Equivalent & Substitute Parts for MMBTA06LT1HTSA1 Bipolar (BJT) Transistor

Part Overview

Manufacturer Part Number MMBTA06LT1HTSA1 from Infineon Technologies is a surface mount NPN Bipolar (BJT) transistor in the SOT-23-3 PG-SOT23 package. It offers a maximum collector-emitter voltage of 80 V, a maximum collector current of 500 mA, a transition frequency of 100 MHz, and power dissipation up to 330 mW. The device is ROHS3 compliant, features a maximum operating junction temperature of 150°C, and has a last time buy status. For ongoing design and production, identifying substitute and equivalent models is essential due to the lifecycle status, to ensure supply continuity and compliance with required certifications.

Key Parameters

Parameter	Value
Manufacturer Part Number	MMBTA06LT1HTSA1
Manufacturer	Infineon Technologies
Category	Transistors, Bipolar (BJT)
Transistor Type	NPN
Collector-Emitter Voltage (Vce)	80 V
Collector Current (Ic, Max)	500 mA
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA
Collector Cutoff Current (Ices)	100nA
DC Current Gain (hFE, Min) @ Ic, Vce	100 @ 100mA, 1V
Transition Frequency (ft)	100MHz
Power Dissipation (Ptot, Max)	330 mW
Operating Temperature (Tj, Max)	150°C
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	PG-SOT23
RoHS Status	ROHS3 Compliant
REACH Status	REACH Unaffected
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Part Status	Last Time Buy

Substitute Part Grouping Explanation

Substitute and equivalent models are identified strictly based on key electrical and mechanical parameters: transistor type (NPN), maximum collector-emitter voltage (80 V), collector current rating (500 mA), Vce saturation, cutoff current, minimum DC current gain, transition frequency, power dissipation, maximum junction temperature, package/case compatibility, supplier device package, and compliance status. Only parts matching these listed parameters within the provided substitute data are considered valid alternatives for MMBTA06LT1HTSA1 in the Transistors, Bipolar (BJT) category.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Transistor Type	Collector-Emitter Voltage (Vce)	Collector Current (Ic, Max)	Vce Saturation (Max) @ Ib, Ic	Collector Cutoff Current (Ices)	DC Current Gain (hFE, Min) @ Ic, Vce	Transition Frequency (ft)	Power Dissipation (Ptot, Max)	Operating Temp (Tj, Max)	Package / Case	Supplier Device Package	RoHS	MSL
MMBTA06LT1HTSA1	Infineon Technologies	NPN	80 V	500 mA	250mV @ 10mA, 100mA	100nA	100 @ 100mA, 1V	100MHz	330 mW	150°C	TO-236-3, SC-59, SOT-23-3	PG-SOT23	ROHS3	1
MMBTA06LT1G	onsemi	NPN	80 V	500 mA	250mV @ 10mA, 100mA	100nA	100 @ 100mA, 1V	100MHz	225 mW	150°C	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)	ROHS3	1
MMBTA06LT3G	onsemi	NPN	80 V	500 mA	250mV @ 10mA, 100mA	100nA	100 @ 100mA, 1V	100MHz	225 mW	150°C	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)	ROHS3	1
SMMBTA06LT1G	onsemi	NPN	80 V	500 mA	250mV @ 10mA, 100mA	100nA	100 @ 100mA, 1V	100MHz	225 mW	150°C	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)	ROHS3	1
MMBTA06-7-F	Diodes Incorporated	NPN	80 V	500 mA	250mV @ 10mA, 100mA	100nA	100 @ 100mA, 1V	100MHz	300 mW	150°C	TO-236-3, SC-59, SOT-23-3	SOT-23-3	ROHS3	1
MMBTA06-TP	Micro Commercial Co	NPN	80 V	500 mA	250mV @ 10mA, 100mA	100nA	100 @ 100mA, 1V	100MHz	300 mW	150°C	TO-236-3, SC-59, SOT-23-3	SOT-23	ROHS3	1
MMBTA06Q-7-F	Diodes Incorporated	NPN	80 V	500 mA	250mV @ 10mA, 100mA	100nA	100 @ 100mA, 1V	100MHz	350 mW	150°C	TO-236-3, SC-59, SOT-23-3	SOT-23-3	ROHS3	1
PMBTA06,215	Nexperia USA Inc.	NPN	80 V	500 mA	250mV @ 10mA, 100mA	50nA	100 @ 100mA, 1V	100MHz	250 mW	150°C	TO-236-3, SC-59, SOT-23-3	TO-236AB	ROHS3	1
PMBTA06,235	Nexperia USA Inc.	NPN	80 V	500 mA	250mV @ 10mA, 100mA	50nA	100 @ 100mA, 1V	100MHz	250 mW	150°C	TO-236-3, SC-59, SOT-23-3	TO-236AB	ROHS3	1

Engineering Selection Recommendations

Select substitute transistors based on the alignment of electrical and mechanical parameters documented above. Transistors that match Vce, Ic, Vce(sat), hFE, transition frequency, package/case, and compliance requirements are suitable alternatives. All listed substitutes are active, ROHS3 compliant, REACH unaffected, and possess unlimited moisture sensitivity level (MSL 1). Automotive qualification and grade parameters are indicated for models with AEC-Q101 qualification, where applicable.

Frequently Asked Questions (FAQ)

Q1: What criteria are used for substituting MMBTA06LT1HTSA1?
A1: Only transistors with NPN type, matching collector-emitter voltage (80V), collector current (500mA), Vce saturation, DC gain, transition frequency, package/case form factor, and compliance status as listed above are accepted.

Q2: Are power ratings important for substitution?
A2: Substitute parts are considered suitable if their maximum power dissipation meets or exceeds application requirements within the documented parameters. Provided power ratings for equivalents range from 225 mW to 350 mW.

Q3: Can substitutions vary in packaging?
A3: Packaging is limited to TO-236-3, SC-59, SOT-23-3 and direct package equivalents (PG-SOT23, SOT-23-3, TO-236AB), ensuring package compatibility for surface mount usage.

Q4: What compliance and environmental standards must substitutes meet?
A4: Substitute transistors are required to be ROHS3 compliant, REACH unaffected, and MSL 1 (Unlimited), as specified.

Q5: Is automotive grade qualification relevant?
A5: Where application requires, substitutes such as MMBTA06Q-7-F and PMBTA06,215 offer automotive (AEC-Q101) qualification. The grade is verified via the provided parameters.

Q6: What should engineers verify before selection?
A6: All selection criteria are provided above. Only parameters explicitly listed in the tables form the basis for allowed substitution. No further verification steps outside the documented specifications are permitted in this context.

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