MMBTH10-7 RF Transistor NPN Equivalent & Substitute Parts

Part Overview

The MMBTH10-7 is an RF transistor NPN manufactured by Diodes Incorporated in SOT-23-3 surface mount packaging. This device operates at 25V collector-emitter breakdown voltage with a transition frequency of 650MHz and maximum power dissipation of 300mW. The part is classified as Active product status with ROHS3 compliance and unlimited moisture sensitivity level (MSL 1). Equivalent and substitute parts are identified to support design flexibility, inventory management, and supply chain continuity for RF applications requiring NPN transistor functionality within specified electrical and mechanical parameters.

Key Parameters

Parameter	MMBTH10-7
Manufacturer	Diodes Incorporated
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	25V
Frequency - Transition	650MHz
Power - Max	300mW
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 4mA, 10V
Current - Collector (Ic) (Max)	50mA
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Product Status	Active

Substitute Part Grouping Explanation

Substitute parts for the MMBTH10-7 are classified into two categories based on electrical parameter alignment:

Direct Substitutes maintain identical or equivalent electrical specifications across all critical parameters: 25V collector-emitter breakdown voltage, 650MHz transition frequency, NPN transistor type, SOT-23-3 surface mount package, 60 @ 4mA, 10V DC current gain minimum, and ROHS3 compliance. These parts support pin-for-pin and functional replacement without circuit modification.

Similar Substitutes share the NPN transistor type, surface mount technology, and ROHS3 compliance but differ in one or more electrical parameters including voltage rating, transition frequency, power dissipation, current gain, or package variant. Selection of similar substitutes requires circuit-level evaluation to confirm compatibility with application requirements.

The following parameters determine substitution eligibility:

Transistor Type (NPN)
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature Range
Package / Case
RoHS Status

Parameter Comparison

Part Number	Manufacturer	Voltage (Max)	Frequency	Power (Max)	hFE (Min)	Ic (Max)	Package	Substitution Type
MMBTH10-7	Diodes Incorporated	25V	650MHz	300mW	60 @ 4mA, 10V	50mA	SOT-23-3	Main Part
MMBTH10-7-F	Diodes Incorporated	25V	650MHz	300mW	60 @ 4mA, 10V	50mA	SOT-23-3	Direct
NSVMMBTH10LT1G	onsemi	25V	650MHz	225mW	60 @ 4mA, 10V	—	SOT-23-3	Direct
MMBTH10LT1G	onsemi	25V	650MHz	225mW	60 @ 4mA, 10V	—	SOT-23-3	Direct
MMBTH10-4LT1G	onsemi	25V	800MHz	225mW	120 @ 4mA, 10V	—	SOT-23-3	Similar
MMBTH10-TP	Micro Commercial Co	25V	650MHz	225mW	60 @ 4mA, 10V	SOT-23-3	50mA	Direct
KST10MTF	onsemi	25V	650MHz	350mW	60 @ 4mA, 10V	—	SOT-23-3	Direct
KSP10TA	Fairchild Semiconductor	25V	650MHz	350mW	60 @ 4mA, 10V	TO-92-3	—	Similar
2SC5065-Y(TE85L,F)	Toshiba Semiconductor and Storage	12V	7GHz	100mW	120 @ 10mA, 5V	30mA	SC-70	Similar
2SC5488A-TL-H	onsemi	10V	7GHz	100mW	90 @ 20mA, 5V	70mA	3-SSFP	Similar
BFR181WH6327XTSA1	Infineon Technologies	12V	8GHz	175mW	70 @ 5mA, 8V	20mA	SOT-323	Similar

Engineering Selection Recommendations

Direct Substitutes (MMBTH10-7-F, NSVMMBTH10LT1G, MMBTH10LT1G, MMBTH10-TP, KST10MTF) are suitable for direct replacement in applications where the MMBTH10-7 is specified. All direct substitutes maintain 25V collector-emitter breakdown voltage, 650MHz transition frequency, NPN transistor configuration, SOT-23-3 surface mount package, and ROHS3 compliance. Packaging format differences (Cut Tape vs. Tape & Reel) do not affect electrical performance. Power dissipation variations (225mW to 350mW) remain within acceptable margins for RF applications operating within the specified voltage and frequency parameters.

Similar Substitutes (MMBTH10-4LT1G, KSP10TA, 2SC5065-Y(TE85L,F), 2SC5488A-TL-H, BFR181WH6327XTSA1) present electrical parameter deviations that require application-specific evaluation. MMBTH10-4LT1G operates at 800MHz transition frequency with elevated DC current gain (120 @ 4mA, 10V) while maintaining 25V voltage rating and SOT-23-3 package. KSP10TA provides identical electrical specifications but uses through-hole TO-92-3 packaging, requiring PCB layout modification. Parts 2SC5065-Y(TE85L,F), 2SC5488A-TL-H, and BFR181WH6327XTSA1 operate at reduced voltage ratings (10V to 12V) and elevated transition frequencies (7GHz to 8GHz) with different package formats, suitable only for applications where these parameter variations are compatible with circuit design requirements.

All substitute parts maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity level, supporting equivalent environmental and regulatory requirements.

Frequently Asked Questions (FAQ)

Q: Can MMBTH10-7-F replace MMBTH10-7 in production designs?

A: Yes. MMBTH10-7-F is a direct substitute manufactured by Diodes Incorporated with identical electrical specifications (25V, 650MHz, 60 @ 4mA, 10V hFE) and SOT-23-3 package. The primary difference is packaging format (Tape & Reel vs. Cut Tape), which does not affect circuit performance.

Q: What is the difference between MMBTH10LT1G and MMBTH10-7?

A: MMBTH10LT1G is manufactured by onsemi and maintains equivalent electrical specifications for voltage (25V), frequency (650MHz), and DC current gain (60 @ 4mA, 10V). Power dissipation is reduced to 225mW compared to 300mW for MMBTH10-7. Both use SOT-23-3 surface mount packaging and are ROHS3 compliant. Selection depends on application power budget requirements.

Q: Is MMBTH10-4LT1G a suitable replacement for MMBTH10-7?

A: MMBTH10-4LT1G shares the 25V voltage rating and SOT-23-3 package but operates at 800MHz transition frequency with DC current gain of 120 @ 4mA, 10V. This part is classified as a similar substitute. Compatibility requires verification that the application circuit operates correctly at the elevated frequency and current gain specifications.

Q: Can KSP10TA be used instead of MMBTH10-7?

A: KSP10TA provides identical electrical specifications (25V, 650MHz, 60 @ 4mA, 10V hFE, 350mW) but uses through-hole TO-92-3 packaging instead of surface mount SOT-23-3. This substitution requires PCB redesign to accommodate the different package footprint and lead configuration. Electrical performance is equivalent.

Q: Why are 2SC5065-Y(TE85L,F) and 2SC5488A-TL-H listed as substitutes?

A: These parts are classified as similar substitutes due to significant electrical parameter differences. 2SC5065-Y(TE85L,F) operates at 12V with 7GHz transition frequency and uses SC-70 packaging. 2SC5488A-TL-H operates at 10V with 7GHz transition frequency and 3-SSFP packaging. These parts are suitable only for applications where reduced voltage ratings and elevated frequency operation are compatible with circuit requirements.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All direct and similar substitute parts listed maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity level, supporting equivalent environmental and regulatory requirements to the MMBTH10-7.

Q: What packaging options are available for MMBTH10-7 equivalents?

A: Direct substitutes are available in Cut Tape (CT) & Digi-Reel® and Tape & Reel (TR) formats, both maintaining SOT-23-3 surface mount package. KSP10TA provides through-hole TO-92-3 packaging. Similar substitutes include SC-70, 3-SSFP, and SOT-323 package variants. Package selection depends on PCB assembly process and design requirements.

Q: Can MMBTH10-TP be used as a direct replacement?

A: Yes. MMBTH10-TP manufactured by Micro Commercial Co is a direct substitute with identical electrical specifications (25V, 650MHz, 60 @ 4mA, 10V hFE, 50mA Ic max) and SOT-23-3 surface mount package. Packaging format is Tape & Reel (TR). This part supports pin-for-pin and functional replacement.

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