MMBTA92_D87Z Equivalent & Substitute Parts

Part Overview

The MMBTA92_D87Z is a PNP bipolar junction transistor manufactured by onsemi, designed for surface mount applications in the SOT-23-3 package. This component operates at 300 V collector-emitter breakdown voltage with a maximum collector current of 500 mA and 350 mW power dissipation. The part is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and ongoing production requirements. Equivalent parts maintain identical electrical and mechanical specifications, while substitute parts provide functional alternatives with modified parameters suitable for specific application requirements.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Collector-Emitter Breakdown Voltage (Max)	300	V
Collector Current (Max)	500	mA
Power Dissipation (Max)	350	mW
Transition Frequency	50	MHz
Vce Saturation (Max)	500	mV @ 2mA, 20mA
DC Current Gain (hFE Min)	25	@ 30mA, 10V
Operating Temperature Range	-55 to 150	°C
Package Type	SOT-23-3 (TO-236)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the MMBTA92_D87Z is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Transistor type must be PNP
Collector-emitter breakdown voltage must be ≥ 300 V
Maximum collector current must be ≥ 500 mA
Package must be SOT-23-3 (TO-236) or equivalent surface mount configuration
Operating temperature range must encompass -55°C to 150°C
Mounting type must be surface mount

Direct Equivalents maintain all electrical specifications identical to the MMBTA92_D87Z, differing only in product status (active vs. obsolete) or packaging format (Cut Tape vs. Tape & Reel).

Functional Substitutes provide alternative electrical characteristics while maintaining the core PNP topology and SOT-23-3 package. These parts are suitable for applications where the modified parameters remain within design tolerances. Substitutes may feature higher breakdown voltages, increased transition frequencies, or modified power ratings.

Parameter Comparison

Part Number	Manufacturer	Product Status	Vce Breakdown (V)	Ic Max (mA)	Power Max (mW)	fT (MHz)	hFE Min	Package	Compliance
MMBTA92_D87Z	onsemi	Obsolete	300	500	350	50	25	SOT-23-3	REACH Unaffected
MMBTA92LT1G	onsemi	Active	300	500	300	50	25	SOT-23-3	RoHS3 Compliant
SMMBTA92LT1G	onsemi	Active	300	500	300	50	25	SOT-23-3	RoHS3, AEC-Q101
MMBTA92LT3G	onsemi	Active	300	500	300	50	25	SOT-23-3	RoHS3 Compliant
SMMBTA92LT3G	onsemi	Active	300	500	300	50	25	SOT-23-3	RoHS3, AEC-Q101
MMBTA92-7-F	Diodes Incorporated	Active	300	500	300	50	25	SOT-23-3	RoHS3, AEC-Q101
MMBT6520LT1G	onsemi	Active	350	500	225	200	20	SOT-23-3	RoHS3 Compliant
NSVMMBT6520LT1G	onsemi	Active	350	500	225	200	20	SOT-23-3	RoHS3, AEC-Q101
CMPTA92E TR PBFREE	Central Semiconductor Corp	Active	350	500	350	75	105	SOT-23	RoHS3 Compliant
MSB92T1G	onsemi	Active	300	150	150	50	25	SC-59	RoHS3 Compliant
FMMT597TA	Diodes Incorporated	Active	300	200	500	75	100	SOT-23-3	RoHS3, AEC-Q101

Engineering Selection Recommendations

Direct Replacement (Identical Electrical Specifications):

The following parts provide direct functional equivalence to the MMBTA92_D87Z with active product status:

MMBTA92LT1G (onsemi): Active equivalent with RoHS3 compliance. Identical electrical parameters with reduced power rating (300 mW vs. 350 mW). Suitable for applications where the 50 mW reduction does not impact thermal design margins.
MMBTA92LT3G (onsemi): Active equivalent in Tape & Reel packaging format. Maintains all electrical specifications of the original part with RoHS3 compliance.
MMBTA92-7-F (Diodes Incorporated): Cross-manufacturer equivalent from Diodes Incorporated with AEC-Q101 automotive qualification. Identical electrical specifications and RoHS3 compliance. Recommended for automotive and high-reliability applications.
SMMBTA92LT1G and SMMBTA92LT3G (onsemi): Automotive-grade variants with AEC-Q101 qualification. Suitable for applications requiring automotive-level reliability and traceability.

Functional Substitutes (Modified Electrical Specifications):

MMBT6520LT1G and NSVMMBT6520LT1G (onsemi): Higher breakdown voltage (350 V vs. 300 V) with increased transition frequency (200 MHz vs. 50 MHz). Reduced power dissipation (225 mW vs. 350 mW) and lower DC current gain (20 vs. 25). Suitable for high-frequency applications requiring enhanced voltage margin. The NSVMMBT6520LT1G variant includes AEC-Q101 qualification.
CMPTA92E TR PBFREE (Central Semiconductor Corp): Alternative manufacturer with 350 V breakdown voltage, 75 MHz transition frequency, and higher DC current gain (105 vs. 25). Maintains 350 mW power rating. Extended operating temperature range (-65°C to 150°C). Suitable for applications requiring enhanced gain characteristics and wider temperature operation.
FMMT597TA (Diodes Incorporated): Reduced collector current rating (200 mA vs. 500 mA) with higher power dissipation (500 mW vs. 350 mW) and increased transition frequency (75 MHz vs. 50 MHz). Higher DC current gain (100 vs. 25). Suitable for lower-current applications requiring higher frequency response and gain.
MSB92T1G (onsemi): Reduced collector current (150 mA vs. 500 mA) and power dissipation (150 mW vs. 350 mW). Maintains 300 V breakdown voltage and 50 MHz transition frequency. SC-59 package variant. Suitable for low-current signal-switching applications.

Frequently Asked Questions (FAQ)

Q: Can MMBTA92LT1G directly replace MMBTA92_D87Z in existing designs?

A: Yes. MMBTA92LT1G maintains identical electrical specifications (300 V breakdown, 500 mA collector current, 50 MHz transition frequency, 25 hFE minimum). The 50 mW reduction in power rating (300 mW vs. 350 mW) requires verification that thermal design margins remain adequate for the specific application. Both parts use SOT-23-3 packaging with identical pinout.

Q: What is the difference between MMBTA92LT1G and SMMBTA92LT1G?

A: Both parts are electrically identical with 300 V breakdown voltage, 500 mA collector current, and 50 MHz transition frequency. SMMBTA92LT1G includes AEC-Q101 automotive qualification and is designated for automotive-grade applications. Selection depends on application requirements for automotive compliance and traceability.

Q: Why would I select MMBT6520LT1G instead of MMBTA92LT1G?

A: MMBT6520LT1G provides higher breakdown voltage (350 V vs. 300 V) and significantly higher transition frequency (200 MHz vs. 50 MHz), making it suitable for high-frequency switching applications. The trade-off includes reduced power dissipation (225 mW vs. 300 mW) and lower DC current gain (20 vs. 25). Selection depends on whether the application requires enhanced voltage margin and frequency response.

Q: Are there packaging format differences between substitute parts?

A: Yes. Most onsemi parts are available in Cut Tape (CT) & Digi-Reel or Tape & Reel (TR) formats. The MMBTA92LT1G and MMBTA92LT3G are electrically identical but differ in packaging: LT1G uses Cut Tape & Digi-Reel format, while LT3G uses Tape & Reel format. MSB92T1G uses SC-59 package instead of SOT-23-3. Verify packaging compatibility with assembly equipment and procurement requirements.

Q: Can FMMT597TA be used in applications designed for MMBTA92_D87Z?

A: FMMT597TA is a functional substitute with reduced collector current rating (200 mA vs. 500 mA). It is suitable only for applications where the maximum collector current requirement does not exceed 200 mA. The part offers higher power dissipation (500 mW vs. 350 mW), higher transition frequency (75 MHz vs. 50 MHz), and significantly higher DC current gain (100 vs. 25). Verify that the reduced current rating and modified gain characteristics are compatible with circuit design requirements.

Q: What compliance certifications should I consider for new designs?

A: For general industrial applications, RoHS3 compliance is standard. For automotive applications, AEC-Q101 qualification is required. SMMBTA92LT1G, SMMBTA92LT3G, MMBTA92-7-F, NSVMMBT6520LT1G, and FMMT597TA all include AEC-Q101 qualification. MMBTA92LT1G and MMBTA92LT3G provide RoHS3 compliance without automotive qualification.

Q: Is the CMPTA92E TR PBFREE from Central Semiconductor Corp a suitable replacement?

A: CMPTA92E TR PBFREE is a functional substitute with higher breakdown voltage (350 V vs. 300 V), higher transition frequency (75 MHz vs. 50 MHz), and significantly higher DC current gain (105 vs. 25). It maintains 350 mW power dissipation and 500 mA collector current. The extended operating temperature range (-65°C to 150°C vs. -55°C to 150°C) provides additional margin. Suitability depends on whether the modified electrical characteristics and alternative manufacturer source are acceptable for the application.

Q: What is the significance of the DC current gain (hFE) differences between parts?

A: DC current gain determines the base current required to achieve a specified collector current. MMBTA92_D87Z and most direct equivalents specify hFE minimum of 25 at 30 mA collector current and 10 V Vce. CMPTA92E and FMMT597TA feature significantly higher gains (105 and 100 respectively), requiring less base current for the same collector current. This affects circuit biasing and base resistor selection. Higher gain parts may require circuit redesign to maintain proper operating point.

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