MMBTH10RG RF Transistor NPN Equivalent & Substitute Parts

Part Overview

The MMBTH10RG is an RF transistor NPN manufactured by onsemi, designed for RF applications operating at 450MHz with a maximum collector-emitter breakdown voltage of 40V and power dissipation of 225mW. The device is packaged in SOT-23-3 surface mount configuration and is currently classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active product lines are necessary for new designs and ongoing production requirements. Substitute parts maintain functional compatibility through equivalent electrical characteristics and identical or compatible packaging standards.

Key Parameters

Parameter	MMBTH10RG	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	40V	V
Frequency - Transition	450MHz	MHz
Power - Max	225mW	mW
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 1mA, 6V	—
Current - Collector (Ic) (Max)	50mA	mA
Operating Temperature	-55°C ~ 150°C (TJ)	°C
Mounting Type	Surface Mount	—
Package / Case	TO-236-3, SC-59, SOT-23-3	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the MMBTH10RG is determined by the following critical parameters: transistor type (NPN), package compatibility (SOT-23-3 surface mount), operating temperature range (-55°C to 150°C), and compliance certifications (ROHS3, REACH Unaffected). Substitute parts are grouped into two categories based on electrical performance alignment:

Category 1: Direct Functional Equivalents (onsemi MMBTH10 Series) These parts share the same base product number (MMBTH10) and maintain SOT-23-3 packaging. They operate within the same temperature range and meet identical compliance requirements. Electrical parameters including voltage rating, frequency response, and current gain specifications determine suitability for specific circuit applications.

Category 2: Cross-Manufacturer Alternatives These parts from Infineon Technologies, Diodes Incorporated, Micro Commercial Co, and Toshiba Semiconductor provide functional RF transistor capability in SOT-23-3 or compatible packages. Selection depends on matching the application's voltage, frequency, and current requirements within the specified operating temperature range.

Parameter Comparison

Part Number	Manufacturer	Vce (Max) [V]	Frequency [MHz]	Power [mW]	Ic (Max) [mA]	hFE (Min)	Package	Status
MMBTH10RG	onsemi	40	450	225	50	50 @ 1mA, 6V	SOT-23-3	Obsolete
MMBTH10-4LT1G	onsemi	25	800	225	—	120 @ 4mA, 10V	SOT-23-3	Active
MMBTH10LT1G	onsemi	25	650	225	—	60 @ 4mA, 10V	SOT-23-3	Active
MMBTH10LT3G	onsemi	25	650	225	—	60 @ 4mA, 10V	SOT-23-3	Active
MMBTH10-7-F	Diodes Incorporated	25	650	300	50	60 @ 4mA, 10V	SOT-23-3	Active
MMBTH10-TP	Micro Commercial Co	25	650	225	50	60 @ 4mA, 10V	SOT-23-3	Active
BFR183E6327HTSA1	Infineon Technologies	12	8000	450	65	70 @ 15mA, 8V	SOT-23-3	Active
BFP740ESDH6327XTSA1	Infineon Technologies	4.7	45000	160	45	160 @ 25mA, 3V	SOT-343	Active
BFP520FH6327XTSA1	Infineon Technologies	3.5	45000	100	40	70 @ 20mA, 2V	4-TSFP	Active
MT3S16U(TE85L,F)	Toshiba Semiconductor and Storage	5	4000	100	60	80 @ 5mA, 1V	SC-70	Active

Engineering Selection Recommendations

For Direct Replacement in Existing Designs: The onsemi MMBTH10 series variants (MMBTH10-4LT1G, MMBTH10LT1G, MMBTH10LT3G) are recommended as primary substitutes. These parts maintain identical SOT-23-3 packaging, equivalent power dissipation (225mW), and full compliance with ROHS3 and REACH requirements. All variants operate across the -55°C to 150°C temperature range. Selection among these variants depends on application frequency requirements: MMBTH10-4LT1G for 800MHz applications, MMBTH10LT1G and MMBTH10LT3G for 650MHz applications. The primary difference between MMBTH10LT1G and MMBTH10LT3G is packaging format (Cut Tape vs. Tape & Reel).

For Applications Requiring Higher Voltage Tolerance: The MMBTH10-7-F from Diodes Incorporated and MMBTH10-TP from Micro Commercial Co both support 25V maximum collector-emitter breakdown voltage with 650MHz frequency response. MMBTH10-7-F offers increased power dissipation (300mW) compared to the original specification. Both maintain SOT-23-3 packaging and full compliance certifications.

For High-Frequency Applications: The Infineon BFR183E6327HTSA1 operates at 8GHz with 12V maximum voltage rating and 450mW power dissipation in SOT-23-3 packaging. This part is suitable for applications requiring significantly higher frequency performance than the original 450MHz specification.

For Ultra-High-Frequency Applications: The Infineon BFP740ESDH6327XTSA1 and BFP520FH6327XTSA1 provide 45GHz frequency capability but require evaluation of package compatibility (SOT-343 and 4-TSFP respectively) and lower voltage ratings (4.7V and 3.5V maximum).

For Compact Packaging: The Toshiba MT3S16U(TE85L,F) provides RF transistor functionality in SC-70 package with 4GHz frequency response and 5V maximum voltage rating.

All substitute parts listed maintain ROHS3 compliance and MSL Level 1 (Unlimited) moisture sensitivity rating, ensuring compatibility with standard manufacturing and storage practices.

Frequently Asked Questions (FAQ)

Q: Can MMBTH10-4LT1G directly replace MMBTH10RG in all applications? A: MMBTH10-4LT1G shares identical SOT-23-3 packaging and power dissipation (225mW) with MMBTH10RG. However, the voltage rating is reduced from 40V to 25V, and the frequency response increases from 450MHz to 800MHz. Direct replacement is possible only in applications where the circuit operates below 25V collector-emitter voltage and where the higher frequency response does not introduce instability.

Q: What is the difference between MMBTH10LT1G and MMBTH10LT3G? A: Both parts are electrically identical with 25V maximum voltage, 650MHz frequency response, and 225mW power dissipation. The difference is packaging format: MMBTH10LT1G is supplied in Cut Tape (CT) & Digi-Reel format, while MMBTH10LT3G is supplied in Tape & Reel (TR) format. Selection depends on procurement and assembly requirements.

Q: Are the Infineon BFP740ESDH6327XTSA1 and BFP520FH6327XTSA1 compatible with SOT-23-3 footprints? A: No. BFP740ESDH6327XTSA1 uses SOT-343 packaging (SC-82A), and BFP520FH6327XTSA1 uses 4-TSFP packaging. These parts require different PCB footprints and are not pin-compatible with SOT-23-3 designs. They are suitable only for new designs where the package change can be accommodated.

Q: Does the Toshiba MT3S16U(TE85L,F) fit SOT-23-3 footprints? A: No. The MT3S16U(TE85L,F) uses SC-70 (SOT-323) packaging, which is not compatible with SOT-23-3 footprints. This part requires PCB redesign and is suitable for new designs only.

Q: What compliance certifications do all substitute parts maintain? A: All listed substitute parts are ROHS3 compliant and REACH unaffected. All maintain Moisture Sensitivity Level 1 (Unlimited), indicating no special moisture handling requirements during storage or assembly.

Q: Which substitute part offers the closest electrical match to MMBTH10RG? A: MMBTH10-7-F from Diodes Incorporated provides the closest match with 25V maximum voltage, 650MHz frequency response, 50mA maximum collector current, and identical SOT-23-3 packaging. The primary difference is increased power dissipation (300mW vs. 225mW), which provides additional thermal margin in the application.

Q: Can MMBTH10RG be used in applications designed for MMBTH10-4LT1G? A: MMBTH10RG can be used in MMBTH10-4LT1G applications only if the circuit operates below 25V collector-emitter voltage and if the lower frequency response (450MHz vs. 800MHz) is acceptable. The higher voltage rating (40V) of MMBTH10RG provides additional margin but does not prevent substitution in lower-voltage circuits.

Q: What is the operating temperature range for all substitute parts? A: All onsemi MMBTH10 series variants, Diodes Incorporated MMBTH10-7-F, and Micro Commercial Co MMBTH10-TP operate across -55°C to 150°C (TJ). The Infineon BFR183E6327HTSA1 also operates to 150°C (TJ). The Toshiba MT3S16U(TE85L,F) operates to 125°C (TJ), which is a reduced maximum temperature. The Infineon BFP740ESDH6327XTSA1 and BFP520FH6327XTSA1 operate to 150°C (TJ).

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