MMBTA55LT3 Equivalent & Substitute Parts

Part Overview

The MMBTA55LT3 is a PNP bipolar junction transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. This device operates at 60 V collector-emitter breakdown voltage with a maximum collector current of 500 mA and 225 mW power dissipation in a surface-mount SOT-23-3 package. The MMBTA55LT3 is classified as obsolete, necessitating identification of equivalent and substitute components for new designs and ongoing production requirements. Equivalent parts maintain identical electrical and mechanical specifications, while substitute parts provide functional alternatives within defined parameter tolerances.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Collector-Emitter Breakdown Voltage (Max)	60	V
Collector Current (Max)	500	mA
Power Dissipation (Max)	225	mW
Vce Saturation (Max)	250	mV @ 10mA, 100mA
DC Current Gain (hFE Min)	100	@ 100mA, 1V
Transition Frequency	50	MHz
Operating Temperature Range	-55 to 150	°C
Package Type	SOT-23-3 (TO-236)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the MMBTA55LT3 is determined by the following critical parameters: transistor type (PNP), collector-emitter breakdown voltage, maximum collector current, power dissipation capability, saturation voltage characteristics, DC current gain, transition frequency, and surface-mount package compatibility. Parts are grouped into two categories:

Parametric Equivalents maintain all electrical specifications and package form factor, differing only in product status and compliance certifications. These parts are direct replacements with no circuit redesign required.

Similar Substitutes share the same transistor type, package family, and mounting technology but may differ in one or more of the following: collector-emitter breakdown voltage (45 V versus 60 V), maximum collector current (100 mA or 600 mA versus 500 mA), power dissipation (250 mW, 300 mW, or 425 mW versus 225 mW), saturation voltage, DC current gain, or transition frequency (80 MHz, 100 MHz, 150 MHz, or 200 MHz versus 50 MHz). Similar substitutes require circuit analysis to confirm compatibility with application voltage and current requirements.

Parameter Comparison

Part Number	Manufacturer	Product Status	Vce(br) Max (V)	Ic Max (mA)	Power Max (mW)	Vce Sat (mV)	hFE Min	fT (MHz)	Package	RoHS Compliance
MMBTA55LT3	onsemi	Obsolete	60	500	225	250 @ 10mA, 100mA	100 @ 100mA, 1V	50	SOT-23-3	Non-compliant
MMBTA55LT1G	onsemi	Active	60	500	225	250 @ 10mA, 100mA	100 @ 100mA, 1V	50	SOT-23-3	RoHS3 Compliant
MMBTA55-7-F	Diodes Incorporated	Active	60	500	300	250 @ 10mA, 100mA	100 @ 100mA, 1V	50	SOT-23-3	RoHS3 Compliant
BC807-16 RFG	Taiwan Semiconductor Corporation	Active	45	500	300	700 @ 50mA, 500mA	100 @ 100mA, 1V	100	SOT-23	RoHS3 Compliant
BC807-25,215	Nexperia USA Inc.	Active	45	500	250	700 @ 50mA, 500mA	160 @ 100mA, 1V	80	TO-236AB	RoHS3 Compliant
BC807K-25R	Nexperia USA Inc.	Active	45	500	250	700 @ 50mA, 500mA	160 @ 100mA, 1V	80	TO-236AB	RoHS3 Compliant
BCW89,215	Nexperia USA Inc.	Active	60	100	250	150 @ 2.5mA, 50mA	120 @ 2mA, 5V	150	TO-236AB	RoHS3 Compliant
BCX17,215	Nexperia USA Inc.	Active	45	500	250	620 @ 50mA, 500mA	100 @ 100mA, 1V	80	TO-236AB	RoHS3 Compliant
BCX17,235	NXP USA Inc.	Active	45	500	250	620 @ 50mA, 500mA	100 @ 100mA, 1V	80	SOT-23	RoHS3 Compliant
BCX17T116	Rohm Semiconductor	Active	45	500	425	620 @ 50mA, 500mA	100 @ 100mA, 1V	200	SST3	RoHS3 Compliant
BSR16,215	Nexperia USA Inc.	Active	60	600	250	1.6 @ 50mA, 500mA	100 @ 150mA, 10V	200	TO-236AB	RoHS3 Compliant

Engineering Selection Recommendations

Direct Replacement (Parametric Equivalent):

MMBTA55LT1G from onsemi is the active-status equivalent of MMBTA55LT3. This part maintains identical electrical specifications across all critical parameters: 60 V collector-emitter breakdown voltage, 500 mA maximum collector current, 225 mW power dissipation, and 50 MHz transition frequency. The primary distinction is RoHS3 compliance and active product status. MMBTA55LT1G is suitable for direct substitution in new designs and production requiring compliance with current environmental regulations.

Manufacturer Alternatives (Same Electrical Specifications, Different Manufacturer):

MMBTA55-7-F from Diodes Incorporated provides equivalent electrical performance with increased power dissipation capability (300 mW versus 225 mW). This part maintains 60 V breakdown voltage and 500 mA collector current specifications. The higher power rating provides additional thermal margin in applications approaching the original device's power limits. MMBTA55-7-F carries AEC-Q101 automotive qualification and RoHS3 compliance.

Functional Substitutes (Reduced Voltage Rating):

BC807-16 RFG, BC807-25,215, BC807K-25R, BCX17,215, and BCX17,235 are suitable substitutes for applications where the 60 V collector-emitter breakdown voltage is not required. These parts operate at 45 V maximum breakdown voltage with 500 mA collector current capability. Selection among these variants depends on specific saturation voltage, current gain, and frequency requirements. All are RoHS3 compliant and carry automotive qualifications (AEC-Q101 or AEC-Q100).

Functional Substitutes (Reduced Current Rating):

BCW89,215 from Nexperia USA Inc. maintains the 60 V collector-emitter breakdown voltage but is rated for 100 mA maximum collector current. This part is suitable only for applications where collector current does not exceed 100 mA. The device offers higher transition frequency (150 MHz) and improved saturation voltage characteristics at lower current levels.

Functional Substitutes (Increased Current Rating):

BSR16,215 from Nexperia USA Inc. provides 60 V collector-emitter breakdown voltage with increased collector current capability (600 mA maximum). This part is suitable for applications requiring higher current handling than the original 500 mA specification. The device exhibits higher saturation voltage (1.6 V at specified conditions) and offers 200 MHz transition frequency.

High-Performance Substitute (Enhanced Frequency Response):

BCX17T116 from Rohm Semiconductor operates at 45 V collector-emitter breakdown voltage with 500 mA collector current and provides significantly enhanced transition frequency (200 MHz versus 50 MHz) and power dissipation (425 mW versus 225 mW). This part is suitable for applications requiring higher-speed switching performance within the 45 V voltage constraint.

Frequently Asked Questions (FAQ)

Q: Can MMBTA55LT1G be used as a direct replacement for MMBTA55LT3?

A: Yes. MMBTA55LT1G maintains identical electrical specifications and package form factor. The primary differences are active product status and RoHS3 compliance. No circuit modifications are required.

Q: What is the key difference between MMBTA55LT3 and MMBTA55-7-F?

A: Both parts share identical voltage (60 V), current (500 mA), and frequency (50 MHz) specifications. MMBTA55-7-F provides higher power dissipation (300 mW versus 225 mW), offering improved thermal performance. MMBTA55-7-F is manufactured by Diodes Incorporated and carries AEC-Q101 automotive qualification.

Q: Can BC807 series parts replace MMBTA55LT3 in all applications?

A: BC807 series parts (BC807-16 RFG, BC807-25,215, BC807K-25R) operate at 45 V maximum collector-emitter breakdown voltage, compared to 60 V for MMBTA55LT3. These parts are suitable only for applications where the circuit voltage does not exceed 45 V. Saturation voltage characteristics also differ significantly (700 mV versus 250 mV at specified conditions).

Q: What is the difference between BCX17,215 and BCX17,235?

A: BCX17,215 and BCX17,235 are functionally equivalent PNP transistors with identical electrical specifications. The primary difference is packaging: BCX17,215 is supplied in Cut Tape (CT) & Digi-Reel format by Nexperia USA Inc., while BCX17,235 is supplied in Bulk packaging by NXP USA Inc. Both maintain 45 V breakdown voltage, 500 mA collector current, and 80 MHz transition frequency.

Q: Is BCW89,215 suitable for high-current applications?

A: No. BCW89,215 is rated for maximum 100 mA collector current, making it unsuitable for applications requiring the 500 mA capability of MMBTA55LT3. This part is designed for low-signal applications where collector current remains below 100 mA.

Q: What advantage does BCX17T116 offer over other substitutes?

A: BCX17T116 provides the highest transition frequency (200 MHz) among available substitutes, along with the highest power dissipation capability (425 mW). These characteristics make it suitable for high-speed switching applications. However, it operates at 45 V maximum breakdown voltage, requiring circuit voltage verification.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed carry RoHS3 compliance. The original MMBTA55LT3 is RoHS non-compliant. MMBTA55LT1G provides the compliant equivalent with identical specifications.

Q: Can BSR16,215 be used in place of MMBTA55LT3?

A: BSR16,215 maintains the 60 V collector-emitter breakdown voltage and is suitable for applications requiring higher collector current (600 mA maximum). However, saturation voltage is significantly higher (1.6 V versus 250 mV), which may affect circuit performance in saturation-mode switching applications. Circuit analysis is required to confirm compatibility.

Q: What packaging options are available for MMBTA55 equivalents?

A: MMBTA55LT1G is available in Cut Tape (CT) & Digi-Reel packaging. MMBTA55-7-F is supplied in Tape & Reel (TR) format. All substitute parts maintain SOT-23-3 or equivalent surface-mount package families (TO-236AB, SST3), ensuring PCB footprint compatibility.

Q: Which substitute part is recommended for automotive applications?

A: MMBTA55-7-F from Diodes Incorporated carries AEC-Q101 automotive qualification. Among BC807 variants, BC807-25,215 and BC807K-25R carry AEC-Q101 and AEC-Q100 qualifications respectively. BCX17,215 and BCW89,215 also carry AEC-Q101 qualification. Selection depends on specific voltage and current requirements.

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