MMBTH10 RF Transistor NPN Equivalent & Substitute Parts

Part Overview

The MMBTH10 is an RF transistor NPN manufactured by onsemi, designed for RF applications operating at 650MHz with a maximum collector-emitter breakdown voltage of 25V and power dissipation of 225mW in a surface mount SOT-23-3 package. The MMBTH10 is classified as obsolete, necessitating identification of active equivalent and substitute parts for new designs and production requirements. Active alternatives maintain the same electrical and mechanical specifications or provide enhanced performance characteristics within compatible package configurations.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	25	V
Frequency - Transition	650	MHz
Power - Max	225	mW
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 4mA, 10V	—
Current - Collector (Ic) (Max)	50	mA
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	TO-236-3, SC-59, SOT-23-3	—

Substitute Part Grouping Explanation

Substitution of the MMBTH10 is determined by the following critical parameters: transistor type (NPN), maximum collector-emitter breakdown voltage (25V), transition frequency (650MHz), maximum power dissipation (225mW), and surface mount package compatibility (SOT-23-3 / TO-236-3). Parts are grouped into three categories based on electrical and mechanical alignment:

Direct Equivalents (Same Electrical Specifications): Parts maintaining identical voltage, frequency, power, and gain specifications with active product status and compatible packaging.

Similar Variants (Enhanced Frequency Performance): Parts with identical voltage and power ratings but higher transition frequency (800MHz), providing performance headroom for the same application envelope.

Cross-Manufacturer Alternatives (Different Package/Voltage Classes): Parts from alternative manufacturers with different package types or voltage ratings, suitable only when mechanical and electrical constraints permit deviation from the original specification.

Parameter Comparison

Part Number	Manufacturer	Product Status	Vce (Max) [V]	Frequency [MHz]	Power [mW]	hFE (Min) @ Ic, Vce	Package	Packaging Type
MMBTH10	onsemi	Obsolete	25	650	225	60 @ 4mA, 10V	SOT-23-3	—
MMBTH10LT1G	onsemi	Active	25	650	225	60 @ 4mA, 10V	SOT-23-3	Cut Tape (CT) & Digi-Reel®
MMBTH10-4LT1G	onsemi	Active	25	800	225	120 @ 4mA, 10V	SOT-23-3	Tape & Reel (TR)
MMBTH10LT3G	onsemi	Active	25	650	225	60 @ 4mA, 10V	SOT-23-3	Tape & Reel (TR)
SMMBTH10-4LT3G	onsemi	Active	25	800	225	120 @ 4mA, 10V	SOT-23-3	Tape & Reel (TR)
BCW31,215	NXP USA Inc.	Active	32	100	250	110 @ 2mA, 5V	SOT-23-3	Bulk
BFR460L3E6327XTMA1	Infineon Technologies	Active	5.8	22000	200	90 @ 20mA, 3V	PG-TSLP-3-1	Tape & Reel (TR)
BFR193L3E6327XTMA1	Infineon Technologies	Active	12	8000	580	70 @ 30mA, 8V	PG-TSLP-3-1	Tape & Reel (TR)
BF888H6327XTSA1	Infineon Technologies	Active	4	47000	160	250 @ 25A, 3V	PG-SOT343-4-2	Tape & Reel (TR)
BFP640ESDH6327XTSA1	Infineon Technologies	Active	4.7	46000	200	110 @ 30mA, 3V	PG-SOT343-4-2	Cut Tape (CT) & Digi-Reel®
BFP740FESDH6327XTSA1	Infineon Technologies	Active	4.7	47000	160	160 @ 25mA, 3V	4-TSFP	Tape & Reel (TR)

Engineering Selection Recommendations

Primary Substitutes (Direct Replacement):

MMBTH10LT1G and MMBTH10LT3G are direct electrical equivalents to the obsolete MMBTH10, maintaining identical voltage (25V), frequency (650MHz), power (225mW), and gain specifications. Both parts are active with RoHS3 compliance and unlimited moisture sensitivity rating. MMBTH10LT1G is available in Cut Tape & Digi-Reel® packaging, while MMBTH10LT3G is supplied in Tape & Reel format. Selection between these variants depends on procurement and assembly requirements.

Enhanced Performance Variants (Same Voltage Class):

MMBTH10-4LT1G and SMMBTH10-4LT3G provide higher transition frequency (800MHz) and increased DC current gain (120 @ 4mA, 10V) while maintaining the 25V voltage rating and 225mW power dissipation. These variants are suitable for applications requiring improved RF performance within the same voltage envelope. Both are active with RoHS3 compliance.

Cross-Manufacturer Alternatives:

BCW31,215 from NXP USA Inc. is a small-signal bipolar transistor in SOT-23-3 package with higher voltage rating (32V) and power capability (250mW), but operates at lower frequency (100MHz). This part is suitable only for applications where the lower frequency specification is acceptable and the higher voltage rating provides design margin. The part carries AEC-Q101 automotive qualification.

High-Frequency Alternatives (Different Package):

Infineon Technologies parts (BFR460L3E6327XTMA1, BFR193L3E6327XTMA1, BF888H6327XTSA1, BFP640ESDH6327XTSA1, BFP740FESDH6327XTSA1) operate at significantly higher frequencies (8GHz to 47GHz) with different package configurations (PG-TSLP-3-1, PG-SOT343-4-2, 4-TSFP). These parts are applicable only when circuit design accommodates alternative packaging and when higher frequency performance is required. Voltage ratings vary from 4V to 12V, requiring circuit redesign for compatibility.

Frequently Asked Questions (FAQ)

Q: Can MMBTH10LT1G be used as a direct replacement for MMBTH10?

A: Yes. MMBTH10LT1G is electrically and mechanically identical to MMBTH10, with identical voltage (25V), frequency (650MHz), power (225mW), and gain specifications. The primary difference is product status: MMBTH10LT1G is active while MMBTH10 is obsolete. Packaging format differs (Cut Tape & Digi-Reel® versus original specification), but the component itself is compatible.

Q: What is the difference between MMBTH10LT1G and MMBTH10-4LT1G?

A: Both parts maintain the 25V voltage rating and 225mW power dissipation. MMBTH10-4LT1G operates at 800MHz transition frequency with 120 hFE gain, compared to MMBTH10LT1G at 650MHz with 60 hFE gain. MMBTH10-4LT1G provides enhanced RF performance and is suitable for applications requiring higher frequency capability within the same voltage class.

Q: Is BCW31,215 a suitable substitute for MMBTH10?

A: BCW31,215 is not a direct substitute. While both are NPN transistors in SOT-23-3 packages, BCW31,215 operates at 100MHz (versus 650MHz for MMBTH10) and has a lower voltage rating (32V versus 25V). BCW31,215 is suitable only for low-frequency applications where the 100MHz specification is acceptable. The higher voltage rating does not compensate for the frequency limitation.

Q: Can Infineon high-frequency parts replace MMBTH10?

A: Infineon parts (BFR460, BFR193, BF888, BFP640, BFP740 series) operate at frequencies from 8GHz to 47GHz and use different package types (PG-TSLP-3-1, PG-SOT343-4-2, 4-TSFP). These parts are not pin-compatible with MMBTH10 and require circuit redesign. They are applicable only when higher frequency performance is required and mechanical constraints permit alternative packaging.

Q: What packaging options are available for MMBTH10 equivalents?

A: MMBTH10LT1G is supplied in Cut Tape & Digi-Reel® format. MMBTH10LT3G, MMBTH10-4LT1G, and SMMBTH10-4LT3G are supplied in Tape & Reel format. All maintain the SOT-23-3 package type. Selection depends on assembly line requirements and procurement specifications.

Q: Are all substitute parts RoHS3 compliant?

A: All onsemi variants (MMBTH10LT1G, MMBTH10-4LT1G, MMBTH10LT3G, SMMBTH10-4LT3G) are RoHS3 compliant. Infineon parts (BFR460L3E6327XTMA1, BFR193L3E6327XTMA1, BF888H6327XTSA1, BFP640ESDH6327XTSA1, BFP740FESDH6327XTSA1) are RoHS3 compliant. BCW31,215 compliance status is not specified in the provided data.

Q: What is the moisture sensitivity level for substitute parts?

A: All onsemi RF transistor variants (MMBTH10LT1G, MMBTH10-4LT1G, MMBTH10LT3G, SMMBTH10-4LT3G) have MSL 1 (Unlimited). All Infineon parts listed have MSL 1 (Unlimited). MSL 1 indicates unlimited shelf life without moisture control requirements.

Q: Which substitute provides the best inventory availability?

A: MMBTH10LT1G has 62,400 pieces in stock. MMBTH10-4LT1G has 18,400 pieces. MMBTH10LT3G has 1,095 pieces. SMMBTH10-4LT3G has 994 pieces. For immediate availability of direct electrical equivalents, MMBTH10LT1G is the preferred choice.

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