MMBTA42 Equivalent & Substitute Parts

Part Overview

The MMBTA42 is an NPN bipolar junction transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. The device features a 300 V collector-emitter breakdown voltage rating, 500 mA maximum collector current, and 50 MHz transition frequency in a surface mount SOT-23-3 package. The MMBTA42 is classified as obsolete, making equivalent and substitute parts necessary for new designs and ongoing production requirements. Active alternatives with identical or superior electrical characteristics are available from multiple manufacturers.

Substiute Parts

MMBTA42
onsemiIn Stock: 46201MMBTA42 Datasheet
MMBTA42
Current Part
MMBTA42LT1G
onsemiIn Stock: 205291MMBTA42LT1G Datasheet
MMBTA42LT1G
Direct
SMMBTA42LT1G
onsemiIn Stock: 155150SMMBTA42LT1G Datasheet
SMMBTA42LT1G
Direct
SMMBTA42LT3G
onsemiIn Stock: 17017SMMBTA42LT3G Datasheet
SMMBTA42LT3G
Direct
MMBTA42LT3G
onsemiIn Stock: 3431MMBTA42LT3G Datasheet
MMBTA42LT3G
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MSD42T1G
onsemiIn Stock: 6665MSD42T1G Datasheet
MSD42T1G
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MMBTA42-7-F
Diodes IncorporatedIn Stock: 17167MMBTA42-7-F Datasheet
MMBTA42-7-F
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CMPT6517 TR PBFREE
Central Semiconductor CorpIn Stock: 38122CMPT6517 TR PBFREE Datasheet
CMPT6517 TR PBFREE
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CMPTA42E TR PBFREE
Central Semiconductor CorpIn Stock: 27240CMPTA42E TR PBFREE Datasheet
CMPTA42E TR PBFREE
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DN350T05-7
Diodes IncorporatedIn Stock: 35409DN350T05-7 Datasheet
DN350T05-7
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FMMT497TA
Diodes IncorporatedIn Stock: 50132FMMT497TA Datasheet
FMMT497TA
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FMMT6517TA
Diodes IncorporatedIn Stock: 3720FMMT6517TA Datasheet
FMMT6517TA
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FMMTA42TA
Diodes IncorporatedIn Stock: 18436FMMTA42TA Datasheet
FMMTA42TA
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MMBTA42,215
Nexperia USA Inc.In Stock: 9979MMBTA42,215 Datasheet
MMBTA42,215
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MMBTA42-TP
Micro Commercial CoIn Stock: 4394MMBTA42-TP Datasheet
MMBTA42-TP
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MMBTA42_R1_00001
Panjit International Inc.In Stock: 6508MMBTA42_R1_00001 Datasheet
MMBTA42_R1_00001
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PMBTA42,185
Nexperia USA Inc.In Stock: 78761PMBTA42,185 Datasheet
PMBTA42,185
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PMBTA42,215
Nexperia USA Inc.In Stock: 3809PMBTA42,215 Datasheet
PMBTA42,215
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PMBTA42,235
Nexperia USA Inc.In Stock: 176235PMBTA42,235 Datasheet
PMBTA42,235
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SMBTA42E6327HTSA1
Infineon TechnologiesIn Stock: 23420SMBTA42E6327HTSA1 Datasheet
SMBTA42E6327HTSA1
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Key Parameters

Parameter Value Unit
Transistor Type NPN
Collector-Emitter Breakdown Voltage (Max) 300 V
Collector Current (Max) 500 mA
Power Dissipation (Max) 240 mW
Transition Frequency 50 MHz
Operating Temperature Range −55 to +150 °C
Package Type SOT-23-3
Mounting Type Surface Mount
DC Current Gain (hFE Min) 40 @ 30 mA, 10 V
Vce Saturation (Max) 500 mV @ 2 mA, 20 mA

Substitute Part Grouping Explanation

Substitute parts for the MMBTA42 are classified into two categories based on electrical parameter compatibility:

Direct Substitutes (Identical Electrical Specifications): Parts that maintain all critical electrical parameters including 300 V breakdown voltage, 500 mA collector current, 50 MHz transition frequency, and SOT-23-3 package form factor. These parts are interchangeable without circuit modification.

Similar Substitutes (Enhanced or Modified Specifications): Parts that exceed one or more key electrical parameters while maintaining the same package type and basic functionality. These parts operate within the same voltage and current envelope but may feature higher power dissipation, improved frequency response, or enhanced current gain characteristics.

Key Parameters Determining Substitution Eligibility:

  • Collector-Emitter Breakdown Voltage: 300 V minimum
  • Maximum Collector Current: 500 mA minimum
  • Package Type: SOT-23-3 (TO-236-3, SC-59)
  • Mounting Type: Surface Mount
  • Operating Temperature Range: −55°C to +150°C minimum

Parameter Comparison

Part Number Manufacturer Status Vce(BR) Max (V) Ic Max (mA) Power Max (mW) fT (MHz) hFE Min @ Ic, Vce Package
MMBTA42 onsemi Obsolete 300 500 240 50 40 @ 30 mA, 10 V SOT-23-3
MMBTA42LT1G onsemi Active 300 500 225 50 40 @ 30 mA, 10 V SOT-23-3
SMMBTA42LT1G onsemi Active 300 500 225 50 40 @ 30 mA, 10 V SOT-23-3
SMMBTA42LT3G onsemi Active 300 500 225 50 40 @ 30 mA, 10 V SOT-23-3
MMBTA42LT3G onsemi Active 300 500 225 50 40 @ 30 mA, 10 V SOT-23-3
MMBTA42-7-F Diodes Incorporated Active 300 500 300 50 40 @ 30 mA, 10 V SOT-23-3
MSD42T1G onsemi Active 300 150 150 40 @ 30 mA, 10 V SC-59
CMPTA42E TR PBFREE Central Semiconductor Corp Active 350 500 350 75 50 @ 30 mA, 10 V SOT-23
DN350T05-7 Diodes Incorporated Active 350 500 300 50 20 @ 50 mA, 10 V SOT-23-3
FMMT497TA Diodes Incorporated Active 300 500 500 75 80 @ 100 mA, 10 V SOT-23-3
CMPT6517 TR PBFREE Central Semiconductor Corp Active 350 500 350 200 20 @ 50 mA, 10 V SOT-23

Engineering Selection Recommendations

Primary Direct Substitutes (Recommended for Pin-Compatible Replacement):

The onsemi MMBTA42LT1G, SMMBTA42LT1G, SMMBTA42LT3G, and MMBTA42LT3G are direct electrical equivalents to the obsolete MMBTA42. All four parts maintain identical voltage, current, and frequency specifications while offering active product status. MMBTA42LT1G and MMBTA42LT3G are available in Cut Tape packaging, while SMMBTA42LT1G and SMMBTA42LT3G are available in Tape & Reel format. SMMBTA42LT1G carries AEC-Q101 automotive qualification, suitable for applications requiring automotive-grade reliability. All onsemi alternatives are RoHS3 compliant.

Secondary Direct Substitute (Alternative Manufacturer):

The Diodes Incorporated MMBTA42-7-F provides identical electrical specifications with enhanced power dissipation capability (300 mW versus 240 mW). This part is suitable for applications requiring additional thermal margin while maintaining full pin and functional compatibility. RoHS3 compliant.

Enhanced Performance Alternatives (Higher Voltage or Current Capability):

The Diodes Incorporated DN350T05-7 offers 350 V breakdown voltage with 300 mW power dissipation, providing enhanced voltage margin for high-voltage switching applications. The part maintains 500 mA collector current and 50 MHz transition frequency in SOT-23-3 package.

The Diodes Incorporated FMMT497TA provides 500 mW power dissipation with 75 MHz transition frequency and 80 hFE minimum gain, suitable for applications requiring higher power handling or improved frequency response while maintaining 300 V breakdown voltage and 500 mA collector current.

Limited Current Alternative:

The onsemi MSD42T1G is rated for 150 mA maximum collector current with 150 mW power dissipation. This part is suitable only for applications where collector current does not exceed 150 mA and is not recommended as a general substitute for the full 500 mA rated MMBTA42.

Compliance Considerations:

All recommended substitutes maintain REACH Unaffected status and RoHS3 compliance. Moisture sensitivity level remains MSL 1 (Unlimited) across all alternatives, eliminating special handling requirements.

Frequently Asked Questions (FAQ)

Q: Can MMBTA42LT1G directly replace MMBTA42 in existing designs?

A: Yes. MMBTA42LT1G maintains identical electrical specifications including 300 V breakdown voltage, 500 mA collector current, 50 MHz transition frequency, and SOT-23-3 package. Pin configuration and functional behavior are identical. The part is available in active production status with higher inventory availability than the obsolete MMBTA42.

Q: What is the difference between MMBTA42LT1G and SMMBTA42LT1G?

A: Both parts are electrically identical with 300 V breakdown voltage, 500 mA collector current, and 50 MHz transition frequency. SMMBTA42LT1G carries AEC-Q101 automotive qualification and is suitable for automotive applications requiring enhanced reliability screening. MMBTA42LT1G is the standard industrial-grade equivalent. Packaging options differ: MMBTA42LT1G is available in Cut Tape & Digi-Reel, while SMMBTA42LT1G is available in Cut Tape & Digi-Reel and Tape & Reel formats.

Q: Why does MMBTA42-7-F have higher power dissipation (300 mW) than the original MMBTA42 (240 mW)?

A: MMBTA42-7-F is manufactured by Diodes Incorporated and features enhanced thermal design allowing 300 mW power dissipation while maintaining identical voltage and current ratings. This provides additional thermal margin for applications operating near maximum power limits. The higher power rating does not affect circuit compatibility; existing designs operate within the lower 240 mW envelope.

Q: Is MSD42T1G a suitable substitute for MMBTA42?

A: MSD42T1G is not recommended as a general substitute. While it maintains 300 V breakdown voltage and identical package type, the maximum collector current is limited to 150 mA compared to 500 mA for MMBTA42. Use MSD42T1G only in applications where collector current does not exceed 150 mA.

Q: Can I use DN350T05-7 or CMPTA42E TR PBFREE as substitutes?

A: DN350T05-7 and CMPTA42E TR PBFREE are compatible alternatives with enhanced voltage ratings (350 V versus 300 V). These parts are suitable for applications where higher voltage margin is beneficial. Both maintain 500 mA collector current and SOT-23-3 package compatibility. DN350T05-7 maintains 50 MHz transition frequency identical to MMBTA42, while CMPTA42E TR PBFREE offers 75 MHz. These parts are not pin-for-pin equivalents in terms of electrical characteristics but are functionally compatible in circuits designed for 300 V operation.

Q: What packaging options are available for MMBTA42 substitutes?

A: onsemi alternatives are available in Cut Tape (CT) & Digi-Reel and Tape & Reel (TR) formats. Diodes Incorporated MMBTA42-7-F is available in Cut Tape & Digi-Reel format. Central Semiconductor Corp parts are available in Tape & Reel format. Select packaging based on production volume and assembly requirements. All parts maintain identical SOT-23-3 surface mount package form factor.

Q: Are all substitutes RoHS3 compliant?

A: Yes. All recommended substitute parts carry RoHS3 compliance certification. The obsolete MMBTA42 is REACH Unaffected; all active substitutes maintain REACH Unaffected status. Moisture sensitivity level is MSL 1 (Unlimited) for all parts, eliminating special moisture control requirements during storage and handling.

Q: Which substitute offers the best thermal performance?

A: FMMT497TA provides the highest power dissipation rating at 500 mW, offering superior thermal performance for applications requiring maximum power handling capability. MMBTA42-7-F offers 300 mW, providing moderate thermal improvement over the original 240 mW rating. Both parts maintain 300 V breakdown voltage and 500 mA collector current.

Q: Can I use FMMT497TA for high-frequency applications?

A: FMMT497TA features 75 MHz transition frequency compared to 50 MHz for MMBTA42, making it suitable for applications requiring improved frequency response. The part maintains identical voltage and current ratings while providing enhanced speed performance and higher current gain (80 hFE minimum versus 40 hFE minimum).

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