MMBT5089 Equivalent & Substitute Parts

Part Overview

The MMBT5089 is an NPN bipolar junction transistor manufactured by onsemi, housed in a SOT-23-3 surface mount package. This device is rated for 25 V collector-emitter breakdown voltage with a maximum collector current of 100 mA and 350 mW power dissipation. The MMBT5089 is classified as obsolete, necessitating identification of functionally equivalent substitute components for new designs and ongoing production requirements. Active alternatives with matching or superior electrical characteristics are available from multiple manufacturers.

Substiute Parts

MMBT5089
onsemiIn Stock: 30329MMBT5089 Datasheet
MMBT5089
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MMBT3906LT1G
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MMBT5089LT1G
onsemiIn Stock: 35446MMBT5089LT1G Datasheet
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MMBT6429LT1G
onsemiIn Stock: 155261MMBT6429LT1G Datasheet
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MMBT6521LT1G
onsemiIn Stock: 4419MMBT6521LT1G Datasheet
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SMMBT5089LT1G
onsemiIn Stock: 9280SMMBT5089LT1G Datasheet
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SMMBT6521LT1G
onsemiIn Stock: 4133SMMBT6521LT1G Datasheet
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BC848C_R1_00001
Panjit International Inc.In Stock: 80273BC848C_R1_00001 Datasheet
BC848C_R1_00001
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CMPT5089 TR PBFREE
Central Semiconductor CorpIn Stock: 25847CMPT5089 TR PBFREE Datasheet
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SMBT3904E6327HTSA1
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Key Parameters

Parameter Value Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 25 V
Current - Collector (Ic) (Max) 100 mA
Power - Max 350 mW
Frequency - Transition 50 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 400 @ 100µA, 5V
Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA
Operating Temperature Range -55 to 150 °C
Package / Case SOT-23-3 (TO-236-3, SC-59)
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the MMBT5089 is determined by the following critical parameters:

Transistor Type: All substitutes must be NPN configuration to maintain circuit polarity and biasing relationships.

Voltage Rating: Collector-emitter breakdown voltage must equal or exceed 25 V. Substitutes with higher voltage ratings (30 V, 40 V, 45 V) are acceptable as they provide additional design margin.

Current Rating: Maximum collector current must equal or exceed 100 mA. Substitutes rated for 50 mA are acceptable only in applications where current demand does not exceed this lower threshold.

Power Dissipation: Maximum power rating must equal or exceed 350 mW. Substitutes with lower power ratings (225 mW, 300 mW) are acceptable only when thermal conditions permit.

Package Compatibility: All substitutes must use SOT-23-3 (TO-236-3, SC-59) surface mount package to ensure PCB footprint compatibility.

Operating Temperature: All substitutes must support the -55°C to 150°C operating range or equivalent.

Compliance: All substitutes must maintain ROHS3 compliance and equivalent environmental certifications.

Substitutes are grouped into three categories: direct electrical equivalents (matching all primary parameters), current-limited alternatives (50 mA maximum), and enhanced-performance variants (higher voltage or frequency ratings).

Parameter Comparison

Part Number Manufacturer Transistor Type Vce Breakdown (Max) Ic (Max) Power (Max) Frequency hFE (Min) Package Status
MMBT5089 onsemi NPN 25 V 100 mA 350 mW 50 MHz 400 @ 100µA, 5V SOT-23-3 Obsolete
MMBT5089LT1G onsemi NPN 25 V 50 mA 300 mW 50 MHz 400 @ 100µA, 5V SOT-23-3 Active
MMBT6521LT1G onsemi NPN 25 V 100 mA 225 mW 300 @ 2mA, 10V SOT-23-3 Active
SMMBT5089LT1G onsemi NPN 25 V 50 mA 300 mW 50 MHz 400 @ 100µA, 5V SOT-23-3 Active
SMMBT6521LT1G onsemi NPN 25 V 100 mA 225 mW 300 @ 2mA, 10V SOT-23-3 Active
MMBT6429LT1G onsemi NPN 45 V 200 mA 225 mW 700 MHz 500 @ 100µA, 5V SOT-23-3 Active
BC848C_R1_00001 Panjit International Inc. NPN 30 V 100 mA 330 mW 420 @ 2mA, 5V SOT-23-3 Active
CMPT5089 TR PBFREE Central Semiconductor Corp NPN 25 V 50 mA 350 mW 50 MHz 400 @ 100µA, 5V SOT-23-3 Active
SMBT3904E6327HTSA1 Infineon Technologies NPN 40 V 200 mA 330 mW 300 MHz 100 @ 10mA, 1V SOT-23-3 Last Time Buy

Engineering Selection Recommendations

Direct Electrical Equivalents (100 mA, 25 V Rating):

MMBT6521LT1G and SMMBT6521LT1G are active onsemi alternatives matching the 100 mA collector current and 25 V voltage rating of the MMBT5089. Both devices are ROHS3 compliant with identical operating temperature ranges. These parts are suitable for direct substitution in applications where the full 100 mA current capacity is required. The primary difference is packaging format: MMBT6521LT1G is supplied in Cut Tape & Digi-Reel format, while SMMBT6521LT1G is supplied in Tape & Reel format. Power dissipation is reduced to 225 mW, which is acceptable for most applications but requires thermal verification in high-power scenarios.

Alternative Manufacturer Equivalent:

BC848C_R1_00001 from Panjit International Inc. provides 100 mA collector current with a 30 V voltage rating, exceeding the MMBT5089 specification. This device is ROHS3 compliant and active in production. The higher voltage rating provides additional design margin for transient protection. Power dissipation is 330 mW, slightly below the original 350 mW specification.

Current-Limited Alternatives (50 mA Rating):

MMBT5089LT1G, SMMBT5089LT1G, and CMPT5089 TR PBFREE are suitable only for applications where collector current does not exceed 50 mA. MMBT5089LT1G and SMMBT5089LT1G are onsemi products with identical electrical characteristics to the original MMBT5089 except for the reduced current rating. CMPT5089 TR PBFREE from Central Semiconductor Corp matches the original 350 mW power rating and 50 MHz frequency specification. All three are ROHS3 compliant and active in production.

Enhanced-Performance Alternatives:

MMBT6429LT1G and SMBT3904E6327HTSA1 offer higher voltage and current ratings (45 V / 200 mA and 40 V / 200 mA respectively) with improved frequency performance. These devices are suitable for applications requiring higher performance margins. MMBT6429LT1G is active; SMBT3904E6327HTSA1 is Last Time Buy status.

Compliance and Availability:

All recommended substitutes maintain ROHS3 compliance, MSL Level 1 (unlimited moisture sensitivity), and REACH unaffected status. Inventory availability varies; onsemi MMBT6521LT1G and SMMBT6521LT1G offer the most direct functional equivalence with active production status.

Frequently Asked Questions (FAQ)

Q: Can MMBT5089LT1G be used as a direct replacement for MMBT5089?

A: MMBT5089LT1G is electrically compatible but has a reduced maximum collector current rating of 50 mA versus the original 100 mA. It is suitable only for applications where circuit current demand does not exceed 50 mA. Verify circuit current requirements before substitution.

Q: What is the difference between MMBT6521LT1G and SMMBT6521LT1G?

A: Both devices are electrically identical NPN transistors with 100 mA collector current and 25 V voltage rating. The primary difference is packaging format: MMBT6521LT1G is supplied in Cut Tape & Digi-Reel format, while SMMBT6521LT1G is supplied in Tape & Reel format. Select based on assembly equipment compatibility and procurement requirements.

Q: Is BC848C_R1_00001 from Panjit a suitable replacement?

A: Yes. BC848C_R1_00001 provides 100 mA collector current with a 30 V voltage rating, exceeding the MMBT5089 specification. It is ROHS3 compliant and active in production. The higher voltage rating provides additional design margin. Verify DC current gain (hFE) requirements, as this device specifies 420 @ 2mA, 5V versus 400 @ 100µA, 5V for the original.

Q: Can I use MMBT6429LT1G in place of MMBT5089?

A: MMBT6429LT1G is electrically compatible with enhanced specifications: 45 V voltage rating, 200 mA collector current, and 700 MHz frequency. It is suitable for applications requiring higher performance margins. However, the reduced power rating (225 mW versus 350 mW) requires thermal verification in high-power applications.

Q: Are all substitute parts in the same SOT-23-3 package?

A: Yes. All substitute parts listed use SOT-23-3 (TO-236-3, SC-59) surface mount package, ensuring PCB footprint compatibility with the original MMBT5089.

Q: What is the difference between CMPT5089 and MMBT5089LT1G?

A: Both are 50 mA, 25 V NPN transistors in SOT-23-3 package. CMPT5089 is manufactured by Central Semiconductor Corp and maintains the original 350 mW power rating with -65°C to 150°C operating range. MMBT5089LT1G is manufactured by onsemi with 300 mW power rating and -55°C to 150°C operating range. Select based on thermal requirements and manufacturer preference.

Q: Is SMBT3904E6327HTSA1 still available?

A: SMBT3904E6327HTSA1 is classified as Last Time Buy status, indicating limited availability. While currently in inventory, this device should not be selected for new designs. Use MMBT6429LT1G or SMMBT6521LT1G for active production alternatives.

Q: Do all substitutes maintain ROHS3 compliance?

A: Yes. All substitute parts listed are ROHS3 compliant with MSL Level 1 (unlimited moisture sensitivity) and REACH unaffected status, matching the environmental certifications of the original MMBT5089.

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