MMBT5088 Equivalent & Substitute Parts

Part Overview

The MMBT5088 is a surface-mount NPN bipolar junction transistor manufactured by onsemi, housed in a SOT-23-3 package. This device is rated for 30 V collector-emitter breakdown voltage, 100 mA maximum collector current, and 350 mW power dissipation. The part is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility within the specified parameter ranges while offering active product status and continued availability.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	30	V
Current - Collector (Ic) (Max)	100	mA
Power - Max	350	mW
Frequency - Transition	50	MHz
Operating Temperature Range	-55 to 150	°C
Package / Case	SOT-23-3	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the MMBT5088 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Transistor Type: NPN (mandatory match)
Package / Case: SOT-23-3 (mandatory match for mechanical compatibility)
Voltage - Collector Emitter Breakdown: minimum 30 V (equal or higher acceptable)
Current - Collector (Ic) (Max): minimum 100 mA (equal or higher acceptable)
Operating Temperature Range: -55°C to 150°C (mandatory match)
Mounting Type: Surface Mount (mandatory match)

Secondary Compatibility Parameters:

Power dissipation rating (300 mW or higher acceptable)
Frequency - Transition (50 MHz or higher acceptable)
Vce Saturation characteristics
DC Current Gain (hFE) variations acceptable within application tolerance

Substitute parts are grouped into two categories based on voltage rating alignment:

Category 1: 30 V Rated Devices — BC848 series (BC848ALT1G, BC848BLT1G, BC848BLT3G, BC848CLT1G) and BC849 series (BC849BLT1G, BC849CLT1G) provide direct electrical substitution with enhanced frequency performance (100 MHz vs. 50 MHz) and active product status.

Category 2: Higher Voltage Rated Devices — BCW32LT1G and BCW33LT1G (32 V rated) and MMBT3416LT3G (40 V rated) provide substitution for applications requiring higher voltage margins, with trade-offs in power dissipation or frequency response.

Category 3: Current-Limited Variant — MMBT5088LT1G maintains identical electrical specifications but with reduced maximum collector current (50 mA vs. 100 mA), suitable only for applications with lower current requirements.

Parameter Comparison

Part Number	Manufacturer	Product Status	Ic (Max) mA	Vce(br) V	Power mW	Freq MHz	hFE @ 2mA, 5V	Package	Inventory Pcs
MMBT5088	onsemi	Obsolete	100	30	350	50	300 @ 100µA, 5V	SOT-23-3	57800
BC848ALT1G	onsemi	Active	100	30	300	100	110	SOT-23-3	42400
BC848BLT1G	onsemi	Active	100	30	300	100	200	SOT-23-3	17300
BC848BLT3G	onsemi	Active	100	30	300	100	200	SOT-23-3	9760
BC848CLT1G	onsemi	Active	100	30	300	100	420	SOT-23-3	6200
BC849BLT1G	onsemi	Active	100	30	300	100	200	SOT-23-3	1122
BC849CLT1G	onsemi	Active	100	30	300	100	420	SOT-23-3	33100
BCW32LT1G	onsemi	Active	100	32	225	—	200	SOT-23-3	21473
BCW33LT1G	onsemi	Active	100	32	300	—	420	SOT-23-3	3400
MMBT3416LT3G	onsemi	Active	100	40	225	—	75	SOT-23-3	8200
MMBT5088LT1G	onsemi	Active	50	30	300	50	300 @ 100µA, 5V	SOT-23-3	17400

Engineering Selection Recommendations

Direct Substitution (Recommended for Most Applications):

BC848BLT1G and BC849CLT1G are the primary recommended substitutes for MMBT5088 replacement. Both devices are active products with ROHS3 compliance and REACH unaffected status, matching the original part's environmental certifications. These parts maintain the 30 V collector-emitter breakdown voltage and 100 mA maximum collector current specifications. The enhanced transition frequency (100 MHz vs. 50 MHz) provides improved performance margin in high-frequency applications. BC849CLT1G offers higher DC current gain (420 vs. 300), beneficial for applications requiring lower base drive current.

Alternative Substitution (Higher Voltage Margin):

BCW33LT1G provides a 32 V rated alternative with 300 mW power dissipation and 420 hFE gain. This device is suitable for applications where additional voltage headroom is required. BCW32LT1G offers the same voltage rating with reduced power dissipation (225 mW) and lower gain (200 hFE), appropriate for lower-power circuit implementations.

Higher Voltage Applications:

MMBT3416LT3G extends the voltage rating to 40 V with 225 mW power dissipation. This device is suitable only for applications where the higher voltage capability is required, as it exhibits lower DC current gain (75 hFE) compared to the original specification.

Current-Limited Applications:

MMBT5088LT1G maintains identical electrical characteristics to the original part but with reduced maximum collector current (50 mA). This variant is suitable only for applications with inherently lower current requirements and does not serve as a general replacement.

Packaging Considerations:

BC848BLT3G and BC849BLT1G are supplied in Tape & Reel (TR) packaging, while BC848BLT1G and BC848CLT1G are available in Cut Tape (CT) & Digi-Reel® format. Selection between packaging options depends on production volume and assembly equipment compatibility.

Frequently Asked Questions (FAQ)

Q: Can BC848BLT1G directly replace MMBT5088 in existing designs?

A: Yes. BC848BLT1G maintains electrical compatibility across all critical parameters: 30 V collector-emitter breakdown voltage, 100 mA maximum collector current, SOT-23-3 package, and -55°C to 150°C operating temperature range. The enhanced transition frequency (100 MHz vs. 50 MHz) and identical power dissipation rating (300 mW) ensure functional equivalence. Both parts are ROHS3 compliant and REACH unaffected.

Q: What is the difference between BC848 and BC849 series substitutes?

A: BC848 and BC849 series are electrically equivalent in voltage, current, and package specifications. The primary distinction is DC current gain (hFE): BC848ALT1G provides 110 hFE, BC848BLT1G and BC848BLT3G provide 200 hFE, and BC848CLT1G provides 420 hFE. BC849BLT1G provides 200 hFE, and BC849CLT1G provides 420 hFE. Selection depends on base drive current requirements in the application circuit.

Q: Are BCW32LT1G and BCW33LT1G suitable substitutes?

A: BCW32LT1G and BCW33LT1G are acceptable substitutes for applications where 32 V collector-emitter breakdown voltage is acceptable. These devices maintain 100 mA maximum collector current and SOT-23-3 packaging. BCW32LT1G provides 225 mW power dissipation with 200 hFE gain, while BCW33LT1G provides 300 mW power dissipation with 420 hFE gain. Applications requiring exactly 30 V rating should use BC848 or BC849 series instead.

Q: Why is MMBT3416LT3G not recommended as a primary substitute?

A: MMBT3416LT3G exhibits significantly lower DC current gain (75 hFE) compared to MMBT5088 (300 hFE). While the 40 V collector-emitter breakdown voltage provides higher voltage margin, the reduced gain requires circuit redesign to maintain proper base drive conditions. This device is suitable only for applications specifically requiring 40 V voltage rating.

Q: What is the significance of the hFE parameter in substitution?

A: DC current gain (hFE) determines the base current required to achieve a specified collector current. Higher hFE values (BC848CLT1G and BC849CLT1G at 420) require less base drive current than lower values (BC848ALT1G at 110). Applications with fixed base resistor values may require circuit adjustment if substituting between devices with significantly different hFE specifications.

Q: Can MMBT5088LT1G replace MMBT5088 in all applications?

A: No. MMBT5088LT1G is rated for maximum 50 mA collector current, compared to 100 mA for MMBT5088. This device is suitable only for applications with inherent current requirements below 50 mA. Applications requiring full 100 mA capability must use BC848 or BC849 series substitutes.

Q: What packaging options are available for substitute parts?

A: Substitute parts are available in two packaging formats: Cut Tape (CT) & Digi-Reel® for lower-volume applications (BC848ALT1G, BC848BLT1G, BC848CLT1G) and Tape & Reel (TR) for higher-volume production (BC848BLT3G, BC849BLT1G, BC849CLT1G, BCW32LT1G, BCW33LT1G, MMBT3416LT3G, MMBT5088LT1G). Selection depends on production volume and assembly equipment specifications.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All listed substitute parts are ROHS3 compliant and REACH unaffected, matching the environmental compliance status of the original MMBT5088 device.

Q: What is the transition frequency significance in substitution?

A: Transition frequency (fT) indicates the frequency at which current gain drops to unity. MMBT5088 is rated at 50 MHz, while BC848 and BC849 series are rated at 100 MHz. Higher transition frequency provides improved performance margin in high-frequency applications. BCW32LT1G, BCW33LT1G, and MMBT3416LT3G do not specify transition frequency and are suitable for lower-frequency applications.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message