MMBT7002K N-Channel MOSFET 60V 300mA Equivalent & Substitute Parts

Part Overview

The MMBT7002K is an N-Channel MOSFET manufactured by Diotec Semiconductor, rated for 60V drain-to-source voltage with 300mA continuous drain current. The device is housed in a SOT-23-3 surface mount package and is designed for general-purpose switching applications requiring compact form factors. The product maintains Active status in the component market. Substitute parts are identified to address inventory availability, extended lead times, or specific application requirements while maintaining electrical and mechanical compatibility within defined parameter tolerances.

Substiute Parts

MMBT7002K
Diotec SemiconductorIn Stock: 3291MMBT7002K Datasheet
MMBT7002K
Current Part
2N7002H6327XTSA2
Infineon TechnologiesIn Stock: 3036052N7002H6327XTSA2 Datasheet
2N7002H6327XTSA2
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Key Parameters

Parameter Value Unit
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Continuous Drain Current (Id) @ 25°C 300 mA
Rds On (Max) @ 500mA, 10V 3 Ohm
Gate Threshold Voltage (Vgs(th)) @ 250µA 2.5 V
Gate Voltage (Vgs) Max ±20 V
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-3 (TO-236, SC-59)

Substitute Part Grouping Explanation

Substitution of the MMBT7002K is determined by strict equivalence across the following critical parameters:

Electrical Equivalence Criteria:

  • FET Type: N-Channel topology
  • Drain-to-Source Voltage (Vdss): 60V minimum rating
  • Continuous Drain Current (Id): 300mA minimum at 25°C
  • On-State Resistance (Rds On): 3 Ohm maximum at specified conditions
  • Gate Threshold Voltage (Vgs(th)): 2.5V maximum at 250µA
  • Maximum Gate Voltage (Vgs): ±20V minimum range
  • Operating Temperature Range: -55°C to 150°C minimum

Mechanical Equivalence Criteria:

  • Package Type: SOT-23-3 (TO-236 / SC-59) surface mount configuration
  • Mounting Type: Surface mount technology

Substitute parts must satisfy all electrical parameters at or above the specified ratings and maintain identical package geometry to ensure direct board-level compatibility without layout modifications.

Parameter Comparison

Parameter MMBT7002K (Diotec) 2N7002H6327XTSA2 (Infineon) Unit
Manufacturer Diotec Semiconductor Infineon Technologies
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 60 V
Continuous Drain Current (Id) @ 25°C 300 300 mA
Rds On (Max) @ 500mA, 10V 3 3 Ohm
Gate Threshold Voltage (Vgs(th)) @ 250µA 2.5 2.5 V
Gate Voltage (Vgs) Max ±20 ±20 V
Input Capacitance (Ciss) @ 25V 50 20 pF
Power Dissipation (Max) 350 500 mW
Operating Temperature Range -55 to 150 -55 to 150 °C (TJ)
Package / Case SOT-23-3 SOT-23-3
Product Status Active Active

Engineering Selection Recommendations

MMBT7002K (Diotec Semiconductor): Primary selection for applications where Diotec component qualification is specified or preferred. Product status is Active with 3,200 units in stock. RoHS compliance status is not applicable per manufacturer specification.

2N7002H6327XTSA2 (Infineon Technologies): Direct electrical and mechanical substitute. Infineon OptiMOS™ series device provides superior power dissipation capability (500mW versus 350mW) and lower input capacitance (20pF versus 50pF), resulting in improved thermal performance and faster switching characteristics. Product status is Active with 303,526 units in stock. ROHS3 Compliant with REACH Unaffected status. Moisture Sensitivity Level (MSL) rating of 1 (Unlimited) provides extended shelf life and handling flexibility compared to the main part.

Selection between these devices is determined by inventory availability, manufacturer qualification requirements, and thermal design margins. Both devices satisfy identical electrical and mechanical substitution criteria for SOT-23-3 surface mount N-Channel MOSFET applications rated at 60V / 300mA.

Frequently Asked Questions (FAQ)

Q: Can the 2N7002H6327XTSA2 directly replace the MMBT7002K on existing PCB assemblies?

A: Yes. Both devices are housed in identical SOT-23-3 (TO-236 / SC-59) packages with matching pin configurations. No PCB layout modifications are required for direct substitution.

Q: What are the key electrical differences between these two devices?

A: The primary electrical differences are input capacitance (Ciss) and power dissipation rating. The 2N7002H6327XTSA2 features lower input capacitance (20pF versus 50pF) and higher power dissipation capability (500mW versus 350mW). All critical switching parameters—Vdss, Id, Rds On, Vgs(th), and Vgs—are identical.

Q: Are there compliance or certification differences between these parts?

A: Yes. The 2N7002H6327XTSA2 carries ROHS3 Compliance and REACH Unaffected status. The MMBT7002K RoHS status is listed as Not Applicable. The 2N7002H6327XTSA2 also carries MSL rating of 1 (Unlimited), providing extended storage and handling flexibility.

Q: Which device should be selected for thermal-constrained applications?

A: The 2N7002H6327XTSA2 is suitable for applications where thermal performance is critical, as it provides 500mW power dissipation capability compared to 350mW for the MMBT7002K. Lower input capacitance also enables faster switching transitions, reducing switching losses.

Q: Are both devices suitable for -55°C to 150°C operating temperature range?

A: Yes. Both the MMBT7002K and 2N7002H6327XTSA2 are rated for identical operating temperature ranges of -55°C to 150°C (TJ).

Q: What is the significance of the lower input capacitance in the 2N7002H6327XTSA2?

A: Lower input capacitance (Ciss) reduces gate charge requirements and enables faster switching transitions. This characteristic is beneficial in high-frequency switching applications and reduces driver power consumption.

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