-23-3 (required match for PCB compatibility)
Voltage - Collector Emitter Breakdown (Max): 30V minimum (MMBTH24 rated at 30V)
Operating Temperature Range: -55°C to 150°C (required match)
Mounting Type: Surface Mount (required match)

Secondary Performance Criteria:

Frequency - Transition: 400MHz or higher (MMBTH24 baseline)
Current - Collector (Ic) (Max): 50mA or higher (MMBTH24 baseline)
Power - Max: 225mW or higher (MMBTH24 baseline)
DC Current Gain (hFE): Sufficient for intended application

Substitute parts are grouped into two categories:

Category A - Direct RF Substitutes (Frequency ≥ 400MHz): Parts maintaining RF performance characteristics equivalent to or exceeding the MMBTH24 specification.

Category B - General Purpose Substitutes (Frequency < 400MHz): Parts with reduced frequency performance but compatible electrical and mechanical parameters, suitable for applications not requiring full RF bandwidth.

Parameter Comparison

Part Number	Manufacturer	Transistor Type	Vce Breakdown (Max)	Frequency - Transition	Power - Max	Ic (Max)	hFE (Min)	Package	Product Status
MMBTH24	onsemi	NPN	30V	400MHz	225mW	50mA	30 @ 8mA, 10V	SOT-23-3	Obsolete
MMBTH10LT1G	onsemi	NPN	25V	650MHz	225mW	—	60 @ 4mA, 10V	SOT-23-3	Active
MMBT6429LT1G	onsemi	NPN	45V	700MHz	225mW	200mA	500 @ 100µA, 5V	SOT-23-3	Active
BFP182RE7764HTSA1	Infineon Technologies	NPN	12V	8GHz	250mW	35mA	70 @ 10mA, 8V	SOT-143R	Active
BC848BLT1G	onsemi	NPN	30V	100MHz	300mW	100mA	200 @ 2mA, 5V	SOT-23-3	Active
BC848BLT3G	onsemi	NPN	30V	100MHz	300mW	100mA	200 @ 2mA, 5V	SOT-23-3	Active
BC849BLT1G	onsemi	NPN	30V	100MHz	300mW	100mA	200 @ 2mA, 5V	SOT-23-3	Active
MMBT2222LT1G	onsemi	NPN	30V	250MHz	300mW	600mA	100 @ 150mA, 10V	SOT-23-3	Active
MMBT5088LT1G	onsemi	NPN	30V	50MHz	300mW	50mA	300 @ 100µA, 5V	SOT-23-3	Active
NSVMMBT5088LT3G	onsemi	NPN	30V	50MHz	225mW	50mA	300 @ 100µA, 5V	SOT-23-3	Active
SMMBT5089LT1G	onsemi	NPN	25V	50MHz	300mW	50mA	400 @ 100µA, 5V	SOT-23-3	Active

Engineering Selection Recommendations

Category A - RF Performance Substitutes (Recommended for RF Applications):

MMBTH10LT1G (onsemi) is the primary RF substitute. This active device provides 650MHz transition frequency, exceeding the MMBTH24 baseline of 400MHz. It maintains 225mW power rating and SOT-23-3 packaging. The voltage rating is reduced to 25V, which is acceptable for applications not requiring the full 30V specification. RoHS3 compliance and unlimited moisture sensitivity level ensure modern manufacturing compatibility.

MMBT6429LT1G (onsemi) offers enhanced RF performance at 700MHz transition frequency with 225mW power dissipation. This device provides higher voltage rating (45V) and increased current capability (200mA), making it suitable for applications requiring additional design margin. Active product status and RoHS3 compliance support long-term availability.

BFP182RE7764HTSA1 (Infineon Technologies) is a high-performance RF transistor with 8GHz transition frequency, suitable for applications requiring significantly higher frequency performance than the MMBTH24. However, this device uses SOT-143R packaging (4-pin) rather than SOT-23-3 (3-pin), requiring PCB layout modification. Voltage rating is reduced to 12V. This substitute is appropriate only when RF performance requirements exceed 400MHz and package change is acceptable.

Category B - General Purpose Substitutes (For Non-RF Applications):

BC848BLT1G and BC848BLT3G (onsemi) are electrically equivalent general-purpose transistors with 30V voltage rating and SOT-23-3 packaging. These devices provide 100MHz transition frequency, reduced from the MMBTH24 specification, but offer higher power dissipation (300mW) and current capability (100mA). Packaging variants differ only in tape format (CT vs. TR). Active product status and RoHS3 compliance ensure availability.

BC849BLT1G (onsemi) is functionally identical to BC848 variants with equivalent electrical specifications. Active product status supports production continuity.

MMBT2222LT1G (onsemi) provides 250MHz transition frequency with 600mA current capability and 300mW power dissipation. This device is suitable for applications requiring higher current handling than the MMBTH24 baseline. 30V voltage rating and SOT-23-3 packaging maintain compatibility.

MMBT5088LT1G and NSVMMBT5089LT1G (onsemi) are low-frequency alternatives with 50MHz transition frequency. MMBT5088LT1G provides 300mW power dissipation, while NSVMMBT5088LT3G matches the MMBTH24 power rating at 225mW. Both maintain 30V voltage rating and SOT-23-3 packaging. These substitutes are appropriate only for applications not requiring RF performance above 50MHz.

SMMBT5089LT1G (onsemi) is a 50MHz device with 25V voltage rating, suitable for low-frequency applications with reduced voltage requirements.

Compliance and Availability: All recommended active substitutes carry RoHS3 compliance and REACH unaffected status, ensuring regulatory compatibility with modern manufacturing standards. Inventory levels vary; verify availability for production quantities before design commitment.

Frequently Asked Questions (FAQ)

Q: Can MMBTH24 be directly replaced with BC848BLT1G?

A: BC848BLT1G is mechanically and electrically compatible in SOT-23-3 packaging with matching 30V voltage rating and -55°C to 150°C operating temperature. However, BC848BLT1G operates at 100MHz transition frequency compared to MMBTH24 at 400MHz. This substitution is acceptable only for applications not requiring RF performance above 100MHz. Verify frequency requirements before implementation.

Q: What is the difference between BC848BLT1G and BC848BLT3G?

A: Both devices are electrically identical NPN transistors with 30V rating, 100MHz frequency, and SOT-23-3 packaging. The difference is packaging format: BC848BLT1G is supplied in Cut Tape (CT) & Digi-Reel format, while BC848BLT3G is supplied in Tape & Reel (TR) format. Select based on production equipment compatibility and quantity requirements.

Q: Is MMBTH10LT1G a suitable RF replacement for MMBTH24?

A: MMBTH10LT1G is the recommended RF substitute, providing 650MHz transition frequency versus MMBTH24 at 400MHz. Both maintain 225mW power dissipation and SOT-23-3 packaging. The voltage rating is reduced from 30V to 25V; verify that your application does not require the full 30V specification. MMBTH10LT1G is active and RoHS3 compliant.

Q: Why does BFP182RE7764HTSA1 have a different package than MMBTH24?

A: BFP182RE7764HTSA1 uses SOT-143R (4-pin) packaging versus MMBTH24 SOT-23-3 (3-pin). This reflects the device's enhanced RF performance at 8GHz and additional functionality. Package change requires PCB layout modification and is not a direct drop-in replacement. Use this substitute only when RF performance requirements exceed 400MHz and package redesign is feasible.

Q: Can MMBT5088LT1G replace MMBTH24 in all applications?

A: MMBT5088LT1G is mechanically compatible with SOT-23-3 packaging and 30V voltage rating. However, it operates at 50MHz transition frequency, significantly below MMBTH24 at 400MHz. This substitution is appropriate only for low-frequency applications not requiring RF performance. Verify frequency requirements before selection.

Q: What is the difference between MMBT5088LT1G and NSVMMBT5088LT3G?

A: Both devices are NPN transistors with 30V rating, 50MHz frequency, and SOT-23-3 packaging. MMBT5088LT1G provides 300mW power dissipation, while NSVMMBT5088LT3G provides 225mW, matching the MMBTH24 specification. NSVMMBT5088LT3G is the closer power match if thermal considerations are critical.

Q: Are all substitute parts RoHS3 compliant?

A: All active substitute parts listed carry RoHS3 compliance certification. The original MMBTH24 is obsolete and does not carry RoHS3 status. Verify compliance requirements for your application and production timeline.

Q: What inventory levels are available for substitute parts?

A: Inventory varies by part number. MMBT6429LT1G has the highest availability at 155,200 pieces. MMBTH10LT1G has 62,400 pieces. BC848BLT1G has 17,300 pieces. NSVMMBT5088LT3G has the lowest at 1,083 pieces. Confirm availability for production quantities before design finalization.

Q: Can I use MMBT2222LT1G as a direct replacement for MMBTH24?

A: MMBT2222LT1G is mechanically compatible with SOT-23-3 packaging and 30V voltage rating. It provides 250MHz transition frequency, below MMBTH24 at 400MHz, but offers higher current capability (600mA) and power dissipation (300mW). This substitution is appropriate for applications requiring higher current handling but not requiring full RF performance.

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