MMBTA13_D87Z Equivalent & Substitute Parts

Part Overview

The MMBTA13_D87Z is an NPN Darlington bipolar junction transistor manufactured by onsemi, designed for surface mount applications in the SOT-23-3 package. This component operates at a maximum collector current of 1.2 A and collector-emitter breakdown voltage of 30 V, with a maximum power dissipation of 350 mW. The part is classified as obsolete, necessitating identification of active equivalent and substitute components that maintain functional compatibility within specified electrical and mechanical parameters.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN - Darlington	—
Current - Collector (Ic) (Max)	1.2	A
Voltage - Collector Emitter Breakdown (Max)	30	V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 100µA, 100mA	—
DC Current Gain (hFE) (Min) @ Ic, Vce	10000 @ 100mA, 5V	—
Power - Max	350	mW
Frequency - Transition	125	MHz
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	TO-236-3, SC-59, SOT-23-3	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the MMBTA13_D87Z is determined by the following critical parameters:

Mandatory Compatibility Criteria:

Transistor Type: NPN - Darlington configuration
Package / Case: TO-236-3, SC-59, SOT-23-3 (physical and electrical compatibility)
Voltage - Collector Emitter Breakdown (Max): 30 V minimum
Vce Saturation: 1.5V @ 100µA, 100mA
Operating Temperature Range: -55°C to 150°C (TJ)
Mounting Type: Surface Mount

Current Rating Consideration: The MMBTA13_D87Z specifies a maximum collector current of 1.2 A. Substitute parts with lower maximum collector current ratings (300 mA) are classified as functional substitutes for applications where the full 1.2 A capability is not required. Substitute parts with equal or higher current ratings provide direct replacement capability.

Electrical Performance Parameters:

DC Current Gain (hFE): Minimum 10000 @ 100mA, 5V (or higher)
Frequency - Transition: 125 MHz minimum
Power - Max: 350 mW or higher

Substitute parts are grouped into two categories:

Category A - Lower Current Substitutes (300 mA rated): MMBTA13LT1G, MMBTA13LT3G, MMBTA14LT1G, SMMBTA13LT1G, 2SD1383KT146B, 2SD2142KT146, MMBTA13-7-F, MMBTA13-TP, MMBTA14-7-F. These parts maintain voltage, saturation, and gain specifications but operate at reduced maximum collector current. Selection is appropriate for circuits designed for 300 mA or lower current operation.

Category B - Higher Current Substitutes (500 mA rated): PMBTA13,215. This part provides increased current capability while maintaining all other critical parameters.

Parameter Comparison

Part Number	Manufacturer	Ic (Max)	Vce(br)max	Vce Sat @ Ib, Ic	hFE (Min) @ Ic, Vce	Power (Max)	Freq (Transition)	Temp Range	Package	Product Status
MMBTA13_D87Z	onsemi	1.2 A	30 V	1.5V @ 100µA, 100mA	10000 @ 100mA, 5V	350 mW	125 MHz	-55 to 150°C	SOT-23-3	Obsolete
MMBTA13LT1G	onsemi	300 mA	30 V	1.5V @ 100µA, 100mA	10000 @ 100mA, 5V	225 mW	125 MHz	-55 to 150°C	SOT-23-3	Active
MMBTA13LT3G	onsemi	300 mA	30 V	1.5V @ 100µA, 100mA	10000 @ 100mA, 5V	225 mW	125 MHz	-55 to 150°C	SOT-23-3	Active
MMBTA14LT1G	onsemi	300 mA	30 V	1.5V @ 100µA, 100mA	20000 @ 100mA, 5V	225 mW	125 MHz	-55 to 150°C	SOT-23-3	Active
SMMBTA13LT1G	onsemi	300 mA	30 V	1.5V @ 100µA, 100mA	10000 @ 100mA, 5V	225 mW	125 MHz	-55 to 150°C	SOT-23-3	Active
2SD1383KT146B	Rohm Semiconductor	300 mA	32 V	1.5V @ 400µA, 200mA	5000 @ 100mA, 5V	200 mW	250 MHz	-55 to 150°C	SOT-23-3	Active
2SD2142KT146	Rohm Semiconductor	300 mA	30 V	1.5V @ 100µA, 100mA	10000 @ 100mA, 5V	200 mW	200 MHz	-55 to 150°C	SOT-23-3	Active
MMBTA13-7-F	Diodes Incorporated	300 mA	30 V	1.5V @ 100µA, 100mA	10000 @ 100mA, 5V	300 mW	125 MHz	-55 to 150°C	SOT-23-3	Active
MMBTA13-TP	Micro Commercial Co	300 mA	30 V	1.5V @ 100µA, 100mA	10000 @ 150mA, 1V	225 mW	125 MHz	-55 to 150°C	SOT-23-3	Active
MMBTA14-7-F	Diodes Incorporated	300 mA	30 V	1.5V @ 100µA, 100mA	20000 @ 100mA, 5V	300 mW	125 MHz	-55 to 150°C	SOT-23-3	Active
PMBTA13,215	Nexperia USA Inc.	500 mA	30 V	1.5V @ 100µA, 100mA	10000 @ 100mA, 5V	250 mW	125 MHz	-55 to 150°C	TO-236AB	Active

Engineering Selection Recommendations

Primary Selection Criteria:

All substitute parts listed are active products with RoHS3 compliance and REACH unaffected status, providing long-term availability and regulatory compliance advantages over the obsolete MMBTA13_D87Z.

For Applications Requiring Maximum Current Capability (≥500 mA): PMBTA13,215 (Nexperia USA Inc.) is the only substitute providing current rating at or above the original 1.2 A specification. This part maintains all critical electrical parameters including 30 V breakdown voltage, 1.5V saturation voltage, and 10000 hFE minimum gain. The part carries AEC-Q101 automotive qualification.

For Applications Operating at 300 mA or Below: Multiple substitutes are available from onsemi, Diodes Incorporated, Micro Commercial Co, and Rohm Semiconductor. Selection among these options is determined by specific application requirements:

onsemi MMBTA13LT1G, MMBTA13LT3G, SMMBTA13LT1G: Direct electrical equivalents with identical gain specifications (10000 hFE minimum). Differ only in packaging format (Cut Tape & Digi-Reel, Tape & Reel). Highest inventory availability (30,728 to 152,200 units).
onsemi MMBTA14LT1G: Identical electrical specifications to MMBTA13 variants except for higher DC current gain (20000 hFE minimum @ 100mA, 5V). Suitable where enhanced gain is beneficial.
Diodes Incorporated MMBTA13-7-F and MMBTA14-7-F: Carry AEC-Q101 automotive qualification. MMBTA13-7-F provides 300 mW power rating (higher than onsemi variants at 225 mW). MMBTA14-7-F offers 20000 hFE minimum gain with automotive qualification.
Micro Commercial Co MMBTA13-TP: Active product with standard specifications. hFE measured at different conditions (150mA, 1V) compared to other variants.
Rohm Semiconductor 2SD2142KT146: Maintains 30 V breakdown voltage and 10000 hFE gain. Operates at 200 MHz transition frequency (lower than onsemi 125 MHz variants) and 200 mW power rating.
Rohm Semiconductor 2SD1383KT146B: Provides 32 V breakdown voltage (exceeds 30 V requirement). Transition frequency of 250 MHz exceeds original specification. DC current gain minimum of 5000 hFE is lower than original 10000 specification. Suitable for applications where higher voltage margin and frequency performance are advantageous.

Compliance and Availability: All substitute parts are RoHS3 compliant and REACH unaffected. Inventory levels range from 1,937 to 152,200 units, providing supply security for production requirements.

Frequently Asked Questions (FAQ)

Q: Can MMBTA13_D87Z be directly replaced with a 300 mA rated substitute?

A: Direct replacement is possible only if the application circuit operates at collector currents of 300 mA or below. The MMBTA13_D87Z is rated for 1.2 A maximum collector current. Substitutes with 300 mA ratings will not support applications requiring higher current levels. Circuit analysis must confirm that peak and continuous collector current demands do not exceed 300 mA.

Q: What is the difference between MMBTA13LT1G and MMBTA13LT3G?

A: Both parts are electrically identical NPN Darlington transistors with identical electrical specifications. The difference is packaging format: MMBTA13LT1G is supplied in Cut Tape (CT) & Digi-Reel format, while MMBTA13LT3G is supplied in Tape & Reel (TR) format. Selection depends on assembly equipment compatibility and procurement requirements.

Q: Why do MMBTA14 variants have higher DC current gain (20000 hFE) than MMBTA13 variants (10000 hFE)?

A: MMBTA14 and MMBTA13 are distinct part numbers with different internal designs. The MMBTA14 series is engineered for higher current gain performance. Both are functionally compatible substitutes for the MMBTA13_D87Z in applications where the higher gain does not create circuit instability or undesired performance changes.

Q: Is the Rohm Semiconductor 2SD1383KT146B suitable as a substitute?

A: The 2SD1383KT146B is electrically compatible for applications operating at 300 mA or below. It provides a higher breakdown voltage (32 V versus 30 V) and higher transition frequency (250 MHz versus 125 MHz). However, the DC current gain minimum is 5000 hFE, which is lower than the original 10000 hFE specification. This part is suitable where the lower gain does not negatively impact circuit performance.

Q: What is the advantage of PMBTA13,215 over other substitutes?

A: PMBTA13,215 is the only substitute providing a maximum collector current rating of 500 mA, which approaches the original 1.2 A capability. This part is suitable for applications requiring higher current handling than the 300 mA alternatives. It maintains all other critical electrical parameters and carries AEC-Q101 automotive qualification.

Q: Are all substitute parts RoHS3 compliant?

A: Yes, all substitute parts listed are RoHS3 compliant and REACH unaffected, providing regulatory compliance for both new designs and legacy system updates.

Q: Can MMBTA13-7-F and MMBTA14-7-F be used interchangeably?

A: Both parts are electrically compatible and carry AEC-Q101 automotive qualification. The primary difference is DC current gain: MMBTA13-7-F provides 10000 hFE minimum, while MMBTA14-7-F provides 20000 hFE minimum. Interchangeability depends on whether the circuit design accommodates the higher gain of the MMBTA14-7-F variant.

Q: What packaging considerations apply when substituting the MMBTA13_D87Z?

A: The MMBTA13_D87Z uses SOT-23-3 package. All listed substitutes use compatible packages: SOT-23-3, TO-236-3, SC-59, or TO-236AB. These packages are physically and electrically interchangeable on standard PCB layouts. Verify that the specific supplier device package designation matches assembly equipment specifications.

Q: Why is the MMBTA13_D87Z classified as obsolete?

A: The MMBTA13_D87Z is an older onsemi product that has been superseded by active variants such as MMBTA13LT1G and MMBTA13LT3G. Active substitutes provide equivalent or superior performance with guaranteed long-term availability and manufacturing support.

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