MMBTH10LT3G Equivalent & Substitute Parts

Part Overview

The MMBTH10LT3G is an RF transistor NPN manufactured by onsemi, rated for 25V collector-emitter breakdown voltage with a transition frequency of 650MHz and maximum power dissipation of 225mW. The device is housed in a surface mount SOT-23-3 (TO-236) package and is classified as Active product status. Substitute parts are identified when equivalent electrical specifications and mechanical compatibility allow direct replacement in circuit applications, particularly when addressing inventory availability, packaging format preferences, or manufacturer sourcing requirements.

Substiute Parts

MMBTH10LT3G

onsemiIn Stock: 1163MMBTH10LT3G Datasheet

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KST10MTF

onsemiIn Stock: 391133KST10MTF Datasheet

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MMBTH10-7-F

Diodes IncorporatedIn Stock: 10612MMBTH10-7-F Datasheet

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BFP420H6327XTSA1

Infineon TechnologiesIn Stock: 6250BFP420H6327XTSA1 Datasheet

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MMBTH10-TP

Micro Commercial CoIn Stock: 4106MMBTH10-TP Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the MMBTH10LT3G are classified based on strict electrical and mechanical parameter alignment. The primary substitution criteria are:

Critical Parameters for Substitution:

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 25V
• Frequency - Transition: 650MHz
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Mounting Type: Surface Mount
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V

Allowable Variations:

• Power - Max: Substitute parts with equal or greater power rating are acceptable
• Packaging Format: Tape & Reel (TR) and Cut Tape (CT) & Digi-Reel® formats are interchangeable for the same package type
• Current - Collector (Ic) (Max): Substitute parts with equal or greater maximum collector current are acceptable
• Operating Temperature: Substitute parts with equal or wider temperature range are acceptable

Non-Substitutable Characteristics: Parts with different voltage ratings, transition frequencies, or package types are excluded from direct substitution.

Parameter Comparison

Engineering Selection Recommendations

Direct Substitutes (Fully Compatible):

KST10MTF (onsemi) and MMBTH10-7-F (Diodes Incorporated) and MMBTH10-TP (Micro Commercial Co) are direct substitutes for MMBTH10LT3G. These parts maintain identical voltage ratings (25V), transition frequency (650MHz), DC current gain specifications (60 @ 4mA, 10V), and package configuration (SOT-23-3). All three substitute parts are ROHS3 compliant with MSL rating of 1 (Unlimited), matching the compliance profile of the primary part. KST10MTF offers increased power dissipation capability (350mW versus 225mW). MMBTH10-7-F and MMBTH10-TP provide specified maximum collector current ratings (50mA) and maintain the full operating temperature range (-55 to 150°C).

Non-Compatible Substitute:

BFP420H6327XTSA1 (Infineon Technologies) is not a direct substitute. Although it is an NPN RF transistor in surface mount packaging, it operates at a maximum voltage rating of 5V (versus 25V required) and features a transition frequency of 25GHz (versus 650MHz required). The package type differs (SOT-343 versus SOT-23-3), and the maximum power dissipation is lower (160mW). This part is suitable only for applications with different electrical specifications and cannot replace MMBTH10LT3G in existing circuit designs.

Frequently Asked Questions (FAQ)

Q: Can KST10MTF replace MMBTH10LT3G in all applications?

A: KST10MTF is a direct substitute with identical electrical specifications for voltage rating, transition frequency, and DC current gain. The higher power dissipation rating (350mW versus 225mW) provides additional thermal margin. Both parts use the same SOT-23-3 package and are ROHS3 compliant with MSL 1 rating. Substitution is valid for direct circuit replacement.

Q: What is the difference between MMBTH10-7-F and MMBTH10-TP?

A: Both parts are direct substitutes for MMBTH10LT3G with identical voltage (25V), frequency (650MHz), and gain specifications. MMBTH10-7-F is manufactured by Diodes Incorporated with 300mW power rating and 50mA maximum collector current. MMBTH10-TP is manufactured by Micro Commercial Co with 225mW power rating and 50mA maximum collector current. Both maintain the full operating temperature range (-55 to 150°C) and SOT-23-3 package configuration.

Q: Why is BFP420H6327XTSA1 listed as a substitute if it cannot replace MMBTH10LT3G?

A: BFP420H6327XTSA1 is included in the substitute list based on the provided input data but does not meet the critical substitution criteria. The 5V voltage rating and 25GHz frequency are fundamentally different from the 25V and 650MHz specifications required. The SOT-343 package is also incompatible with SOT-23-3 footprints. This part is not suitable for direct replacement.

Q: Are packaging format differences (Tape & Reel versus Cut Tape) significant for substitution?

A: Packaging format differences (Tape & Reel versus Cut Tape & Digi-Reel) do not affect electrical or mechanical compatibility. Both formats contain identical components in the same package type. Format selection is determined by manufacturing process requirements, inventory management, and supply chain logistics rather than circuit performance.

Q: What compliance certifications apply to all substitute parts?

A: All substitute parts listed (KST10MTF, MMBTH10-7-F, MMBTH10-TP) are ROHS3 compliant and REACH unaffected. All parts carry MSL rating of 1 (Unlimited), indicating no moisture sensitivity restrictions. These certifications match the compliance profile of MMBTH10LT3G, ensuring regulatory and environmental compatibility.

Q: Can MMBTH10-TP be used in applications requiring the full -55 to 150°C operating temperature range?

A: MMBTH10-TP maintains the full operating temperature range of -55 to 150°C (TJ), matching MMBTH10LT3G specifications. This part is suitable for applications requiring extended temperature operation.