MMBTH11 Equivalent & Substitute Parts

Part Overview

The MMBTH11 is an RF transistor NPN surface mount device manufactured by onsemi, rated for 25V collector-emitter breakdown voltage and 650MHz transition frequency. This component is classified as obsolete, necessitating identification of active equivalent and substitute parts for ongoing design requirements and procurement needs. The MMBTH11 operates across a temperature range of -55°C to 150°C and is housed in a SOT-23-3 package with 225mW maximum power dissipation.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	25	V
Frequency - Transition	650	MHz
Power - Max	225	mW
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 4mA, 10V	—
Current - Collector (Ic) (Max)	50	mA
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	TO-236-3, SC-59, SOT-23-3	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the MMBTH11 is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

Transistor type must be NPN
Voltage - Collector Emitter Breakdown (Max) must be ≥25V
Frequency - Transition must be ≥650MHz
Power - Max must be ≥225mW
DC Current Gain (hFE) must be ≥60 @ 4mA, 10V
Current - Collector (Ic) (Max) must be ≥50mA
Operating Temperature range must encompass -55°C to 150°C

Mechanical Compatibility Criteria:

Mounting Type must be Surface Mount
Package / Case must be SOT-23-3 or equivalent (TO-236-3, SC-59)

Substitute parts are grouped into two categories: direct equivalents (matching all electrical and mechanical parameters) and similar parts (meeting minimum electrical requirements with potential frequency or gain enhancements).

Parameter Comparison

Part Number	Manufacturer	Product Status	Vce (Max) [V]	Frequency [MHz]	Power [mW]	hFE (Min)	Ic (Max) [mA]	Temp Range [°C]	Package
MMBTH11	onsemi	Obsolete	25	650	225	60	50	-55 to 150	SOT-23-3
MMBTH10LT1G	onsemi	Active	25	650	225	60	—	-55 to 150	SOT-23-3
MMBTH10-4LT1G	onsemi	Active	25	800	225	120	—	-55 to 150	SOT-23-3
MMBTH10LT3G	onsemi	Active	25	650	225	60	—	-55 to 150	SOT-23-3
NSVMMBTH10LT1G	onsemi	Active	25	650	225	60	—	-55 to 150	SOT-23-3
SMMBTH10-4LT3G	onsemi	Active	25	800	225	120	—	-55 to 150	SOT-23-3
MMBTH10-TP	Micro Commercial Co	Active	25	650	225	60	50	-55 to 150	SOT-23-3
2SC4215-Y(TE85L,F)	Toshiba Semiconductor and Storage	Active	30	550	100	100	20	—	SC-70
2SC4915-Y,LF	Toshiba Semiconductor and Storage	Active	30	550	100	100	20	—	SC-75
BCW31,215	NXP USA Inc.	Active	32	100	250	110	100	—	SOT-23-3
BFP410H6327XTSA1	Infineon Technologies	Active	5	25000	150	60	40	—	SOT-343

Engineering Selection Recommendations

Direct Equivalent Parts (Recommended Primary Substitutes):

MMBTH10LT1G and MMBTH10LT3G are direct electrical and mechanical equivalents to the MMBTH11. Both parts are manufactured by onsemi, maintain identical voltage, frequency, power, and gain specifications, and are housed in the same SOT-23-3 package. Both parts carry Active product status and ROHS3 compliance. MMBTH10LT1G is available in Cut Tape and Digi-Reel packaging with 62,400 units in stock. MMBTH10LT3G is available in Tape & Reel packaging with 1,095 units in stock.

NSVMMBTH10LT1G is an onsemi variant with identical electrical specifications and SOT-23-3 packaging. This part is Active and ROHS3 compliant with 30,200 units in stock.

MMBTH10-TP, manufactured by Micro Commercial Co, provides direct electrical equivalence with specified collector current of 50mA matching the MMBTH11. This part is Active, ROHS3 compliant, and available in Tape & Reel packaging with 4,027 units in stock.

Enhanced Performance Alternatives:

MMBTH10-4LT1G and SMMBTH10-4LT3G offer increased transition frequency (800MHz) and higher DC current gain (120 @ 4mA, 10V) while maintaining 25V voltage rating, 225mW power, and SOT-23-3 packaging. These parts are suitable for applications requiring higher frequency performance. Both are Active and ROHS3 compliant.

Limited Compatibility Parts:

2SC4215-Y(TE85L,F) and 2SC4915-Y,LF are Toshiba RF transistors with higher voltage ratings (30V) but lower frequency (550MHz), lower power (100mW), and reduced collector current (20mA). These parts do not meet the minimum frequency and power requirements of the MMBTH11 and are housed in different packages (SC-70 and SC-75 respectively).

BCW31,215 is an NXP small signal bipolar transistor with higher voltage (32V) and power (250mW) ratings but significantly lower frequency (100MHz). This part does not meet RF frequency requirements and is not suitable for MMBTH11 replacement.

BFP410H6327XTSA1 is an Infineon RF transistor with extremely high frequency capability (25GHz) but operates at only 5V, making it unsuitable for 25V applications.

Frequently Asked Questions (FAQ)

Q: Can MMBTH10LT1G directly replace MMBTH11 in existing designs?

A: Yes. MMBTH10LT1G is electrically and mechanically equivalent to MMBTH11. Both parts share identical voltage (25V), frequency (650MHz), power (225mW), gain (60 @ 4mA, 10V), and package specifications (SOT-23-3). MMBTH10LT1G is Active status, addressing the obsolescence of MMBTH11.

Q: What is the difference between MMBTH10LT1G and MMBTH10-4LT1G?

A: MMBTH10-4LT1G operates at 800MHz transition frequency compared to 650MHz for MMBTH10LT1G. MMBTH10-4LT1G also provides higher DC current gain (120 @ 4mA, 10V) versus 60 for MMBTH10LT1G. Both maintain 25V voltage and 225mW power ratings. Selection depends on whether the application requires the higher frequency capability.

Q: Are onsemi MMBTH10 variants interchangeable?

A: MMBTH10LT1G, MMBTH10LT3G, and NSVMMBTH10LT1G are electrically interchangeable for 650MHz applications. Differences exist in packaging format (Cut Tape/Digi-Reel versus Tape & Reel) and inventory availability. The NSV prefix variant (NSVMMBTH10LT1G) indicates a specific onsemi product line variant with identical electrical specifications.

Q: Can MMBTH10-TP from Micro Commercial Co replace MMBTH11?

A: Yes. MMBTH10-TP provides direct electrical equivalence with specified 50mA collector current matching MMBTH11. Both parts operate at 25V, 650MHz, 225mW, and are housed in SOT-23-3 packages. MMBTH10-TP is Active status and ROHS3 compliant.

Q: Why are Toshiba 2SC4215 and 2SC4915 listed as similar but not recommended?

A: These Toshiba parts do not meet MMBTH11 minimum specifications. Both operate at only 550MHz (below 650MHz requirement), deliver 100mW maximum power (below 225mW requirement), and limit collector current to 20mA (below 50mA requirement). Additionally, they are housed in different packages (SC-70 and SC-75 versus SOT-23-3).

Q: What packaging options are available for MMBTH11 substitutes?

A: onsemi MMBTH10 variants are available in Cut Tape (CT) & Digi-Reel packaging (MMBTH10LT1G) and Tape & Reel (TR) packaging (MMBTH10LT3G, NSVMMBTH10LT1G, MMBTH10-4LT1G, SMMBTH10-4LT3G). Micro Commercial Co MMBTH10-TP is available in Tape & Reel format. All maintain SOT-23-3 package specification.

Q: Are all substitute parts RoHS compliant?

A: All recommended onsemi and Micro Commercial Co substitutes are ROHS3 compliant. Toshiba parts are RoHS compliant. Infineon BFP410H6327XTSA1 is ROHS3 compliant. Compliance status is provided for each part in the parameter comparison table.

Q: What is the moisture sensitivity level for substitute parts?

A: All onsemi MMBTH10 variants and MMBTH10-TP carry MSL 1 (Unlimited) rating, matching MMBTH11. This indicates no moisture sensitivity restrictions for storage and handling.

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