MMBT5770 Equivalent & Substitute Parts

Part Overview

The MMBT5770 is an RF transistor NPN type manufactured by onsemi, rated for 15V collector-emitter breakdown voltage with a transition frequency of 600MHz and maximum power dissipation of 225mW in a surface mount SOT-23-3 package. The part is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design requirements and procurement needs. Active alternatives with comparable or enhanced electrical characteristics are available from multiple manufacturers.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	-
Voltage - Collector Emitter Breakdown (Max)	15	V
Frequency - Transition	600	MHz
Power - Max	225	mW
Current - Collector (Ic) (Max)	10	mA
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 3mA, 1V	-
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	-
Package / Case	TO-236-3, SC-59, SOT-23-3	-
Moisture Sensitivity Level (MSL)	1 (Unlimited)	-

Substitute Part Grouping Explanation

Substitution of the MMBT5770 is determined by the following critical parameters:

Primary Compatibility Criteria:

Transistor Type: NPN (required match)
Voltage - Collector Emitter Breakdown (Max): 15V minimum
Frequency - Transition: 600MHz minimum
Power - Max: 225mW minimum
Mounting Type: Surface Mount (required match)
Package / Case: SOT-23-3 compatible footprint (required match)
Operating Temperature Range: -55°C to 150°C (required match)

Substitution Categories:

Direct Equivalent (Same Electrical Class): Parts meeting all primary criteria with identical or superior ratings within the same functional envelope.

Functional Upgrade: Parts exceeding primary specifications (higher frequency, higher current capacity, or higher power rating) while maintaining package compatibility and voltage rating.

Partial Compatibility: Parts with different package types or mounting configurations that require board redesign consideration.

Parameter Comparison

Parameter	MMBT5770	MMBT918LT1G	BFR35APE6327HTSA1	2SC4915-Y,LF	BF570,215	MRF327
Manufacturer	onsemi	onsemi	Infineon Technologies	Toshiba Semiconductor and Storage	NXP Semiconductors	MACOM Technology Solutions
Transistor Type	NPN	NPN	NPN	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	15V	15V	15V	30V	15V	33V
Frequency - Transition	600MHz	600MHz	5GHz	550MHz	490MHz	-
Power - Max	225mW	225mW	280mW	100mW	250mW	80W
Current - Collector (Ic) (Max)	10mA	50mA	45mA	20mA	100mA	9A
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 3mA, 1V	20 @ 3mA, 1V	70 @ 15mA, 8V	100 @ 1mA, 6V	40 @ 10mA, 1V	20 @ 4A, 5V
Operating Temperature Range	-55 to 150°C	-55 to 150°C	150°C (TJ)	125°C (TJ)	150°C (TJ)	-
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Chassis Mount
Package / Case	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	SC-75, SOT-416	TO-236-3, SC-59, SOT-23-3	316-01
Product Status	Obsolete	Active	Active	Active	Active	Active
RoHS Status	-	ROHS3 Compliant	ROHS3 Compliant	RoHS Compliant	-	ROHS3 Compliant

Engineering Selection Recommendations

MMBT918LT1G (onsemi): Direct equivalent with identical voltage and frequency ratings. Maintains SOT-23-3 package compatibility and operating temperature range. Offers higher maximum collector current (50mA vs. 10mA) and active product status. ROHS3 compliant. Recommended as primary replacement for direct substitution in existing designs.

BFR35APE6327HTSA1 (Infineon Technologies): Functional upgrade with enhanced frequency capability (5GHz vs. 600MHz) and higher power rating (280mW vs. 225mW). Maintains 15V voltage rating and SOT-23-3 package compatibility. Higher DC current gain (70 vs. 30). ROHS3 compliant and active status. Suitable for designs requiring improved RF performance within the same package footprint.

BF570,215 (NXP Semiconductors): Compatible with SOT-23-3 package and 15V voltage rating. Offers higher maximum collector current (100mA vs. 10mA) and power rating (250mW vs. 225mW). Slightly lower transition frequency (490MHz vs. 600MHz). AEC-Q101 automotive qualified. Active product status. Suitable for applications requiring higher current capacity.

2SC4915-Y,LF (Toshiba Semiconductor and Storage): Higher voltage rating (30V vs. 15V) with lower frequency (550MHz vs. 600MHz) and power rating (100mW vs. 225mW). Different package type (SC-75, SOT-416) requires board redesign. Lower maximum collector current (20mA vs. 10mA). Not recommended for direct substitution due to package incompatibility.

MRF327 (MACOM Technology Solutions): Significantly different application class. Chassis mount configuration with 80W power rating and 9A collector current. Voltage rating 33V. Not suitable for surface mount SOT-23-3 applications. Requires complete board redesign.

Frequently Asked Questions (FAQ)

Q: Can MMBT918LT1G directly replace MMBT5770 without circuit modification?

A: Yes. MMBT918LT1G maintains identical voltage (15V), frequency (600MHz), power (225mW), and package (SOT-23-3) specifications. The higher collector current rating (50mA vs. 10mA) does not require circuit changes and provides design margin. Both parts operate across -55°C to 150°C temperature range.

Q: What is the primary advantage of BFR35APE6327HTSA1 over MMBT918LT1G?

A: BFR35APE6327HTSA1 provides enhanced RF performance with 5GHz transition frequency compared to 600MHz, higher power dissipation capability (280mW vs. 225mW), and superior DC current gain (70 vs. 20). Both maintain SOT-23-3 package compatibility and 15V voltage rating. Selection depends on application frequency requirements.

Q: Why is 2SC4915-Y,LF not recommended as a direct substitute?

A: 2SC4915-Y,LF uses SC-75 (SOT-416) package instead of SOT-23-3, requiring PCB footprint redesign. Additionally, it has lower transition frequency (550MHz vs. 600MHz), lower power rating (100mW vs. 225mW), and lower maximum collector current (20mA vs. 10mA). These factors make it unsuitable for direct substitution.

Q: Is BF570,215 suitable for high-frequency RF applications?

A: BF570,215 has transition frequency of 490MHz, which is below the MMBT5770 specification of 600MHz. While it maintains SOT-23-3 package compatibility and 15V voltage rating, it is better suited for applications requiring higher collector current (100mA) rather than high-frequency RF performance.

Q: What compliance certifications should be verified for new designs?

A: MMBT918LT1G, BFR35APE6327HTSA1, and MRF327 are ROHS3 compliant. BF570,215 is RoHS compliant and AEC-Q101 automotive qualified. All parts have MSL rating of 1 (Unlimited) and REACH unaffected status. Verify specific compliance requirements for your application before final selection.

Q: Can MRF327 be used in place of MMBT5770?

A: No. MRF327 is a chassis mount device rated for 80W power dissipation and 9A collector current, designed for high-power RF applications. It is not compatible with surface mount SOT-23-3 footprints and requires completely different circuit design and board layout.

Q: What is the inventory status of substitute parts?

A: MMBT918LT1G has 60,200 pieces in stock (highest availability). BF570,215 has 56,166 pieces. BFR35APE6327HTSA1 has 3,706 pieces. 2SC4915-Y,LF has 816 pieces. MRF327 has 1,344 pieces. MMBT5770 has 692 pieces remaining as obsolete stock.

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